JP5905970B2 - 発光ダイオードパッケージの製造方法 - Google Patents
発光ダイオードパッケージの製造方法 Download PDFInfo
- Publication number
- JP5905970B2 JP5905970B2 JP2014538696A JP2014538696A JP5905970B2 JP 5905970 B2 JP5905970 B2 JP 5905970B2 JP 2014538696 A JP2014538696 A JP 2014538696A JP 2014538696 A JP2014538696 A JP 2014538696A JP 5905970 B2 JP5905970 B2 JP 5905970B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- cavity
- air discharge
- discharge passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive effect Effects 0.000 claims description 24
- 239000003566 sealing material Substances 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims 2
- 239000003292 glue Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (3)
- キャビティ及び前記キャビティから延長する空気排出通路を有し、前記空気排出通路が前記キャビティに連接する一端にシール材遮断ダムを有するパッケージ本体を準備し、
前記パッケージ本体のキャビティ内に発光ダイオードを実装し、
接着剤を用いて前記キャビティの上部を覆うように透明部材を接着し、
シール材を、前記シール材遮断ダムを超えないように形成することによって前記空気排出通路を遮断することを含む発光ダイオードパッケージの製造方法。 - 前記接着剤は、熱硬化樹脂または紫外線硬化樹脂である、請求項1に記載の発光ダイオードパッケージの製造方法。
- 前記シール材は、前記透明部材の外部に露出した空気排出通路に硬化樹脂を注入した後、前記硬化樹脂を硬化させることによって形成される、請求項2に記載の発光ダイオードパッケージの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0112025 | 2011-10-31 | ||
KR1020110112025A KR101959035B1 (ko) | 2011-10-31 | 2011-10-31 | 발광 다이오드 패키지 및 그것을 제조하는 방법 |
PCT/KR2012/008153 WO2013065958A1 (ko) | 2011-10-31 | 2012-10-09 | 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014532986A JP2014532986A (ja) | 2014-12-08 |
JP5905970B2 true JP5905970B2 (ja) | 2016-04-20 |
Family
ID=48192269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014538696A Expired - Fee Related JP5905970B2 (ja) | 2011-10-31 | 2012-10-09 | 発光ダイオードパッケージの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9450159B2 (ja) |
EP (1) | EP2775538B1 (ja) |
JP (1) | JP5905970B2 (ja) |
KR (1) | KR101959035B1 (ja) |
WO (1) | WO2013065958A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9799802B2 (en) * | 2013-05-23 | 2017-10-24 | Lg Innotek Co., Ltd. | Light emitting module |
DE102013220960A1 (de) * | 2013-10-16 | 2015-04-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
KR102221598B1 (ko) * | 2014-06-16 | 2021-03-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
JP6668022B2 (ja) * | 2015-09-17 | 2020-03-18 | 日機装株式会社 | 発光モジュールおよび発光モジュールの製造方法 |
KR20180082041A (ko) * | 2017-01-09 | 2018-07-18 | 삼성전자주식회사 | 발광 소자 패키지, 그 제조 방법, 발광 소자 패키지를 포함하는 백라이트 유닛, 및 표시 장치 |
JP2020043235A (ja) | 2018-09-11 | 2020-03-19 | 豊田合成株式会社 | 発光装置 |
CN111276588B (zh) * | 2018-12-05 | 2021-09-28 | 光宝光电(常州)有限公司 | 发光封装结构及其制造方法 |
CN109451228B (zh) * | 2018-12-24 | 2020-11-10 | 华为技术有限公司 | 摄像组件及电子设备 |
US11894499B2 (en) * | 2020-07-01 | 2024-02-06 | Creeled, Inc. | Lens arrangements for light-emitting diode packages |
WO2023287206A1 (ko) * | 2021-07-14 | 2023-01-19 | 서울바이오시스주식회사 | 발광 패키지 |
CN114334941B (zh) * | 2022-03-04 | 2022-05-31 | 至芯半导体(杭州)有限公司 | 一种紫外器件封装结构 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3915873B2 (ja) | 2000-11-10 | 2007-05-16 | セイコーエプソン株式会社 | 光学装置の製造方法 |
JP2004119881A (ja) * | 2002-09-27 | 2004-04-15 | Sony Corp | 半導体装置及びその製造方法 |
JP4504662B2 (ja) | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | Ledランプ |
JP2006049657A (ja) * | 2004-08-06 | 2006-02-16 | Citizen Electronics Co Ltd | Ledランプ |
JP2007066939A (ja) * | 2005-08-29 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP4881001B2 (ja) | 2005-12-29 | 2012-02-22 | シチズン電子株式会社 | 発光装置 |
KR101198762B1 (ko) * | 2006-06-22 | 2012-11-12 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
US7906794B2 (en) * | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
KR101242118B1 (ko) * | 2006-09-26 | 2013-03-12 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
JP4993616B2 (ja) | 2008-03-05 | 2012-08-08 | 株式会社エンプラス | 発光装置、面光源装置、及び表示装置 |
JP5256848B2 (ja) | 2008-05-29 | 2013-08-07 | 日亜化学工業株式会社 | 半導体装置 |
JP4798725B2 (ja) | 2009-03-25 | 2011-10-19 | スタンレー電気株式会社 | 照明装置 |
TW201115775A (en) * | 2009-10-19 | 2011-05-01 | Everlight Electronics Co Ltd | Light emitting diode package structure |
KR101647796B1 (ko) * | 2010-04-06 | 2016-08-12 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
WO2012014360A1 (ja) * | 2010-07-26 | 2012-02-02 | 株式会社小糸製作所 | 発光モジュール |
-
2011
- 2011-10-31 KR KR1020110112025A patent/KR101959035B1/ko active IP Right Grant
-
2012
- 2012-10-09 JP JP2014538696A patent/JP5905970B2/ja not_active Expired - Fee Related
- 2012-10-09 EP EP12844955.0A patent/EP2775538B1/en active Active
- 2012-10-09 US US14/355,521 patent/US9450159B2/en active Active
- 2012-10-09 WO PCT/KR2012/008153 patent/WO2013065958A1/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US9450159B2 (en) | 2016-09-20 |
WO2013065958A1 (ko) | 2013-05-10 |
US20140284650A1 (en) | 2014-09-25 |
JP2014532986A (ja) | 2014-12-08 |
EP2775538B1 (en) | 2017-09-13 |
EP2775538A1 (en) | 2014-09-10 |
EP2775538A4 (en) | 2015-06-03 |
KR101959035B1 (ko) | 2019-03-18 |
KR20130047169A (ko) | 2013-05-08 |
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