JP5894372B2 - 光電気素子、及び光電気素子の製造方法 - Google Patents
光電気素子、及び光電気素子の製造方法 Download PDFInfo
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- JP5894372B2 JP5894372B2 JP2011053585A JP2011053585A JP5894372B2 JP 5894372 B2 JP5894372 B2 JP 5894372B2 JP 2011053585 A JP2011053585 A JP 2011053585A JP 2011053585 A JP2011053585 A JP 2011053585A JP 5894372 B2 JP5894372 B2 JP 5894372B2
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- electrode
- organic compound
- transport layer
- photosensitizer
- electron transport
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- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 125000003710 aryl alkyl group Chemical group 0.000 description 1
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- 239000000987 azo dye Substances 0.000 description 1
- SIOVKLKJSOKLIF-UHFFFAOYSA-N bis(trimethylsilyl)acetamide Chemical compound C[Si](C)(C)OC(C)=N[Si](C)(C)C SIOVKLKJSOKLIF-UHFFFAOYSA-N 0.000 description 1
- CKTMNVYYEURBPC-UHFFFAOYSA-N bromic acid;2-bromoethanamine Chemical compound NCCBr.OBr(=O)=O CKTMNVYYEURBPC-UHFFFAOYSA-N 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 125000005842 heteroatom Chemical group 0.000 description 1
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- COHYTHOBJLSHDF-BUHFOSPRSA-N indigo dye Chemical compound N\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-BUHFOSPRSA-N 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- BQPIGGFYSBELGY-UHFFFAOYSA-N mercury(2+) Chemical compound [Hg+2] BQPIGGFYSBELGY-UHFFFAOYSA-N 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- CZNGTXVOZOWWKM-UHFFFAOYSA-N methyl 4-bromobenzoate Chemical compound COC(=O)C1=CC=C(Br)C=C1 CZNGTXVOZOWWKM-UHFFFAOYSA-N 0.000 description 1
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
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- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
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- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- PEQHIRFAKIASBK-UHFFFAOYSA-N tetraphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 PEQHIRFAKIASBK-UHFFFAOYSA-N 0.000 description 1
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- SIOVKLKJSOKLIF-HJWRWDBZSA-N trimethylsilyl (1z)-n-trimethylsilylethanimidate Chemical compound C[Si](C)(C)OC(/C)=N\[Si](C)(C)C SIOVKLKJSOKLIF-HJWRWDBZSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
前記電子輸送層が、下記構造式(1)に示す構造を有する部位を1分子内に2つ以上有する前駆体が電解重合することにより生成する有機化合物から形成され、
前記有機化合物と、この有機化合物に浸透している電解質溶液とで構成されるゲル層を備える。
本発明に係る光電気素子において、前記前駆体が、前記構造式(1)に示す構造を有する部位を1分子内に2つ有し、前記有機化合物が直鎖状の重合体であってもよい。
前記前駆体を含む液体に前記第一の電極を浸漬させ、前記液体と前記第一の電極とを通電させて電解重合により前記第一の電極の表面上に前記有機化合物を析出させる工程を含む。
ゲル乾燥体とは、ゲル層6を乾燥させたものを指す。ゲル層6の乾燥とは、ゲル層6に内包される溶液の除去、特には溶媒の除去を指す。ゲル層6を乾燥させる方法としては、加熱、真空環境中での溶液または溶媒の除去、他の溶媒でのゲル層6に内包される溶液又は溶媒の除去などが挙げられる。
(Xi)nはゲル部位を示し、Xiはゲル部位を形成する化合物のモノマーを示す。ゲル部位は例えばポリマー骨格で形成される。モノマーの重合度nは、n=1〜10万の範囲が好ましい。Yは(Xi)nに結合している酸化還元部を示す。またj,kはそれぞれ1分子中に含まれる(Xi)n、Yの数を表す任意の整数であり、いずれも1〜10万の範囲が好ましい。酸化還元部Yはゲル部位(Xi)nを構成するポリマー骨格のいかなる部位に結合していてもよい。
(前駆体の調製)
4−シアノピリジン及び1,3,5−(ブロモメチル)−メシチレンを、アセトニトリルに溶解し、不活性雰囲気下で終夜還流しながら、下記反応式で示す反応を進行させた。反応終了後、メタノールで生成物を再結晶精製することで、下記化学式(J-1)で表せられる前駆体を得た。
フッ素ドープ酸化スズ膜を有する厚み1mmの導電性ガラス基板(旭硝子製、10Ω/□)を用意した。このフッ素ドープ酸化スズ膜を第一の電極2とした。
実施例1において、色素の種類、及び電解質溶液中の電解質の種類を、表1に示すように変更した。表中のD102は三菱製紙株式会社製の下記化学式[化22]に示す色素、D358は三菱製紙株式会社製の下記化学式[化23]に示す色素を示す。Iはヨウ素を示し、この場合、電解質溶液中にはNaI(ヨウ化ナトリウム)を加えた。それ以外は実施例1と同じ条件で、光電気素子1を得た。
100mlのアセトニトリルに、10.4g(0.1mol)の4−シアノピリジンと4.3g(0.02mol)のジブロモブタンとを溶解させることで、溶液を調製した。この溶液を不活性雰囲気下で82℃の温度で12時間、沸点還流することで、下記[化24]の反応式で示す反応を進行させた。これにより得られた淡黄色の沈殿物をアセトニトリル洗浄した後、濾別、水及びメタノールを用いた再結晶精製を順次経ることで、下記化学式(J−2)で表せられる前駆体の黄色板状結晶を、60%の収率で得た。
100mlのアセトニトリルに、10.4g(0.1mol)の4−シアノピリジンと5.2g(0.02mol)のp−ジブロモキシレンとを溶解させることで、溶液を調製した。この溶液を不活性雰囲気下で82℃の温度で12時間、沸点還流することで、下記[化25]の反応式で示す反応を進行させた。これにより得られた淡黄色の沈殿物をアセトニトリル洗浄した後、濾別、水及びメタノールを用いた再結晶精製を順次経ることで、下記化学式(J−3)で表せられる前駆体の淡黄色針状結晶を、70%の収率で得た。
実施例1において、第一の電極2上に電子輸送層3を形成した後、色素をスピンコートせず、それに代えて次のような処理をした。まず水/アセトニトリル混合溶媒(質量比1:1)中に[化17]に示す色素を濃度10mM、KClを濃度l0.1Mとなるよう溶解させた。これにより得られた溶液に、第一の電極2と電子輸送層3とを浸漬し、この状態で、第一の電極2を作用極、Pt電極を対極、Ag/AgCl電極を参照極として、作用極と対極との間に、作用極の電極電位が−0.85V(vs.Ag/AgCl)となるように電圧を印加した。これにより、電子輸送層3に光増感剤を担持した。これ以外は、実施例1と同じ方法により、光電気素子1を得た。
