JP5890139B2 - 描画装置およびその焦点調整方法 - Google Patents

描画装置およびその焦点調整方法 Download PDF

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Publication number
JP5890139B2
JP5890139B2 JP2011216149A JP2011216149A JP5890139B2 JP 5890139 B2 JP5890139 B2 JP 5890139B2 JP 2011216149 A JP2011216149 A JP 2011216149A JP 2011216149 A JP2011216149 A JP 2011216149A JP 5890139 B2 JP5890139 B2 JP 5890139B2
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JP
Japan
Prior art keywords
substrate
distance
unit
observation
optical system
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Active
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JP2011216149A
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English (en)
Japanese (ja)
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JP2013077677A (ja
Inventor
林　秀樹
秀樹 林
慎也 谷口
慎也 谷口
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2011216149A priority Critical patent/JP5890139B2/ja
Priority to KR1020120030304A priority patent/KR101339546B1/ko
Priority to TW101113076A priority patent/TWI488012B/zh
Publication of JP2013077677A publication Critical patent/JP2013077677A/ja
Application granted granted Critical
Publication of JP5890139B2 publication Critical patent/JP5890139B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2011216149A 2011-09-30 2011-09-30 描画装置およびその焦点調整方法 Active JP5890139B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011216149A JP5890139B2 (ja) 2011-09-30 2011-09-30 描画装置およびその焦点調整方法
KR1020120030304A KR101339546B1 (ko) 2011-09-30 2012-03-26 묘화 장치 및 그 초점 조정 방법
TW101113076A TWI488012B (zh) 2011-09-30 2012-04-12 繪圖裝置及其焦點調整方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011216149A JP5890139B2 (ja) 2011-09-30 2011-09-30 描画装置およびその焦点調整方法

Publications (2)

Publication Number Publication Date
JP2013077677A JP2013077677A (ja) 2013-04-25
JP5890139B2 true JP5890139B2 (ja) 2016-03-22

Family

ID=48437585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011216149A Active JP5890139B2 (ja) 2011-09-30 2011-09-30 描画装置およびその焦点調整方法

Country Status (3)

Country Link
JP (1) JP5890139B2 (ko)
KR (1) KR101339546B1 (ko)
TW (1) TWI488012B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050199A (ja) * 2013-08-29 2015-03-16 株式会社ピーエムティー 基準面を用いて露光対象物を高速位置決めする露光装置
JP6116456B2 (ja) * 2013-09-25 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 描画方法および描画装置
JP6351992B2 (ja) * 2014-02-17 2018-07-04 株式会社Ｓｃｒｅｅｎホールディングス 変位検出装置、基板処理装置、変位検出方法および基板処理方法
KR102413894B1 (ko) 2014-12-05 2022-06-28 가부시키가이샤 오크세이사쿠쇼 노광 장치
JP6425522B2 (ja) * 2014-12-05 2018-11-21 株式会社オーク製作所 露光装置
JP6425521B2 (ja) * 2014-12-05 2018-11-21 株式会社オーク製作所 露光装置
TWI553326B (zh) * 2015-09-30 2016-10-11 曾信得 具有光學影像放大功能的影像感測裝置及其影像感測模組
JP6506153B2 (ja) 2015-10-27 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 変位検出装置および変位検出方法ならびに基板処理装置
CN107966880B (zh) * 2017-03-15 2019-01-11 上海微电子装备（集团）股份有限公司 一种用于光刻机的垂向控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204120A (ja) * 1993-01-06 1994-07-22 Nikon Corp 焦点位置検出装置および焦点位置検出方法
JPH11274070A (ja) * 1998-03-19 1999-10-08 Nikon Corp 投影露光方法および装置
EP1231515B1 (en) * 2001-02-08 2008-11-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG125108A1 (en) * 2003-03-11 2006-09-29 Asml Netherlands Bv Assembly comprising a sensor for determining at least one of tilt and height of a substrate, a method therefor and a lithographic projection apparatus
JP2005311057A (ja) * 2004-04-21 2005-11-04 Sharp Corp 露光装置
JP4752286B2 (ja) * 2004-12-28 2011-08-17 株式会社ニコン 位置調整装置の制御方法、位置調整装置、及び露光装置
JP2008071839A (ja) * 2006-09-12 2008-03-27 Canon Inc 表面位置検出方法、露光装置及びデバイスの製造方法
NL1036558A1 (nl) 2008-03-25 2009-09-28 Asml Netherlands Bv Method and lithographic apparatus for acquiring height data relating to a substrate surface.
JP5205101B2 (ja) * 2008-03-28 2013-06-05 大日本スクリーン製造株式会社 パターン描画装置およびパターン描画方法
JP2010243815A (ja) * 2009-04-07 2010-10-28 Lasertec Corp 焦点検出機構及び焦点検出方法
JP2011035333A (ja) 2009-08-05 2011-02-17 Renesas Electronics Corp 走査型露光装置、走査型露光方法、半導体装置の製造方法およびプログラム
KR20110087401A (ko) * 2010-01-26 2011-08-03 삼성전자주식회사 마스크리스 노광장치의 오토 포커싱 장치 및 오토 포커싱 방법

Also Published As

Publication number Publication date
TW201314386A (zh) 2013-04-01
KR20130035848A (ko) 2013-04-09
KR101339546B1 (ko) 2013-12-10
JP2013077677A (ja) 2013-04-25
TWI488012B (zh) 2015-06-11

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