CN102007572B - 晶圆处理沉积屏蔽构件 - Google Patents

晶圆处理沉积屏蔽构件 Download PDF

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Publication number
CN102007572B
CN102007572B CN2009801135361A CN200980113536A CN102007572B CN 102007572 B CN102007572 B CN 102007572B CN 2009801135361 A CN2009801135361 A CN 2009801135361A CN 200980113536 A CN200980113536 A CN 200980113536A CN 102007572 B CN102007572 B CN 102007572B
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China
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inches
cylindric
deposition
chamber
substrate support
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Chinese (zh)
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CN102007572A (zh
Inventor
马丁·李·瑞勒
基斯·A·米勒
阿纳恩萨·K·苏布尔曼尼
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2009801135361A 2008-04-16 2009-04-14 晶圆处理沉积屏蔽构件 Active CN102007572B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4555608P 2008-04-16 2008-04-16
US61/045,556 2008-04-16
US4933408P 2008-04-30 2008-04-30
US61/049,334 2008-04-30
PCT/US2009/040487 WO2009154853A2 (en) 2008-04-16 2009-04-14 Wafer processing deposition shielding components

Publications (2)

Publication Number Publication Date
CN102007572A CN102007572A (zh) 2011-04-06
CN102007572B true CN102007572B (zh) 2013-01-16

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CN2009801135361A Active CN102007572B (zh) 2008-04-16 2009-04-14 晶圆处理沉积屏蔽构件

Country Status (6)

Country Link
US (3) US20090260982A1 (enExample)
JP (1) JP5916384B2 (enExample)
KR (6) KR20150136142A (enExample)
CN (1) CN102007572B (enExample)
TW (1) TWI502670B (enExample)
WO (1) WO2009154853A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11952653B2 (en) 2020-01-22 2024-04-09 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering reaction chamber and process assembly of sputtering reaction chamber

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9062379B2 (en) * 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
KR101511027B1 (ko) * 2008-05-02 2015-04-10 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ물리 기상 증착용 프로세스 키트
US8900471B2 (en) 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
CN102576664A (zh) * 2009-08-11 2012-07-11 应用材料公司 用于rf物理气相沉积的处理套件
KR200482327Y1 (ko) 2010-01-29 2017-01-11 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트
US9834840B2 (en) * 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
CN103069542A (zh) * 2010-08-20 2013-04-24 应用材料公司 延长寿命的沉积环
KR101585883B1 (ko) 2010-10-29 2016-01-15 어플라이드 머티어리얼스, 인코포레이티드 물리적 기상 증착 챔버를 위한 증착 링 및 정전 척
EP2487275B1 (en) * 2011-02-11 2016-06-15 SPTS Technologies Limited Composite shielding
GB201102447D0 (en) * 2011-02-11 2011-03-30 Spp Process Technology Systems Uk Ltd Composite shielding
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
CN103781935B (zh) * 2011-08-25 2017-07-11 应用材料公司 用以沉积层于基板上的遮罩结构、设备及方法
JP5860063B2 (ja) * 2011-12-22 2016-02-16 キヤノンアネルバ株式会社 基板処理装置
TWM431893U (en) * 2012-02-10 2012-06-21 Well Thin Technology Ltd Deposition ring
US9376752B2 (en) * 2012-04-06 2016-06-28 Applied Materials, Inc. Edge ring for a deposition chamber
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
CN104584192B (zh) * 2012-08-30 2018-03-30 应用材料公司 反射沉积环和包括反射沉积环的基板处理室
CN103911585A (zh) * 2013-01-08 2014-07-09 旭晖应用材料股份有限公司 遮罩
KR102072044B1 (ko) * 2013-09-26 2020-01-31 주성엔지니어링(주) 기판 처리 장치
WO2015138094A1 (en) * 2014-03-12 2015-09-17 Applied Materials, Inc. Wafer rotation in a semiconductor chamber
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US20150354054A1 (en) * 2014-06-06 2015-12-10 Applied Materials, Inc. Cooled process tool adapter for use in substrate processing chambers
US10283334B2 (en) 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
CN105624634B (zh) * 2014-11-04 2018-05-08 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US20180265968A1 (en) * 2015-01-19 2018-09-20 Oerlikon Surface Solutions Ag, Pfaeffikon Coating chamber for implementing of a vacuum-assisted coating process, heat shield, and coating process
US10903055B2 (en) 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
US10755902B2 (en) 2015-05-27 2020-08-25 Tokyo Electron Limited Plasma processing apparatus and focus ring
CN107636211B (zh) * 2015-05-27 2021-07-09 应用材料公司 用于高生长速率外延腔室的热屏蔽环
SG10202108705SA (en) * 2015-07-03 2021-09-29 Applied Materials Inc Process kit having tall deposition ring and deposition ring clamp
US10103012B2 (en) 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
WO2017074633A1 (en) 2015-10-27 2017-05-04 Applied Materials, Inc. Biasable flux optimizer/collimator for pvd sputter chamber
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
WO2017131927A1 (en) 2016-01-26 2017-08-03 Applied Materials, Inc. Wafer edge ring lifting solution
JP6688385B2 (ja) * 2016-07-06 2020-04-28 株式会社アルバック 成膜装置、プラテンリング
US10446420B2 (en) 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
EP3526810B1 (en) * 2016-10-14 2021-11-10 Evatec AG Sputtering source
US10923385B2 (en) * 2016-11-03 2021-02-16 Lam Research Corporation Carrier plate for use in plasma processing systems
US10697057B2 (en) * 2016-11-18 2020-06-30 Applied Materials, Inc. Collimator for use in a physical vapor deposition chamber
JP7117300B2 (ja) * 2016-11-19 2022-08-12 アプライド マテリアルズ インコーポレイテッド 浮遊シャドウリングを有するプロセスキット
US10886113B2 (en) * 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
US11043364B2 (en) * 2017-06-05 2021-06-22 Applied Materials, Inc. Process kit for multi-cathode processing chamber
CN107227448B (zh) * 2017-06-30 2023-10-13 北京北方华创微电子装备有限公司 基座以及物理气相沉积装置
CN118248616A (zh) 2017-07-24 2024-06-25 朗姆研究公司 可移动的边缘环设计
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
TWI722257B (zh) * 2017-11-21 2021-03-21 美商蘭姆研究公司 底部和中間邊緣環
TWI760111B (zh) * 2017-11-21 2022-04-01 美商蘭姆研究公司 底部和中間邊緣環
KR102182298B1 (ko) * 2017-11-21 2020-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
JP7404268B2 (ja) * 2018-04-18 2023-12-25 アプライド マテリアルズ インコーポレイテッド 自己センタリング特徴を有するツーピースシャッタディスクアセンブリ
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
KR102067820B1 (ko) * 2018-07-24 2020-01-17 (주)선익시스템 가변형 아크억제수단이 마련된 증착장비
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
CN110838429B (zh) * 2018-08-15 2022-07-22 北京北方华创微电子装备有限公司 腔体内衬、等离子体反应腔室和等离子体设备
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US11551965B2 (en) 2018-12-07 2023-01-10 Applied Materials, Inc. Apparatus to reduce polymers deposition
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
EP3900009A1 (en) * 2018-12-19 2021-10-27 Evatec AG Vacuum system and method to deposit a compound layer
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
JP7329940B2 (ja) * 2019-03-22 2023-08-21 株式会社アルバック 成膜装置及びその製造方法。
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
CN110066981B (zh) * 2019-06-17 2023-11-28 浙江晶驰光电科技有限公司 正装基片定位装置及基片装载方法
CN110273134B (zh) * 2019-07-25 2024-06-21 深圳清华大学研究院 全口径薄膜沉积夹具
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
JP7376693B2 (ja) 2019-09-09 2023-11-08 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
KR102776948B1 (ko) * 2019-11-20 2025-03-05 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법 및 전자 디바이스 제조 방법
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
WO2021223953A1 (en) * 2020-05-06 2021-11-11 Asml Netherlands B.V. Contamination shield for mechanically insulating device
US11581166B2 (en) * 2020-07-31 2023-02-14 Applied Materials, Inc. Low profile deposition ring for enhanced life
US11670493B2 (en) * 2020-11-13 2023-06-06 Applied Materials, Inc. Isolator ring clamp and physical vapor deposition chamber incorporating same
USD1038049S1 (en) 2020-11-18 2024-08-06 Applied Materials, Inc. Cover ring for use in semiconductor processing chamber
US11996315B2 (en) * 2020-11-18 2024-05-28 Applied Materials, Inc. Thin substrate handling via edge clamping
US12100579B2 (en) * 2020-11-18 2024-09-24 Applied Materials, Inc. Deposition ring for thin substrate handling via edge clamping
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN114763602B (zh) * 2021-01-13 2023-09-29 台湾积体电路制造股份有限公司 晶圆处理设备与制造半导体装置的方法
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN115110042B (zh) * 2021-03-22 2024-03-01 台湾积体电路制造股份有限公司 物理气相沉积反应室及其使用方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11581167B2 (en) * 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
CN114672780B (zh) * 2022-03-22 2023-09-19 颀中科技（苏州）有限公司 晶圆托盘及晶圆片溅渡设备
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
CN120924919A (zh) 2022-07-08 2025-11-11 东曹Smd有限公司 溅射靶材和隔离环
US20240021417A1 (en) * 2022-07-15 2024-01-18 Samsung Electronics Co., Ltd. Focus ring, substrate processing apparatus including the same, and semiconductor fabrication method using the same
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same
KR102847491B1 (ko) * 2023-02-06 2025-08-20 주식회사 트리버스시스템 전자 소멸 방지 쉴드를 구비한 반도체 프로세스 챔버
KR102649810B1 (ko) * 2023-08-30 2024-03-21 주식회사 코미코 증착 공정용 챔버의 코팅방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US20020090464A1 (en) * 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US20050199491A1 (en) * 2001-11-14 2005-09-15 Tza-Jing Gung Shields usable with an inductively coupled plasma reactor

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784162B2 (ja) 1988-07-25 1995-09-13 東海興業株式会社 ウェザーストリップ、及びその成形方法
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
US5632873A (en) 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
JP3545123B2 (ja) * 1996-01-26 2004-07-21 アプライド マテリアルズ インコーポレイテッド ウエハ加熱器用成膜防護具
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
US5942042A (en) 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6034863A (en) * 1997-11-12 2000-03-07 Applied Materials, Inc. Apparatus for retaining a workpiece in a process chamber within a semiconductor wafer processing system
JP2002529594A (ja) * 1998-10-29 2002-09-10 アプライド マテリアルズ インコーポレイテッド 半導体ウエハ処理システムにおいて加工物を貫通して電力を結合する装置
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
JP2001140054A (ja) 1999-11-15 2001-05-22 Nec Kagoshima Ltd 真空成膜装置のクリーニング方法及び真空成膜装置
KR100342395B1 (ko) * 2000-06-28 2002-07-02 황인길 반도체 소자 제조 장치
US6699375B1 (en) * 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US6899798B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6730174B2 (en) * 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US7026009B2 (en) 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6797131B2 (en) * 2002-11-12 2004-09-28 Applied Materials, Inc. Design of hardware features to facilitate arc-spray coating applications and functions
KR20050069452A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 스퍼터링 장치의 실드구조
US20060054090A1 (en) 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
KR20070045060A (ko) * 2005-10-26 2007-05-02 삼성전자주식회사 증착 링 및 이를 세정하는 방법
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JP4954542B2 (ja) 2005-12-09 2012-06-20 三菱マテリアル株式会社 掘削ロッド、掘削ビット及び掘削工具
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US20020090464A1 (en) * 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US20050199491A1 (en) * 2001-11-14 2005-09-15 Tza-Jing Gung Shields usable with an inductively coupled plasma reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11952653B2 (en) 2020-01-22 2024-04-09 Beijing Naura Microelectronics Equipment Co., Ltd. Sputtering reaction chamber and process assembly of sputtering reaction chamber

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