BR112014008399A2 - conversor fotoelétrico, matriz de conversor fotoelétrico e dispositivo de imagem - Google Patents
conversor fotoelétrico, matriz de conversor fotoelétrico e dispositivo de imagemInfo
- Publication number
- BR112014008399A2 BR112014008399A2 BR112014008399A BR112014008399A BR112014008399A2 BR 112014008399 A2 BR112014008399 A2 BR 112014008399A2 BR 112014008399 A BR112014008399 A BR 112014008399A BR 112014008399 A BR112014008399 A BR 112014008399A BR 112014008399 A2 BR112014008399 A2 BR 112014008399A2
- Authority
- BR
- Brazil
- Prior art keywords
- photoelectric converter
- imaging device
- matrix
- photoelectric
- converter matrix
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/197—Bipolar transistor image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
- H10F39/1865—Overflow drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011222020A JP5907500B2 (ja) | 2011-10-06 | 2011-10-06 | 光電変換装置、光電変換アレイおよび撮像装置 |
| PCT/JP2012/076557 WO2013051734A1 (en) | 2011-10-06 | 2012-10-05 | Photoelectric converter, photoelectric converter array and imaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112014008399A2 true BR112014008399A2 (pt) | 2017-09-19 |
Family
ID=48043886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112014008399A BR112014008399A2 (pt) | 2011-10-06 | 2012-10-05 | conversor fotoelétrico, matriz de conversor fotoelétrico e dispositivo de imagem |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9337234B2 (enExample) |
| EP (1) | EP2764687A4 (enExample) |
| JP (1) | JP5907500B2 (enExample) |
| KR (1) | KR101609960B1 (enExample) |
| CN (1) | CN103975581B (enExample) |
| BR (1) | BR112014008399A2 (enExample) |
| IN (1) | IN2014CN03275A (enExample) |
| WO (1) | WO2013051734A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9197220B2 (en) * | 2011-10-31 | 2015-11-24 | National Institute Of Advanced Industrial Science And Technology | Method for resetting photoelectric conversion device, and photoelectric conversion device |
| JP6387743B2 (ja) | 2013-12-16 | 2018-09-12 | 株式会社リコー | 半導体装置および半導体装置の製造方法 |
| JP6281297B2 (ja) | 2014-01-27 | 2018-02-21 | 株式会社リコー | フォトトランジスタ、及び半導体装置 |
| JP6354221B2 (ja) | 2014-03-12 | 2018-07-11 | 株式会社リコー | 撮像装置及び電子機器 |
| JP2016025261A (ja) | 2014-07-23 | 2016-02-08 | 株式会社リコー | 撮像装置、撮像装置の制御方法、画素構造 |
| JP6057477B2 (ja) * | 2014-10-15 | 2017-01-11 | 学校法人加計学園 岡山理科大学 | 非接触給電装置 |
| JP2016092178A (ja) | 2014-11-04 | 2016-05-23 | 株式会社リコー | 固体撮像素子 |
| JP2016092348A (ja) | 2014-11-11 | 2016-05-23 | 株式会社リコー | 半導体デバイス及びその製造方法、撮像装置 |
| US10497818B2 (en) | 2016-07-29 | 2019-12-03 | Canon Kabushiki Kaisha | Photodetection device and photodetection system |
| US9915561B1 (en) * | 2016-08-24 | 2018-03-13 | International Business Machines Corporation | Self-clocked low noise photoreceiver (SCLNP) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014231A (ja) | 1983-07-06 | 1985-01-24 | Ricoh Co Ltd | 原稿像読取装置 |
| JPS60259917A (ja) * | 1984-06-06 | 1985-12-23 | Fujitsu Ten Ltd | 受光回路 |
| JP2501208B2 (ja) * | 1987-01-16 | 1996-05-29 | キヤノン株式会社 | 光電変換装置 |
| US4866293A (en) | 1986-12-09 | 1989-09-12 | Canon Kabushiki Kaisha | Photoelectric converting apparatus to prevent the outflow of excess carriers |
| JPH01288181A (ja) | 1988-05-16 | 1989-11-20 | Seiko Instr Inc | 半導体イメージセンサ装置 |
| TW421962B (en) * | 1997-09-29 | 2001-02-11 | Canon Kk | Image sensing device using mos type image sensing elements |
| JP3590723B2 (ja) * | 1998-07-17 | 2004-11-17 | シャープ株式会社 | フォトトランジスタチップ |
| US6856351B1 (en) * | 1999-09-16 | 2005-02-15 | Xerox Corporation | Device and method for reducing lag and blooming in amorphous silicon sensor arrays |
| AU2001293062A1 (en) * | 2000-09-25 | 2002-04-08 | Foveon, Inc. | Active pixel sensor with noise cancellation |
| JP5584982B2 (ja) * | 2009-02-09 | 2014-09-10 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
| JP2009141419A (ja) * | 2007-12-03 | 2009-06-25 | Panasonic Corp | 固体撮像素子 |
| JP5363237B2 (ja) * | 2009-08-10 | 2013-12-11 | ローム株式会社 | 光電変換回路及びそれに用いる光電変換素子 |
| JP5721994B2 (ja) * | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
| JP5403369B2 (ja) * | 2010-03-31 | 2014-01-29 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
-
2011
- 2011-10-06 JP JP2011222020A patent/JP5907500B2/ja active Active
-
2012
- 2012-10-05 IN IN3275CHN2014 patent/IN2014CN03275A/en unknown
- 2012-10-05 EP EP12838682.8A patent/EP2764687A4/en not_active Withdrawn
- 2012-10-05 WO PCT/JP2012/076557 patent/WO2013051734A1/en not_active Ceased
- 2012-10-05 US US14/349,414 patent/US9337234B2/en not_active Expired - Fee Related
- 2012-10-05 KR KR1020147011779A patent/KR101609960B1/ko not_active Expired - Fee Related
- 2012-10-05 BR BR112014008399A patent/BR112014008399A2/pt not_active IP Right Cessation
- 2012-10-05 CN CN201280060268.3A patent/CN103975581B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2764687A4 (en) | 2015-10-21 |
| CN103975581B (zh) | 2017-09-08 |
| KR20140070652A (ko) | 2014-06-10 |
| IN2014CN03275A (enExample) | 2015-07-03 |
| EP2764687A1 (en) | 2014-08-13 |
| JP5907500B2 (ja) | 2016-04-26 |
| US20140239158A1 (en) | 2014-08-28 |
| US9337234B2 (en) | 2016-05-10 |
| JP2013085030A (ja) | 2013-05-09 |
| WO2013051734A1 (en) | 2013-04-11 |
| CN103975581A (zh) | 2014-08-06 |
| KR101609960B1 (ko) | 2016-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 7A ANUIDADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2534 DE 30-07-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |