JP5897379B2 - 半導体面の加工方法 - Google Patents

半導体面の加工方法 Download PDF

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Publication number
JP5897379B2
JP5897379B2 JP2012080481A JP2012080481A JP5897379B2 JP 5897379 B2 JP5897379 B2 JP 5897379B2 JP 2012080481 A JP2012080481 A JP 2012080481A JP 2012080481 A JP2012080481 A JP 2012080481A JP 5897379 B2 JP5897379 B2 JP 5897379B2
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JP
Japan
Prior art keywords
semiconductor
intermediate layer
semiconductor layer
layer
resist
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Expired - Fee Related
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JP2012080481A
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English (en)
Japanese (ja)
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JP2013211403A (ja
JP2013211403A5 (enExample
Inventor
頼史 西本
頼史 西本
竜二 山日
竜二 山日
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2012080481A priority Critical patent/JP5897379B2/ja
Priority to US13/853,679 priority patent/US8969208B2/en
Publication of JP2013211403A publication Critical patent/JP2013211403A/ja
Publication of JP2013211403A5 publication Critical patent/JP2013211403A5/ja
Application granted granted Critical
Publication of JP5897379B2 publication Critical patent/JP5897379B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012080481A 2012-03-30 2012-03-30 半導体面の加工方法 Expired - Fee Related JP5897379B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012080481A JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法
US13/853,679 US8969208B2 (en) 2012-03-30 2013-03-29 Method to form convex structure on surface of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012080481A JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法

Publications (3)

Publication Number Publication Date
JP2013211403A JP2013211403A (ja) 2013-10-10
JP2013211403A5 JP2013211403A5 (enExample) 2015-05-07
JP5897379B2 true JP5897379B2 (ja) 2016-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012080481A Expired - Fee Related JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法

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US (1) US8969208B2 (enExample)
JP (1) JP5897379B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2775487C (en) 2011-04-26 2019-06-04 Wcm Industries, Inc. Device for concealing a plate associated with overflow plumbing
US12206032B2 (en) * 2020-07-31 2025-01-21 Apple Inc. Wideband back-illuminated electromagnetic radiation detectors
US12125865B2 (en) 2021-03-31 2024-10-22 Apple Inc. Electromagnetic radiation detectors integrated with immersion lenses
CN114284377B (zh) * 2021-12-31 2023-07-28 武汉锐科光纤激光技术股份有限公司 双面Si基AlGaN探测器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63315600A (ja) * 1987-06-18 1988-12-23 Matsushita Electric Ind Co Ltd 選択結晶埋込み成長法
JPH03210506A (ja) * 1990-01-16 1991-09-13 Fujitsu Ltd 光半導体装置
JPH05136460A (ja) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd マイクロレンズ形成方法
JPH06104480A (ja) 1992-09-21 1994-04-15 Nec Corp 半導体光素子の製造方法
JPH08195505A (ja) * 1995-01-17 1996-07-30 Toshiba Corp 半導体発光素子及びその製造方法
JPH09326511A (ja) 1996-06-05 1997-12-16 Toshiba Electron Eng Corp 光半導体素子およびその製造方法
KR100382723B1 (ko) * 2000-11-13 2003-05-09 삼성전자주식회사 고체촬상소자 및 그 제조방법
JP4830306B2 (ja) * 2004-06-23 2011-12-07 凸版印刷株式会社 固体撮像素子の製造方法
JP4207878B2 (ja) * 2004-10-15 2009-01-14 セイコーエプソン株式会社 面発光レーザ、面発光レーザの製造方法、デバイス及び電子機器
KR101065077B1 (ko) * 2008-11-05 2011-09-15 삼성전자주식회사 시료 검출용 기판, 이를 채용한 바이오칩, 시료 검출용 기판의 제조방법 및 바이오 물질 검출장치

Also Published As

Publication number Publication date
US20130260565A1 (en) 2013-10-03
JP2013211403A (ja) 2013-10-10
US8969208B2 (en) 2015-03-03

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