JP2014503687A5 - - Google Patents
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- Publication number
- JP2014503687A5 JP2014503687A5 JP2013541991A JP2013541991A JP2014503687A5 JP 2014503687 A5 JP2014503687 A5 JP 2014503687A5 JP 2013541991 A JP2013541991 A JP 2013541991A JP 2013541991 A JP2013541991 A JP 2013541991A JP 2014503687 A5 JP2014503687 A5 JP 2014503687A5
- Authority
- JP
- Japan
- Prior art keywords
- target
- indium
- copper
- powder
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- 238000009694 cold isostatic pressing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41805110P | 2010-11-30 | 2010-11-30 | |
| US61/418,051 | 2010-11-30 | ||
| PCT/US2011/056058 WO2012074609A1 (en) | 2010-11-30 | 2011-10-13 | Refurbishing copper and indium containing alloy sputter targets |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014503687A JP2014503687A (ja) | 2014-02-13 |
| JP2014503687A5 true JP2014503687A5 (enExample) | 2014-12-04 |
| JP5883022B2 JP5883022B2 (ja) | 2016-03-09 |
Family
ID=44908097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013541991A Expired - Fee Related JP5883022B2 (ja) | 2010-11-30 | 2011-10-13 | 銅及びインジウムを含む合金スパッタターゲットの修復 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9399816B2 (enExample) |
| EP (1) | EP2646593A1 (enExample) |
| JP (1) | JP5883022B2 (enExample) |
| CN (1) | CN103228815B (enExample) |
| WO (1) | WO2012074609A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US8734896B2 (en) | 2011-09-29 | 2014-05-27 | H.C. Starck Inc. | Methods of manufacturing high-strength large-area sputtering targets |
| JP5746252B2 (ja) * | 2013-03-28 | 2015-07-08 | 光洋應用材料科技股▲分▼有限公司 | 正方晶系結晶構造を有するインジウムターゲット |
| JP6798852B2 (ja) | 2015-10-26 | 2020-12-09 | 三菱マテリアル株式会社 | スパッタリングターゲット及びスパッタリングターゲットの製造方法 |
| CN107626929B (zh) * | 2017-08-04 | 2021-04-30 | 领凡新能源科技(北京)有限公司 | 一种制备合金粉末的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270733A (ja) * | 1997-01-24 | 1998-10-09 | Asahi Chem Ind Co Ltd | ｐ型半導体、ｐ型半導体の製造方法、光起電力素子、発光素子 |
| KR100617402B1 (ko) * | 2001-09-17 | 2006-09-01 | 헤래우스 인코포레이티드 | 사용된 스퍼터링 타깃을 보수하는 방법 및 보수된 스퍼터타깃 |
| US7504008B2 (en) * | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
| CN1772467A (zh) * | 2005-11-09 | 2006-05-17 | 浙江大学 | 一种简易等静压装置及其应用 |
| DE102006026005A1 (de) * | 2006-06-01 | 2007-12-06 | W.C. Heraeus Gmbh | Kaltgepresste Sputtertargets |
| US20080105542A1 (en) | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
| DE102006055662B3 (de) | 2006-11-23 | 2008-06-26 | Gfe Metalle Und Materialien Gmbh | Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen |
| US7871563B2 (en) * | 2007-07-17 | 2011-01-18 | Williams Advanced Materials, Inc. | Process for the refurbishing of a sputtering target |
| JP4957969B2 (ja) * | 2007-11-12 | 2012-06-20 | 三菱マテリアル株式会社 | Ｃｕ−Ｉｎ−Ｇａ三元系焼結合金スパッタリングターゲットの製造方法 |
| TWI397600B (zh) * | 2009-01-07 | 2013-06-01 | Solar Applied Mat Tech Corp | Recycled sputtering target and its making method |
-
2011
- 2011-10-13 EP EP11779269.7A patent/EP2646593A1/en not_active Withdrawn
- 2011-10-13 CN CN201180057520.0A patent/CN103228815B/zh not_active Expired - Fee Related
- 2011-10-13 JP JP2013541991A patent/JP5883022B2/ja not_active Expired - Fee Related
- 2011-10-13 US US13/988,621 patent/US9399816B2/en not_active Expired - Fee Related
- 2011-10-13 WO PCT/US2011/056058 patent/WO2012074609A1/en not_active Ceased
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