JP5896346B2 - 炭化珪素半導体 - Google Patents

炭化珪素半導体 Download PDF

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Publication number
JP5896346B2
JP5896346B2 JP2015051636A JP2015051636A JP5896346B2 JP 5896346 B2 JP5896346 B2 JP 5896346B2 JP 2015051636 A JP2015051636 A JP 2015051636A JP 2015051636 A JP2015051636 A JP 2015051636A JP 5896346 B2 JP5896346 B2 JP 5896346B2
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Prior art keywords
gas
silicon carbide
nitrogen
substrate
carbide semiconductor
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Japanese (ja)
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JP2015122540A5 (enExample
JP2015122540A (ja
Inventor
太郎 西口
太郎 西口
原田　真
真 原田
木下　博之
博之 木下
弘 塩見
弘 塩見
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2015051636A priority Critical patent/JP5896346B2/ja
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JP2015051636A 2015-03-16 2015-03-16 炭化珪素半導体 Expired - Lifetime JP5896346B2 (ja)

Priority Applications (1)

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JP2015051636A JP5896346B2 (ja) 2015-03-16 2015-03-16 炭化珪素半導体

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JP2015051636A JP5896346B2 (ja) 2015-03-16 2015-03-16 炭化珪素半導体

Related Parent Applications (1)

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JP2014089900A Division JP2014166957A (ja) 2014-04-24 2014-04-24 炭化珪素半導体およびその製造方法と製造装置

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JP2015122540A JP2015122540A (ja) 2015-07-02
JP2015122540A5 JP2015122540A5 (enExample) 2015-12-24
JP5896346B2 true JP5896346B2 (ja) 2016-03-30

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115961346A (zh) * 2022-12-29 2023-04-14 深圳市重投天科半导体有限公司 大尺寸碳化硅外延气体供应装置及供应方法
CN117373913B (zh) * 2023-10-19 2025-05-16 瀚天天成电子科技(厦门)股份有限公司 一种n型掺杂碳化硅的外延生长工艺
CN118064871B (zh) * 2023-12-29 2025-05-09 苏州精材半导体科技有限公司 一种电阻率均匀的碳化硅膜及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177700A (ja) * 1984-09-20 1986-04-21 Nec Corp ２−６族化合物半導体への窒素ド−ピング方法
JP2749898B2 (ja) * 1989-08-21 1998-05-13 昭和電工株式会社 半導体ＳｉＣ単結晶の製造法
JPH04111419A (ja) * 1990-08-31 1992-04-13 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体気相成長法および装置
JPH0570295A (ja) * 1991-03-28 1993-03-23 Tdk Corp 単結晶炭化珪素の形成方法
JPH0629228A (ja) * 1992-07-10 1994-02-04 Nec Corp 結晶成長方法
JPH07131067A (ja) * 1993-11-08 1995-05-19 Sanyo Electric Co Ltd 炭化ケイ素ウエハの製造方法及び炭化ケイ素発光ダイオード素子の製造方法
JP3671532B2 (ja) * 1996-07-19 2005-07-13 豊田合成株式会社 半導体発光素子の製造方法
JP3650727B2 (ja) * 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
JP4374786B2 (ja) * 2001-02-23 2009-12-02 住友電気工業株式会社 Ｃｖｄ装置および薄膜製造方法
US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
JP4284944B2 (ja) * 2002-08-23 2009-06-24 ソニー株式会社 窒化ガリウム系半導体レーザ素子の製造方法

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