JP5907500B2 - 光電変換装置、光電変換アレイおよび撮像装置 - Google Patents

光電変換装置、光電変換アレイおよび撮像装置 Download PDF

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Publication number
JP5907500B2
JP5907500B2 JP2011222020A JP2011222020A JP5907500B2 JP 5907500 B2 JP5907500 B2 JP 5907500B2 JP 2011222020 A JP2011222020 A JP 2011222020A JP 2011222020 A JP2011222020 A JP 2011222020A JP 5907500 B2 JP5907500 B2 JP 5907500B2
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Japan
Prior art keywords
semiconductor region
field effect
photoelectric conversion
effect transistor
gate
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JP2011222020A
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English (en)
Japanese (ja)
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JP2013085030A (ja
Inventor
林　豊
豊 林
太田　敏隆
敏隆 太田
靖 永宗
靖 永宗
渡辺　博文
博文 渡辺
宝昭 根来
宝昭 根来
君野　和也
和也 君野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Ricoh Co Ltd
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Ricoh Co Ltd
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Priority to JP2011222020A priority Critical patent/JP5907500B2/ja
Application filed by National Institute of Advanced Industrial Science and Technology AIST, Ricoh Co Ltd filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to BR112014008399A priority patent/BR112014008399A2/pt
Priority to US14/349,414 priority patent/US9337234B2/en
Priority to CN201280060268.3A priority patent/CN103975581B/zh
Priority to PCT/JP2012/076557 priority patent/WO2013051734A1/en
Priority to KR1020147011779A priority patent/KR101609960B1/ko
Priority to IN3275CHN2014 priority patent/IN2014CN03275A/en
Priority to EP12838682.8A priority patent/EP2764687A4/en
Publication of JP2013085030A publication Critical patent/JP2013085030A/ja
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Publication of JP5907500B2 publication Critical patent/JP5907500B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2011222020A 2011-10-06 2011-10-06 光電変換装置、光電変換アレイおよび撮像装置 Active JP5907500B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011222020A JP5907500B2 (ja) 2011-10-06 2011-10-06 光電変換装置、光電変換アレイおよび撮像装置
US14/349,414 US9337234B2 (en) 2011-10-06 2012-10-05 Photoelectric converter, photoelectric converter array and imaging device
CN201280060268.3A CN103975581B (zh) 2011-10-06 2012-10-05 光电转换器、光电转换器阵列和成像器件
PCT/JP2012/076557 WO2013051734A1 (en) 2011-10-06 2012-10-05 Photoelectric converter, photoelectric converter array and imaging device
BR112014008399A BR112014008399A2 (pt) 2011-10-06 2012-10-05 conversor fotoelétrico, matriz de conversor fotoelétrico e dispositivo de imagem
KR1020147011779A KR101609960B1 (ko) 2011-10-06 2012-10-05 광전 변환기, 광전 변환 어레이 및 촬상 장치
IN3275CHN2014 IN2014CN03275A (enExample) 2011-10-06 2012-10-05
EP12838682.8A EP2764687A4 (en) 2011-10-06 2012-10-05 PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011222020A JP5907500B2 (ja) 2011-10-06 2011-10-06 光電変換装置、光電変換アレイおよび撮像装置

Publications (2)

Publication Number Publication Date
JP2013085030A JP2013085030A (ja) 2013-05-09
JP5907500B2 true JP5907500B2 (ja) 2016-04-26

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JP2011222020A Active JP5907500B2 (ja) 2011-10-06 2011-10-06 光電変換装置、光電変換アレイおよび撮像装置

Country Status (8)

Country Link
US (1) US9337234B2 (enExample)
EP (1) EP2764687A4 (enExample)
JP (1) JP5907500B2 (enExample)
KR (1) KR101609960B1 (enExample)
CN (1) CN103975581B (enExample)
BR (1) BR112014008399A2 (enExample)
IN (1) IN2014CN03275A (enExample)
WO (1) WO2013051734A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9197220B2 (en) * 2011-10-31 2015-11-24 National Institute Of Advanced Industrial Science And Technology Method for resetting photoelectric conversion device, and photoelectric conversion device
JP6387743B2 (ja) 2013-12-16 2018-09-12 株式会社リコー 半導体装置および半導体装置の製造方法
JP6281297B2 (ja) 2014-01-27 2018-02-21 株式会社リコー フォトトランジスタ、及び半導体装置
JP6354221B2 (ja) 2014-03-12 2018-07-11 株式会社リコー 撮像装置及び電子機器
JP2016025261A (ja) 2014-07-23 2016-02-08 株式会社リコー 撮像装置、撮像装置の制御方法、画素構造
JP6057477B2 (ja) * 2014-10-15 2017-01-11 学校法人加計学園 岡山理科大学 非接触給電装置
JP2016092178A (ja) 2014-11-04 2016-05-23 株式会社リコー 固体撮像素子
JP2016092348A (ja) 2014-11-11 2016-05-23 株式会社リコー 半導体デバイス及びその製造方法、撮像装置
US10497818B2 (en) 2016-07-29 2019-12-03 Canon Kabushiki Kaisha Photodetection device and photodetection system
US9915561B1 (en) * 2016-08-24 2018-03-13 International Business Machines Corporation Self-clocked low noise photoreceiver (SCLNP)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014231A (ja) 1983-07-06 1985-01-24 Ricoh Co Ltd 原稿像読取装置
JPS60259917A (ja) * 1984-06-06 1985-12-23 Fujitsu Ten Ltd 受光回路
JP2501208B2 (ja) * 1987-01-16 1996-05-29 キヤノン株式会社 光電変換装置
US4866293A (en) 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
JPH01288181A (ja) 1988-05-16 1989-11-20 Seiko Instr Inc 半導体イメージセンサ装置
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3590723B2 (ja) * 1998-07-17 2004-11-17 シャープ株式会社 フォトトランジスタチップ
US6856351B1 (en) * 1999-09-16 2005-02-15 Xerox Corporation Device and method for reducing lag and blooming in amorphous silicon sensor arrays
AU2001293062A1 (en) * 2000-09-25 2002-04-08 Foveon, Inc. Active pixel sensor with noise cancellation
JP5584982B2 (ja) * 2009-02-09 2014-09-10 ソニー株式会社 固体撮像素子およびカメラシステム
JP2009141419A (ja) * 2007-12-03 2009-06-25 Panasonic Corp 固体撮像素子
JP5363237B2 (ja) * 2009-08-10 2013-12-11 ローム株式会社 光電変換回路及びそれに用いる光電変換素子
JP5721994B2 (ja) * 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP5403369B2 (ja) * 2010-03-31 2014-01-29 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

Also Published As

Publication number Publication date
EP2764687A4 (en) 2015-10-21
CN103975581B (zh) 2017-09-08
BR112014008399A2 (pt) 2017-09-19
KR20140070652A (ko) 2014-06-10
IN2014CN03275A (enExample) 2015-07-03
EP2764687A1 (en) 2014-08-13
US20140239158A1 (en) 2014-08-28
US9337234B2 (en) 2016-05-10
JP2013085030A (ja) 2013-05-09
WO2013051734A1 (en) 2013-04-11
CN103975581A (zh) 2014-08-06
KR101609960B1 (ko) 2016-04-06

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