JP5883022B2 - 銅及びインジウムを含む合金スパッタターゲットの修復 - Google Patents

銅及びインジウムを含む合金スパッタターゲットの修復 Download PDF

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Publication number
JP5883022B2
JP5883022B2 JP2013541991A JP2013541991A JP5883022B2 JP 5883022 B2 JP5883022 B2 JP 5883022B2 JP 2013541991 A JP2013541991 A JP 2013541991A JP 2013541991 A JP2013541991 A JP 2013541991A JP 5883022 B2 JP5883022 B2 JP 5883022B2
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JP
Japan
Prior art keywords
target
indium
powder
copper
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013541991A
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English (en)
Japanese (ja)
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JP2014503687A (ja
JP2014503687A5 (enExample
Inventor
イー．ガービ ジェニファー
イー．ガービ ジェニファー
ティー．ニルソン ロバート
ティー．ニルソン ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
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Dow Global Technologies LLC
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Publication date
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Publication of JP2014503687A publication Critical patent/JP2014503687A/ja
Publication of JP2014503687A5 publication Critical patent/JP2014503687A5/ja
Application granted granted Critical
Publication of JP5883022B2 publication Critical patent/JP5883022B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Photovoltaic Devices (AREA)
JP2013541991A 2010-11-30 2011-10-13 銅及びインジウムを含む合金スパッタターゲットの修復 Expired - Fee Related JP5883022B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41805110P 2010-11-30 2010-11-30
US61/418,051 2010-11-30
PCT/US2011/056058 WO2012074609A1 (en) 2010-11-30 2011-10-13 Refurbishing copper and indium containing alloy sputter targets

Publications (3)

Publication Number Publication Date
JP2014503687A JP2014503687A (ja) 2014-02-13
JP2014503687A5 JP2014503687A5 (enExample) 2014-12-04
JP5883022B2 true JP5883022B2 (ja) 2016-03-09

Family

ID=44908097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013541991A Expired - Fee Related JP5883022B2 (ja) 2010-11-30 2011-10-13 銅及びインジウムを含む合金スパッタターゲットの修復

Country Status (5)

Country Link
US (1) US9399816B2 (enExample)
EP (1) EP2646593A1 (enExample)
JP (1) JP5883022B2 (enExample)
CN (1) CN103228815B (enExample)
WO (1) WO2012074609A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets
JP5746252B2 (ja) * 2013-03-28 2015-07-08 光洋應用材料科技股▲分▼有限公司 正方晶系結晶構造を有するインジウムターゲット
JP6798852B2 (ja) 2015-10-26 2020-12-09 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
CN107626929B (zh) * 2017-08-04 2021-04-30 领凡新能源科技(北京)有限公司 一种制备合金粉末的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270733A (ja) * 1997-01-24 1998-10-09 Asahi Chem Ind Co Ltd ｐ型半導体、ｐ型半導体の製造方法、光起電力素子、発光素子
KR100617402B1 (ko) * 2001-09-17 2006-09-01 헤래우스 인코포레이티드 사용된 스퍼터링 타깃을 보수하는 방법 및 보수된 스퍼터타깃
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
CN1772467A (zh) * 2005-11-09 2006-05-17 浙江大学 一种简易等静压装置及其应用
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
US20080105542A1 (en) 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
DE102006055662B3 (de) 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
US7871563B2 (en) * 2007-07-17 2011-01-18 Williams Advanced Materials, Inc. Process for the refurbishing of a sputtering target
JP4957969B2 (ja) * 2007-11-12 2012-06-20 三菱マテリアル株式会社 Ｃｕ−Ｉｎ−Ｇａ三元系焼結合金スパッタリングターゲットの製造方法
TWI397600B (zh) * 2009-01-07 2013-06-01 Solar Applied Mat Tech Corp Recycled sputtering target and its making method

Also Published As

Publication number Publication date
JP2014503687A (ja) 2014-02-13
CN103228815A (zh) 2013-07-31
US20130248351A1 (en) 2013-09-26
EP2646593A1 (en) 2013-10-09
WO2012074609A1 (en) 2012-06-07
CN103228815B (zh) 2016-08-17
US9399816B2 (en) 2016-07-26

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