実施例1において、電子輸送層3を形成する際に、まず、水/アセトニトリル混合溶媒(質量比1:1)中にポリビオロゲン前駆体を0.02Mの濃度、ヨウ化ナトリウムを0.1M、[化17]に示す色素を0.02Mの濃度となるように加えた。これにより得られた溶液に第一の電極2を浸漬し、第一の電極2の電極電位を−0.75V(vs.Ag/AgCl)として電解重合を実施することで、第一の電極2上に有機化合物を堆積させた。この有機化合物を4−シアノ−1−メチル−ピリジニウム塩濃度0.02M、NaCl濃度0.1Mの水溶液中に浸漬することで、有機化合物を末端修飾した。これにより、電子輸送層3を形成した。これ以外は、実施例1と同じ方法により、光電気素子1を得た。
実施例1において、色素の種類、及び電解質溶液中の電解質の種類を、表1に示すように変更した。表中の[化18]は、上記化学式[化18]に示される色素を示す。この化学式[化18]に示す色素は、上記[化20]に示される合成スキームに従って合成した。それ以外は実施例1と同じ条件で、光電気素子1を得た。
実施例1の場合と同じ方法により、化学式J-1で表せられるポリビオロゲン前駆体を得た。このポリビオロゲン前駆体をメタノールに溶解させて溶液を調製し、この溶液をスピンコート法により第一の電極2上に塗布した。しかし、溶液は均一に成膜されなかった。
(ガルビモノマーの合成)
まず、4−ブロモ−2,6−ジ−tert−ブチルフェノール(135.8g;0.476mol)にアセトニトリル(270ml)を加え、さらに不活性雰囲気下、N,O−ビス(トリメチルシリル)アセトアミド(BSA)(106.3g;129.6ml)を加え、70℃で終夜撹拌し、完全に結晶が析出するまで反応させた。これにより析出した白色結晶を濾過し、真空乾燥した後、エタノールを用いて再結晶して精製することによって、(4−ブロモ−2,6−ジ−tert−ブチルフェノキシ)トリメチルシラン(150.0g;0.420mol)の白色板状結晶を得た。
上記ガルビモノマーの合成で得られたガルビモノマー(p−ヒドロガルビノキシルスチレン)1gと、テトラエチレングリコールジアクリレート57.7mgと、アゾビスイソブチロニトリル15.1mgを、テトラヒドロフラン2mlに溶解した後、窒素置換し、一晩還流することで、ガルビモノマーを重合させ、ガルビポリマーを得た。このガルビポリマーの数平均分子量は10000であった。
フッ素ドープ酸化スズ膜を有する厚み1mmの導電性ガラス基板(旭硝子製、10Ω/□)を用意した。このフッ素ドープ酸化スズ膜を第一の電極2とした。ガルビポリマー22.5mgをクロロホルム4.5mlに溶解して溶液を調製し、この溶液を、第一の電極2上にドロップキャストすることで、厚み100nmに成膜した。次に、過塩素酸テトラブチルアンモニウムの濃度が0.1M、リチウム−t−ブトキシ(Aldrich:CAS1907-33-1)の濃度が0.01Mであるアセトニトリル溶液中に第一の電極2を浸漬した。この状態で第一の電極2を作用極、Pt電極を対極、Ag/AgCl電極を参照極として、作用極の電極電位が1V〜1.5V(vs.Ag/AgCl)の範囲に収まるように作用極と対極との間に電圧を印加した。これにより、ガルビポリマーを電解酸化してラジカルへ誘導し、更に重合させて、第一の電極2上にガルビノキシラジカルポリマーからなる電子輸送層3を形成した。
各実施例及び比較例についての、光電流素子の開回路電圧(Voc)及び短絡電流(Jsc)の測定結果を示す。各実施例及び比較例についての、光電流素子の最大出力(Pmax)も併せて示す。
2 第一の電極
3 電子輸送層
4 正孔輸送層
5 第二の電極
6 ゲル層
Claims (10)
- 前記前駆体が、前記構造式(1)に示す構造を有する部位を1分子内に2つ有し、前記有機化合物が直鎖状の重合体である請求項1に記載の光電気素子。
- 前記前駆体が、前記構造式(1)に示す構造を有する部位を1分子内に3以上有し、前記有機化合物が架橋構造を有する請求項1に記載の光電気素子。
- 前記前駆体中の対アニオンが、臭素イオン、塩素イオン、過塩素酸イオン、ヘキサフル
オロリン酸イオン、及びテトラフルオロホウ酸イオンから選ばれるアニオンである請求項
1乃至5のいずれか一項に記載の光電気素子。 - 請求項1乃至7のいずれか一項に記載の光電気素子の製造方法であって、
前記前駆体を含む液体に前記第一の電極を浸漬した状態で前記液体と前記第一の電極とを通電させて電解重合により前記第一の電極の表面上に前記有機化合物を析出させる工程を含む光電気素子の製造方法。 - 前記前駆体を含む液体に前記光増感剤を配合し、前記前駆体と前記光増感剤を同時に電解重合する請求項8に記載の光電気素子の製造方法。
- 前記第一の電極の表面上に前記有機化合物を析出させる前記工程の後、前記光増感剤を含む液体に前記有機化合物を浸漬させることで前記光増感剤を前記有機化合物に反応させることを特徴とする請求項8に記載の光電気素子の製造方法。
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