SG10202108705SA - Process kit having tall deposition ring and deposition ring clamp - Google Patents

Process kit having tall deposition ring and deposition ring clamp

Info

Publication number
SG10202108705SA
SG10202108705SA SG10202108705SA SG10202108705SA SG10202108705SA SG 10202108705S A SG10202108705S A SG 10202108705SA SG 10202108705S A SG10202108705S A SG 10202108705SA SG 10202108705S A SG10202108705S A SG 10202108705SA SG 10202108705S A SG10202108705S A SG 10202108705SA
Authority
SG
Singapore
Prior art keywords
deposition ring
tall
process kit
clamp
deposition
Prior art date
Application number
SG10202108705SA
Inventor
William Johanson
Kirankumar Savandaiah
Adolph Miller Allen
Xin Wang
Prashant Prabhu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10202108705SA publication Critical patent/SG10202108705SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Clamps And Clips (AREA)
SG10202108705SA 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp SG10202108705SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN2029DE2015 2015-07-03
US15/201,019 US9909206B2 (en) 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp

Publications (1)

Publication Number Publication Date
SG10202108705SA true SG10202108705SA (en) 2021-09-29

Family

ID=57683629

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202108705SA SG10202108705SA (en) 2015-07-03 2016-07-01 Process kit having tall deposition ring and deposition ring clamp

Country Status (7)

Country Link
US (1) US9909206B2 (en)
JP (2) JP6976925B2 (en)
KR (1) KR20180016628A (en)
CN (3) CN109321890A (en)
SG (1) SG10202108705SA (en)
TW (2) TWI770678B (en)
WO (1) WO2017007729A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653885B (en) * 2017-03-03 2019-03-11 宏碁股份有限公司 Image output method and image capturing device
KR20200033912A (en) * 2017-09-15 2020-03-30 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device
US11056325B2 (en) * 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
CN110468377B (en) * 2018-05-11 2022-04-22 北京北方华创微电子装备有限公司 Cavity and semiconductor processing equipment
WO2020115962A1 (en) * 2018-12-03 2020-06-11 株式会社アルバック Film forming apparatus and film forming method
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
USD888903S1 (en) 2018-12-17 2020-06-30 Applied Materials, Inc. Deposition ring for physical vapor deposition chamber
CN111235535B (en) * 2020-01-22 2021-11-16 北京北方华创微电子装备有限公司 Process assembly of sputtering reaction chamber and sputtering reaction chamber thereof
US11935728B2 (en) * 2020-01-31 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing a semiconductor device
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
US11339466B2 (en) 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11380575B2 (en) 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
JP7223738B2 (en) 2020-11-12 2023-02-16 株式会社アルバック Sputtering equipment
US11581167B2 (en) 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
WO2024074202A1 (en) * 2022-10-05 2024-04-11 Applied Materials, Inc. Mask for a substrate, substrate support, substrate processing apparatus, method for layer deposition on a substrate and method of manufacturing one or more devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
SG177902A1 (en) * 2006-12-19 2012-02-28 Applied Materials Inc Non-contact process kit
KR20150136142A (en) 2008-04-16 2015-12-04 어플라이드 머티어리얼스, 인코포레이티드 Wafer processing deposition shielding components
US9799497B2 (en) * 2013-08-16 2017-10-24 Taiwan Semiconductor Manufacturing Company Limited Patterned processing kits for material processing
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield

Also Published As

Publication number Publication date
CN109321890A (en) 2019-02-12
TW202124746A (en) 2021-07-01
JP7289890B2 (en) 2023-06-12
TW201708588A (en) 2017-03-01
WO2017007729A1 (en) 2017-01-12
JP2018519426A (en) 2018-07-19
JP2022022225A (en) 2022-02-03
CN117867462A (en) 2024-04-12
KR20180016628A (en) 2018-02-14
CN107787377A (en) 2018-03-09
TWI713543B (en) 2020-12-21
US9909206B2 (en) 2018-03-06
JP6976925B2 (en) 2021-12-08
TWI770678B (en) 2022-07-11
US20170002461A1 (en) 2017-01-05

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