JP5882577B2 - フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 - Google Patents
フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 Download PDFInfo
- Publication number
- JP5882577B2 JP5882577B2 JP2010271893A JP2010271893A JP5882577B2 JP 5882577 B2 JP5882577 B2 JP 5882577B2 JP 2010271893 A JP2010271893 A JP 2010271893A JP 2010271893 A JP2010271893 A JP 2010271893A JP 5882577 B2 JP5882577 B2 JP 5882577B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid adhesive
- frame member
- grinding
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 169
- 238000000227 grinding Methods 0.000 title claims description 104
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000853 adhesive Substances 0.000 claims description 206
- 230000001070 adhesive effect Effects 0.000 claims description 206
- 239000007788 liquid Substances 0.000 claims description 158
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 238000003892 spreading Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 58
- 239000010410 layer Substances 0.000 description 33
- 238000005520 cutting process Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000004831 Hot glue Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
図1及び図2は、本発明の一実施形態によるフィルム貼付方法を適用する構成要素群を示す図、図3は、図1及び図2の構成要素群を示す断面図であって、本発明の一実施形態による裏面研削方法の主要ステップと共に示す図、図4は、本発明の一実施形態によるフィルム貼付方法の主要ステップを模式図的に示す図である。
10a 第1面(回路面)
10b 第2面(裏面)
12 フィルム
12a 表面
12b 裏面
14 フレーム部材
16 液状接着剤
18、22 接合層
20 テーブル
26 加工面
28 フレーム支持部
34 フィルム支持部
40 チップ
Claims (6)
- フィルム貼付方法であって、
第1面及び該第1面の反対側の第2面を有する物体と、該物体の該第1面よりも大きな表面を有し、可撓性を有するフィルムと、該フィルムの外周縁に沿って配置可能な形状及び寸法を有し、該フィルムよりも高い剛性を有するフレーム部材と、液状接着剤とを用意するステップと、
前記物体の前記第1面又は前記フィルムの前記表面に前記液状接着剤を配置するステップと、
前記フィルムの前記外周縁に沿って前記フレーム部材を固定するステップと、
前記物体と前記フィルムとを、前記第1面と前記表面とが互いに対向するとともに前記フィルムの前記外周縁に沿った領域が前記物体の外側に張り出す相対位置に配置して、前記第1面と前記表面との双方を前記液状接着剤に接触させるステップと、
前記第1面と前記表面との双方を前記液状接着剤に接触させた状態で、前記フレーム部材を前記物体に対して固定的に支持しながら前記物体と前記フィルムとを同軸配置で回転させて、前記第1面と前記表面との間に前記液状接着剤を行き渡らせるステップと、
前記液状接着剤を固化させて、前記物体の前記第1面に前記フィルムを固着させるステップと、
を含むフィルム貼付方法。 - 前記フレーム部材を固定するステップは、前記フィルムに張力を加えた状態で前記外周縁に沿って前記フレーム部材を固定するステップを含む、請求項1に記載のフィルム貼付方法。
- フィルム貼付方法であって、
第1面及び該第1面の反対側の第2面を有する物体と、可撓性を有するフィルムと、液状接着剤とを用意するステップと、
前記物体の前記第1面又は前記フィルムの表面に前記液状接着剤を配置するステップと、
前記物体と前記フィルムとを、前記第1面と前記表面とが互いに対向する相対位置に配置して、前記第1面と前記表面との双方を前記液状接着剤に接触させるステップと、
前記第1面と前記表面との双方を前記液状接着剤に接触させた状態で、前記フィルムを前記物体に対して固定的に支持しながら前記物体と前記フィルムとを同軸配置で回転させて、前記第1面と前記表面との間に前記液状接着剤を行き渡らせるステップと、
前記液状接着剤を固化させて、前記物体の前記第1面に前記フィルムを固着させるステップと、
を含むフィルム貼付方法。 - 裏面研削方法であって、
請求項1に記載のフィルム貼付方法によって前記物体の前記第1面に前記フィルムを固着させるステップと、
前記第1面に前記フィルムを固着させた前記物体を前記フレーム部材の内側で固定的に支持した状態で、前記第2面を研削するステップと、
を含む裏面研削方法。 - 半導体チップの作製方法であって、
請求項4に記載の裏面研削方法によって、前記第1面が回路面であるウエハからなる前記物体の前記第2面を研削するステップを含む、
作製方法。 - 請求項1に記載のフィルム貼付方法を実施するためのフィルム貼付装置であって、
前記第1面と前記表面との双方を前記液状接着剤に接触させた状態で、前記フレーム部材を前記物体に対して固定的に支持するフレーム支持部と、
前記フレーム支持部が前記フレーム部材を前記物体に対して固定的に支持した状態で、前記物体と前記フィルムとを同軸配置で回転させる駆動部と、
を具備するフィルム貼付装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010271893A JP5882577B2 (ja) | 2010-12-06 | 2010-12-06 | フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 |
PCT/US2011/062523 WO2012078419A2 (en) | 2010-12-06 | 2011-11-30 | Method for applying film, method for grinding back surface, method for forming semiconductor chip, and apparatus for applying film |
TW100144687A TWI564949B (zh) | 2010-12-06 | 2011-12-05 | 塗佈膜之方法,研磨背表面之方法,形成半導體晶片之方法及塗佈膜之裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010271893A JP5882577B2 (ja) | 2010-12-06 | 2010-12-06 | フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012124230A JP2012124230A (ja) | 2012-06-28 |
JP2012124230A5 JP2012124230A5 (ja) | 2014-01-30 |
JP5882577B2 true JP5882577B2 (ja) | 2016-03-09 |
Family
