CN103228815B - 翻新含有铜和铟的合金溅射靶 - Google Patents

翻新含有铜和铟的合金溅射靶 Download PDF

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Publication number
CN103228815B
CN103228815B CN201180057520.0A CN201180057520A CN103228815B CN 103228815 B CN103228815 B CN 103228815B CN 201180057520 A CN201180057520 A CN 201180057520A CN 103228815 B CN103228815 B CN 103228815B
Authority
CN
China
Prior art keywords
target
powder
indium
copper
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180057520.0A
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English (en)
Chinese (zh)
Other versions
CN103228815A (zh
Inventor
G·E·盖尔比
R·T·尼尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
Original Assignee
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN103228815A publication Critical patent/CN103228815A/zh
Application granted granted Critical
Publication of CN103228815B publication Critical patent/CN103228815B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
CN201180057520.0A 2010-11-30 2011-10-13 翻新含有铜和铟的合金溅射靶 Expired - Fee Related CN103228815B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41805110P 2010-11-30 2010-11-30
US61/418,051 2010-11-30
PCT/US2011/056058 WO2012074609A1 (en) 2010-11-30 2011-10-13 Refurbishing copper and indium containing alloy sputter targets

Publications (2)

Publication Number Publication Date
CN103228815A CN103228815A (zh) 2013-07-31
CN103228815B true CN103228815B (zh) 2016-08-17

Family

ID=44908097

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180057520.0A Expired - Fee Related CN103228815B (zh) 2010-11-30 2011-10-13 翻新含有铜和铟的合金溅射靶

Country Status (5)

Country Link
US (1) US9399816B2 (enExample)
EP (1) EP2646593A1 (enExample)
JP (1) JP5883022B2 (enExample)
CN (1) CN103228815B (enExample)
WO (1) WO2012074609A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8734896B2 (en) 2011-09-29 2014-05-27 H.C. Starck Inc. Methods of manufacturing high-strength large-area sputtering targets
JP5746252B2 (ja) * 2013-03-28 2015-07-08 光洋應用材料科技股▲分▼有限公司 正方晶系結晶構造を有するインジウムターゲット
JP6798852B2 (ja) 2015-10-26 2020-12-09 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
CN107626929B (zh) * 2017-08-04 2021-04-30 领凡新能源科技(北京)有限公司 一种制备合金粉末的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0955680A1 (en) * 1997-01-24 1999-11-10 Asahi Kasei Kogyo Kabushiki Kaisha p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
CN1772467A (zh) * 2005-11-09 2006-05-17 浙江大学 一种简易等静压装置及其应用
US20090022616A1 (en) * 2007-07-17 2009-01-22 Robert Acker Process for the refurbishing of a sputtering target
US20090277777A1 (en) * 2006-06-01 2009-11-12 W.C. Heraeus Gmbh Cold-pressed sputter targets
US20100170786A1 (en) * 2009-01-07 2010-07-08 Solar Applied Materials Technology Corp. Refurbished sputtering target and method for making the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005508444A (ja) * 2001-09-17 2005-03-31 ヘラエウス インコーポレーテッド 使用済みスパッタターゲットの再生
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US20080105542A1 (en) 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
DE102006055662B3 (de) 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
JP4957969B2 (ja) * 2007-11-12 2012-06-20 三菱マテリアル株式会社 Ｃｕ−Ｉｎ−Ｇａ三元系焼結合金スパッタリングターゲットの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0955680A1 (en) * 1997-01-24 1999-11-10 Asahi Kasei Kogyo Kabushiki Kaisha p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
CN1772467A (zh) * 2005-11-09 2006-05-17 浙江大学 一种简易等静压装置及其应用
US20090277777A1 (en) * 2006-06-01 2009-11-12 W.C. Heraeus Gmbh Cold-pressed sputter targets
US20090022616A1 (en) * 2007-07-17 2009-01-22 Robert Acker Process for the refurbishing of a sputtering target
US20100170786A1 (en) * 2009-01-07 2010-07-08 Solar Applied Materials Technology Corp. Refurbished sputtering target and method for making the same

Also Published As

Publication number Publication date
JP5883022B2 (ja) 2016-03-09
EP2646593A1 (en) 2013-10-09
CN103228815A (zh) 2013-07-31
US20130248351A1 (en) 2013-09-26
WO2012074609A1 (en) 2012-06-07
JP2014503687A (ja) 2014-02-13
US9399816B2 (en) 2016-07-26

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Granted publication date: 20160817

Termination date: 20191013

CF01 Termination of patent right due to non-payment of annual fee