TWI502670B - 晶圓製程沉積屏蔽構件 - Google Patents
晶圓製程沉積屏蔽構件 Download PDFInfo
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- TWI502670B TWI502670B TW098112664A TW98112664A TWI502670B TW I502670 B TWI502670 B TW I502670B TW 098112664 A TW098112664 A TW 098112664A TW 98112664 A TW98112664 A TW 98112664A TW I502670 B TWI502670 B TW I502670B
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- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims description 67
- 238000012545 processing Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 82
- 230000008569 process Effects 0.000 claims description 82
- 238000000151 deposition Methods 0.000 claims description 66
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims 1
- 238000007373 indentation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000005086 pumping Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4555608P | 2008-04-16 | 2008-04-16 | |
| US4933408P | 2008-04-30 | 2008-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201003819A TW201003819A (en) | 2010-01-16 |
| TWI502670B true TWI502670B (zh) | 2015-10-01 |
Family
ID=41200217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098112664A TWI502670B (zh) | 2008-04-16 | 2009-04-16 | 晶圓製程沉積屏蔽構件 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20090260982A1 (enExample) |
| JP (1) | JP5916384B2 (enExample) |
| KR (6) | KR101571558B1 (enExample) |
| CN (1) | CN102007572B (enExample) |
| TW (1) | TWI502670B (enExample) |
| WO (1) | WO2009154853A2 (enExample) |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9062379B2 (en) * | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| WO2009135050A2 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Process kit for rf physical vapor deposition |
| US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
| KR20120089647A (ko) * | 2009-08-11 | 2012-08-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｒｆ 물리적 기상 증착을 위한 프로세스 키트 |
| US8580092B2 (en) | 2010-01-29 | 2013-11-12 | Applied Materials, Inc. | Adjustable process spacing, centering, and improved gas conductance |
| US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
| KR20130095276A (ko) * | 2010-08-20 | 2013-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 수명이 연장된 증착 링 |
| CN108359957A (zh) | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| GB201102447D0 (en) * | 2011-02-11 | 2011-03-30 | Spp Process Technology Systems Uk Ltd | Composite shielding |
| EP2487275B1 (en) * | 2011-02-11 | 2016-06-15 | SPTS Technologies Limited | Composite shielding |
| US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
| WO2013026493A1 (en) * | 2011-08-25 | 2013-02-28 | Applied Materials, Inc. | Corner cut mask |
| WO2013094200A1 (ja) * | 2011-12-22 | 2013-06-27 | キヤノンアネルバ株式会社 | 基板処理装置 |
| TWM431893U (en) * | 2012-02-10 | 2012-06-21 | Well Thin Technology Ltd | Deposition ring |
| US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
| US20130277203A1 (en) * | 2012-04-24 | 2013-10-24 | Applied Materials, Inc. | Process kit shield and physical vapor deposition chamber having same |
| WO2014035957A1 (en) * | 2012-08-30 | 2014-03-06 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
| CN103911585A (zh) * | 2013-01-08 | 2014-07-09 | 旭晖应用材料股份有限公司 | 遮罩 |
| KR102072044B1 (ko) * | 2013-09-26 | 2020-01-31 | 주성엔지니어링(주) | 기판 처리 장치 |
| KR102449103B1 (ko) * | 2014-03-12 | 2022-09-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 챔버에서의 웨이퍼 회전 |
| US10053777B2 (en) * | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
| US20150354054A1 (en) * | 2014-06-06 | 2015-12-10 | Applied Materials, Inc. | Cooled process tool adapter for use in substrate processing chambers |
| US10283334B2 (en) * | 2014-08-22 | 2019-05-07 | Applied Materials, Inc. | Methods and apparatus for maintaining low non-uniformity over target life |
| CN105624634B (zh) * | 2014-11-04 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| CN105779932B (zh) * | 2014-12-26 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 用于处理腔室的工艺内衬和物理气相沉积设备 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| CN107406974B (zh) * | 2015-01-19 | 2021-02-12 | 欧瑞康表面解决方案股份公司普费菲孔 | 用于执行真空辅助的涂层方法的涂层腔，隔热板以及涂层方法 |
| US10903055B2 (en) | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
| JP7008509B2 (ja) * | 2015-05-27 | 2022-02-10 | アプライド マテリアルズ インコーポレイテッド | 高成長率のｅｐｉチャンバのための遮熱リング |
| US10755902B2 (en) * | 2015-05-27 | 2020-08-25 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
| KR102709082B1 (ko) | 2015-07-03 | 2024-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 높은 증착 링 및 증착 링 클램프를 갖는 프로세스 키트 |
| US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| US9953812B2 (en) | 2015-10-06 | 2018-04-24 | Applied Materials, Inc. | Integrated process kit for a substrate processing chamber |
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| US10431440B2 (en) * | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| KR102689380B1 (ko) | 2016-01-26 | 2024-07-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 에지 링 리프팅 솔루션 |
| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
| KR102161986B1 (ko) * | 2016-07-06 | 2020-10-06 | 가부시키가이샤 아루박 | 성막 장치, 플래턴 링 |
| US10446420B2 (en) | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
| USD836572S1 (en) | 2016-09-30 | 2018-12-25 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| CN109804455B (zh) * | 2016-10-14 | 2022-03-15 | 瑞士艾发科技 | 溅射源 |
| US10923385B2 (en) * | 2016-11-03 | 2021-02-16 | Lam Research Corporation | Carrier plate for use in plasma processing systems |
| US10697057B2 (en) * | 2016-11-18 | 2020-06-30 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition chamber |
| JP7117300B2 (ja) * | 2016-11-19 | 2022-08-12 | アプライド マテリアルズ インコーポレイテッド | 浮遊シャドウリングを有するプロセスキット |
| US10886113B2 (en) * | 2016-11-25 | 2021-01-05 | Applied Materials, Inc. | Process kit and method for processing a substrate |
| US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| CN108456860B (zh) * | 2017-02-22 | 2020-12-08 | 北京北方华创微电子装备有限公司 | 一种沉积腔室和膜层沉积装置 |
| US11043364B2 (en) * | 2017-06-05 | 2021-06-22 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
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| WO2009154853A3 (en) | 2010-02-25 |
| KR101939640B1 (ko) | 2019-01-17 |
| KR102025330B1 (ko) | 2019-09-25 |
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| US8696878B2 (en) | 2014-04-15 |
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| US20120211359A1 (en) | 2012-08-23 |
| KR20160105989A (ko) | 2016-09-08 |
| KR20110007195A (ko) | 2011-01-21 |
| KR20190092628A (ko) | 2019-08-07 |
| JP5916384B2 (ja) | 2016-05-11 |
| TW201003819A (en) | 2010-01-16 |
| CN102007572B (zh) | 2013-01-16 |
| KR20200067957A (ko) | 2020-06-12 |
| US20090260982A1 (en) | 2009-10-22 |
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