ID=46207653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010271893A Active JP5882577B2 (ja) | 2010-12-06 | 2010-12-06 | フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5882577B2 (ja) |
TW (1) | TWI564949B (ja) |
WO (1) | WO2012078419A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4156238A3 (en) * | 2021-09-24 | 2023-04-19 | Disco Corporation | Method of processing plate-shaped workpiece |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112014000276B4 (de) | 2013-02-19 | 2022-03-31 | Sumco Corporation | Verfahren zum Prozessieren von Halbleiterwafern |
JP6149223B2 (ja) * | 2013-04-18 | 2017-06-21 | 株式会社ディスコ | 板状物の貼着方法 |
JP6322472B2 (ja) * | 2014-05-01 | 2018-05-09 | スリーエム イノベイティブ プロパティズ カンパニー | シート貼付方法、シート貼付装置及びウエハ加工方法 |
CN110211913A (zh) * | 2019-05-29 | 2019-09-06 | 浙江荷清柔性电子技术有限公司 | 一种柔性芯片的制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3602943B2 (ja) * | 1997-07-25 | 2004-12-15 | シャープ株式会社 | 半導体ウエハの研削装置 |
JPH1153778A (ja) * | 1997-08-07 | 1999-02-26 | Matsushita Electric Ind Co Ltd | 光ディスク装置の製造方法およびその製造装置 |
JP2005191535A (ja) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 貼り付け装置および貼り付け方法 |
JP4485248B2 (ja) * | 2004-04-28 | 2010-06-16 | リンテック株式会社 | 剥離装置及び剥離方法 |
KR100843217B1 (ko) * | 2006-12-15 | 2008-07-02 | 삼성전자주식회사 | 웨이퍼 후면 액상접착제 도포를 이용한 반도체 패키지 제조용 인라인 시스템 |
JP2009147201A (ja) * | 2007-12-17 | 2009-07-02 | Denki Kagaku Kogyo Kk | ダイシングシート、その製造方法、および電子部品の製造方法 |
JP2009231699A (ja) * | 2008-03-25 | 2009-10-08 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
TWM359789U (en) * | 2008-07-21 | 2009-06-21 | Beautrong Prec Mechtronics Co Ltd | A blue membrane expansion device |
JP5492445B2 (ja) * | 2009-04-23 | 2014-05-14 | 株式会社ディスコ | ウェーハの分割方法 |
-
2010
- 2010-12-06 JP JP2010271893A patent/JP5882577B2/ja active Active
-
2011
- 2011-11-30 WO PCT/US2011/062523 patent/WO2012078419A2/en active Application Filing
- 2011-12-05 TW TW100144687A patent/TWI564949B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4156238A3 (en) * | 2021-09-24 | 2023-04-19 | Disco Corporation | Method of processing plate-shaped workpiece |
Also Published As
Publication number | Publication date |
---|---|
TW201246341A (en) | 2012-11-16 |
WO2012078419A2 (en) | 2012-06-14 |
TWI564949B (zh) | 2017-01-01 |
WO2012078419A3 (en) | 2012-08-02 |
JP2012124230A (ja) | 2012-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4613709B2 (ja) | 半導体装置の製造方法 | |
JP5882577B2 (ja) | フィルム貼付方法、裏面研削方法、半導体チップ作製方法及びフィルム貼付装置 | |
KR20060120113A (ko) | 표면보호용 시트 및 반도체 웨이퍼의 연삭방법 | |
JPWO2003049164A1 (ja) | 半導体チップの製造方法 | |
JP2014067970A (ja) | 表面保護部材および加工方法 | |
KR20130009878A (ko) | 제작 기판을 캐리어 기판으로부터 분리하기 위한 장치 및 방법 | |
TW200411755A (en) | Method of processing a semiconductor wafer | |
KR102061369B1 (ko) | 제품 기판을 캐리어 기판에 임시로 결합하기 위한 방법 | |
JP2011023659A (ja) | ウェーハの加工方法 | |
KR102535477B1 (ko) | 다이본드 다이싱 시트 | |
JP2010027685A (ja) | 半導体ウエハの研削方法 | |
JP2010027686A (ja) | 表面保護用シートおよび半導体ウエハの研削方法 | |
JP2009152493A (ja) | 半導体装置の製造方法 | |
JP2011119767A (ja) | ウエハのダイシング方法、実装方法、接着剤層付きチップの製造方法、実装体 | |
JP6021687B2 (ja) | 積層ウェーハの加工方法 | |
JP2012084916A (ja) | ダイシング−ダイボンディングテープ及び粘接着剤層付き半導体チップの製造方法 | |
JP2012138402A (ja) | ウエハマウント作製方法 | |
JP2013149919A (ja) | 部材剥離方法及び部材剥離装置並びに半導体チップ製造方法 | |
JP2010192510A (ja) | ワークの移載方法および移載装置 | |
JP2013060489A (ja) | 部材剥離方法及び部材剥離装置 | |
JP2014124626A (ja) | 被膜形成方法、被膜形成装置及び半導体チップの作製方法 | |
JP2007281415A (ja) | 接着シート | |
JP2013254819A (ja) | フィルム貼付方法及びフィルム貼付装置 | |
JP6132502B2 (ja) | ウェーハの加工方法 | |
JP2011155099A (ja) | シート貼付装置およびシート貼付方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131206 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150406 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5882577 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |