JP2013211403A5 - - Google Patents

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Publication number
JP2013211403A5
JP2013211403A5 JP2012080481A JP2012080481A JP2013211403A5 JP 2013211403 A5 JP2013211403 A5 JP 2013211403A5 JP 2012080481 A JP2012080481 A JP 2012080481A JP 2012080481 A JP2012080481 A JP 2012080481A JP 2013211403 A5 JP2013211403 A5 JP 2013211403A5
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JP
Japan
Prior art keywords
intermediate layer
semiconductor
transfer step
mask
curvature
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JP2012080481A
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English (en)
Japanese (ja)
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JP2013211403A (ja
JP5897379B2 (ja
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Priority to JP2012080481A priority Critical patent/JP5897379B2/ja
Priority claimed from JP2012080481A external-priority patent/JP5897379B2/ja
Priority to US13/853,679 priority patent/US8969208B2/en
Publication of JP2013211403A publication Critical patent/JP2013211403A/ja
Publication of JP2013211403A5 publication Critical patent/JP2013211403A5/ja
Application granted granted Critical
Publication of JP5897379B2 publication Critical patent/JP5897379B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012080481A 2012-03-30 2012-03-30 半導体面の加工方法 Expired - Fee Related JP5897379B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012080481A JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法
US13/853,679 US8969208B2 (en) 2012-03-30 2013-03-29 Method to form convex structure on surface of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012080481A JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法

Publications (3)

Publication Number Publication Date
JP2013211403A JP2013211403A (ja) 2013-10-10
JP2013211403A5 true JP2013211403A5 (enExample) 2015-05-07
JP5897379B2 JP5897379B2 (ja) 2016-03-30

Family

ID=49235587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012080481A Expired - Fee Related JP5897379B2 (ja) 2012-03-30 2012-03-30 半導体面の加工方法

Country Status (2)

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US (1) US8969208B2 (enExample)
JP (1) JP5897379B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2775487C (en) 2011-04-26 2019-06-04 Wcm Industries, Inc. Device for concealing a plate associated with overflow plumbing
US12206032B2 (en) * 2020-07-31 2025-01-21 Apple Inc. Wideband back-illuminated electromagnetic radiation detectors
US12125865B2 (en) 2021-03-31 2024-10-22 Apple Inc. Electromagnetic radiation detectors integrated with immersion lenses
CN114284377B (zh) * 2021-12-31 2023-07-28 武汉锐科光纤激光技术股份有限公司 双面Si基AlGaN探测器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63315600A (ja) * 1987-06-18 1988-12-23 Matsushita Electric Ind Co Ltd 選択結晶埋込み成長法
JPH03210506A (ja) * 1990-01-16 1991-09-13 Fujitsu Ltd 光半導体装置
JPH05136460A (ja) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd マイクロレンズ形成方法
JPH06104480A (ja) 1992-09-21 1994-04-15 Nec Corp 半導体光素子の製造方法
JPH08195505A (ja) * 1995-01-17 1996-07-30 Toshiba Corp 半導体発光素子及びその製造方法
JPH09326511A (ja) 1996-06-05 1997-12-16 Toshiba Electron Eng Corp 光半導体素子およびその製造方法
KR100382723B1 (ko) * 2000-11-13 2003-05-09 삼성전자주식회사 고체촬상소자 및 그 제조방법
JP4830306B2 (ja) * 2004-06-23 2011-12-07 凸版印刷株式会社 固体撮像素子の製造方法
JP4207878B2 (ja) * 2004-10-15 2009-01-14 セイコーエプソン株式会社 面発光レーザ、面発光レーザの製造方法、デバイス及び電子機器
KR101065077B1 (ko) * 2008-11-05 2011-09-15 삼성전자주식회사 시료 검출용 기판, 이를 채용한 바이오칩, 시료 검출용 기판의 제조방법 및 바이오 물질 검출장치

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