SG121937A1 - Anti-reflective sidewall coated alternating phase shift mask and fabrication method - Google Patents

Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Info

Publication number
SG121937A1
SG121937A1 SG200505529A SG200505529A SG121937A1 SG 121937 A1 SG121937 A1 SG 121937A1 SG 200505529 A SG200505529 A SG 200505529A SG 200505529 A SG200505529 A SG 200505529A SG 121937 A1 SG121937 A1 SG 121937A1
Authority
SG
Singapore
Prior art keywords
phase shift
fabrication method
shift mask
alternating phase
reflective sidewall
Prior art date
Application number
SG200505529A
Other languages
English (en)
Inventor
Tan Sia Kim
Lin Qunying
Hsia Liang-Choo
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG121937A1 publication Critical patent/SG121937A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200505529A 2004-10-25 2005-08-26 Anti-reflective sidewall coated alternating phase shift mask and fabrication method SG121937A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/973,526 US7384714B2 (en) 2004-10-25 2004-10-25 Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Publications (1)

Publication Number Publication Date
SG121937A1 true SG121937A1 (en) 2006-05-26

Family

ID=36206554

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200505529A SG121937A1 (en) 2004-10-25 2005-08-26 Anti-reflective sidewall coated alternating phase shift mask and fabrication method

Country Status (3)

Country Link
US (1) US7384714B2 (enExample)
JP (1) JP2006119651A (enExample)
SG (1) SG121937A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674562B2 (en) * 2005-12-07 2010-03-09 Chartered Semiconductor Manufacturing, Ltd. Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask
US20080261122A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with protective capping layer
US20080261121A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with protective silicide capping layer
US20080261120A1 (en) * 2007-04-20 2008-10-23 Jeffrey Peter Gambino Photolithography mask with integrally formed protective capping layer
JP2008299159A (ja) * 2007-06-01 2008-12-11 Nec Electronics Corp レベンソンマスク及びレベンソンマスクの製造方法
US20080311485A1 (en) * 2007-06-12 2008-12-18 William Stanton Photomasks Used to Fabricate Integrated Circuitry, Finished-Construction Binary Photomasks Used to Fabricate Integrated Circuitry, Methods of Forming Photomasks, and Methods of Photolithographically Patterning Substrates
US20090226823A1 (en) * 2008-03-06 2009-09-10 Micron Technology, Inc. Reticles including assistant structures, methods of forming such reticles, and methods of utilizing such reticles
EP2391924B1 (en) 2009-01-29 2013-07-24 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8846273B2 (en) 2012-06-04 2014-09-30 Micron Technology, Inc. Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate
CN108650794B (zh) * 2018-06-04 2023-01-17 上海量子绘景电子股份有限公司 一种线路板的制备方法
CN112099308B (zh) * 2020-10-22 2025-04-11 泉芯集成电路制造(济南)有限公司 衰减相移掩模版及其制程方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411824A (en) 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
WO1994017449A1 (en) 1993-01-21 1994-08-04 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
JP3750312B2 (ja) * 1997-10-20 2006-03-01 ソニー株式会社 位相シフトマスク及び位相シフトマスクの製造方法
JP2002289592A (ja) * 2001-03-28 2002-10-04 Sony Corp 半導体装置の製造方法
JP2003043662A (ja) * 2001-08-01 2003-02-13 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク
US6824932B2 (en) * 2002-06-05 2004-11-30 International Business Machines Corporation Self-aligned alternating phase shift mask patterning process

Also Published As

Publication number Publication date
US20060088771A1 (en) 2006-04-27
US7384714B2 (en) 2008-06-10
JP2006119651A (ja) 2006-05-11

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