JP2006119651A5 - - Google Patents
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- Publication number
- JP2006119651A5 JP2006119651A5 JP2005306747A JP2005306747A JP2006119651A5 JP 2006119651 A5 JP2006119651 A5 JP 2006119651A5 JP 2005306747 A JP2005306747 A JP 2005306747A JP 2005306747 A JP2005306747 A JP 2005306747A JP 2006119651 A5 JP2006119651 A5 JP 2006119651A5
- Authority
- JP
- Japan
- Prior art keywords
- phase shift
- shift mask
- layer
- groove
- grooved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010363 phase shift Effects 0.000 claims 33
- 239000000463 material Substances 0.000 claims 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 10
- 230000003667 anti-reflective effect Effects 0.000 claims 9
- 230000000903 blocking effect Effects 0.000 claims 8
- 229910052804 chromium Inorganic materials 0.000 claims 8
- 239000011651 chromium Substances 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/973,526 US7384714B2 (en) | 2004-10-25 | 2004-10-25 | Anti-reflective sidewall coated alternating phase shift mask and fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006119651A JP2006119651A (ja) | 2006-05-11 |
| JP2006119651A5 true JP2006119651A5 (enExample) | 2008-12-04 |
Family
ID=36206554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005306747A Pending JP2006119651A (ja) | 2004-10-25 | 2005-10-21 | 位相シフトマスクを製作するための方法および位相シフトマスク |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7384714B2 (enExample) |
| JP (1) | JP2006119651A (enExample) |
| SG (1) | SG121937A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7674562B2 (en) * | 2005-12-07 | 2010-03-09 | Chartered Semiconductor Manufacturing, Ltd. | Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask |
| US20080261122A1 (en) * | 2007-04-20 | 2008-10-23 | Jeffrey Peter Gambino | Photolithography mask with protective capping layer |
| US20080261120A1 (en) * | 2007-04-20 | 2008-10-23 | Jeffrey Peter Gambino | Photolithography mask with integrally formed protective capping layer |
| US20080261121A1 (en) * | 2007-04-20 | 2008-10-23 | Jeffrey Peter Gambino | Photolithography mask with protective silicide capping layer |
| JP2008299159A (ja) * | 2007-06-01 | 2008-12-11 | Nec Electronics Corp | レベンソンマスク及びレベンソンマスクの製造方法 |
| US20080311485A1 (en) * | 2007-06-12 | 2008-12-18 | William Stanton | Photomasks Used to Fabricate Integrated Circuitry, Finished-Construction Binary Photomasks Used to Fabricate Integrated Circuitry, Methods of Forming Photomasks, and Methods of Photolithographically Patterning Substrates |
| US20090226823A1 (en) * | 2008-03-06 | 2009-09-10 | Micron Technology, Inc. | Reticles including assistant structures, methods of forming such reticles, and methods of utilizing such reticles |
| CN102365584B (zh) | 2009-01-29 | 2014-07-30 | 迪吉福来克斯有限公司 | 用于在光聚合物表面上产生光掩模的工艺 |
| US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
| US8846273B2 (en) | 2012-06-04 | 2014-09-30 | Micron Technology, Inc. | Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate |
| CN108650794B (zh) * | 2018-06-04 | 2023-01-17 | 上海量子绘景电子股份有限公司 | 一种线路板的制备方法 |
| CN112099308B (zh) * | 2020-10-22 | 2025-04-11 | 泉芯集成电路制造(济南)有限公司 | 衰减相移掩模版及其制程方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5418095A (en) | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| AU5681194A (en) | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5411824A (en) | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| JP3750312B2 (ja) * | 1997-10-20 | 2006-03-01 | ソニー株式会社 | 位相シフトマスク及び位相シフトマスクの製造方法 |
| JP2002289592A (ja) * | 2001-03-28 | 2002-10-04 | Sony Corp | 半導体装置の製造方法 |
| JP2003043662A (ja) * | 2001-08-01 | 2003-02-13 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク |
| US6824932B2 (en) * | 2002-06-05 | 2004-11-30 | International Business Machines Corporation | Self-aligned alternating phase shift mask patterning process |
-
2004
- 2004-10-25 US US10/973,526 patent/US7384714B2/en active Active
-
2005
- 2005-08-26 SG SG200505529A patent/SG121937A1/en unknown
- 2005-10-21 JP JP2005306747A patent/JP2006119651A/ja active Pending
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