JP5861557B2 - 検査装置 - Google Patents

検査装置 Download PDF

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Publication number
JP5861557B2
JP5861557B2 JP2012101421A JP2012101421A JP5861557B2 JP 5861557 B2 JP5861557 B2 JP 5861557B2 JP 2012101421 A JP2012101421 A JP 2012101421A JP 2012101421 A JP2012101421 A JP 2012101421A JP 5861557 B2 JP5861557 B2 JP 5861557B2
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JP
Japan
Prior art keywords
probe
inspection apparatus
heater
heat
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012101421A
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English (en)
Japanese (ja)
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JP2013229496A5 (enExample
JP2013229496A (ja
Inventor
岡田　章
章 岡田
肇 秋山
肇 秋山
欽也 山下
欽也 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012101421A priority Critical patent/JP5861557B2/ja
Priority to US13/741,195 priority patent/US9188624B2/en
Priority to CN201310093674.6A priority patent/CN103379682B/zh
Publication of JP2013229496A publication Critical patent/JP2013229496A/ja
Publication of JP2013229496A5 publication Critical patent/JP2013229496A5/ja
Application granted granted Critical
Publication of JP5861557B2 publication Critical patent/JP5861557B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
JP2012101421A 2012-04-26 2012-04-26 検査装置 Expired - Fee Related JP5861557B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012101421A JP5861557B2 (ja) 2012-04-26 2012-04-26 検査装置
US13/741,195 US9188624B2 (en) 2012-04-26 2013-01-14 Inspection apparatus
CN201310093674.6A CN103379682B (zh) 2012-04-26 2013-03-22 检查装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012101421A JP5861557B2 (ja) 2012-04-26 2012-04-26 検査装置

Publications (3)

Publication Number Publication Date
JP2013229496A JP2013229496A (ja) 2013-11-07
JP2013229496A5 JP2013229496A5 (enExample) 2014-09-18
JP5861557B2 true JP5861557B2 (ja) 2016-02-16

Family

ID=49464099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012101421A Expired - Fee Related JP5861557B2 (ja) 2012-04-26 2012-04-26 検査装置

Country Status (3)

Country Link
US (1) US9188624B2 (enExample)
JP (1) JP5861557B2 (enExample)
CN (1) CN103379682B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016138898A (ja) * 2016-04-21 2016-08-04 三菱電機株式会社 検査装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213382B2 (ja) * 2014-06-04 2017-10-18 三菱電機株式会社 測定装置
JP6418118B2 (ja) * 2015-09-24 2018-11-07 三菱電機株式会社 半導体装置の評価装置及び評価方法
US10001508B2 (en) * 2016-06-17 2018-06-19 International Business Machines Corporation Integrated self-coining probe
JP6575663B2 (ja) * 2018-10-24 2019-09-18 株式会社東京精密 プローブカード型温度センサ及びウエハチャック温度測定方法
CN110824339A (zh) * 2019-10-22 2020-02-21 苏州盛科科技有限公司 一种交换芯片老化筛选测试的恒温控制装置及方法
US11578925B2 (en) * 2019-11-15 2023-02-14 Tektronix, Inc. Thermal management system for a test-and-measurement probe
US12332277B1 (en) 2019-11-15 2025-06-17 Tektronix, Inc. Thermal management system for a test-and-measurement probe
JP7455015B2 (ja) * 2020-07-14 2024-03-25 東京エレクトロン株式会社 検査装置
CN214335132U (zh) * 2021-01-13 2021-10-01 迪科特测试科技(苏州)有限公司 探测系统及探测装置
CN116345250A (zh) * 2023-05-04 2023-06-27 昆山联滔电子有限公司 弹簧针模组及弹簧针温度控制方法
CN117250468B (zh) * 2023-11-17 2024-01-26 福建福碳新材料科技有限公司 一种三代半导体用等静压石墨衬底检验台

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318971A (en) * 1976-08-06 1978-02-21 Hitachi Ltd Multisensor of wafer prober
JPH02192749A (ja) * 1989-01-20 1990-07-30 Mitsubishi Electric Corp 耐熱型プローブカード
JPH03158764A (ja) * 1989-11-16 1991-07-08 Sumitomo Electric Ind Ltd プローブ装置
JPH0477674A (ja) * 1990-07-19 1992-03-11 Nec Corp プローブ
EP0538010A3 (en) 1991-10-17 1993-05-19 Fujitsu Limited Semiconductor package, a holder, a method of production and testing for the same
JPH06349909A (ja) * 1993-06-14 1994-12-22 Hitachi Ltd プローブ検査装置
JPH1056045A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 電子素子評価装置
JP2000138268A (ja) 1998-11-04 2000-05-16 Hitachi Chem Co Ltd 半導体回路の検査方法及び検査装置
JP2001033484A (ja) 1999-07-15 2001-02-09 Ibiden Co Ltd ウエハプローバ
JP2002022768A (ja) 2000-07-10 2002-01-23 Nec Eng Ltd 集積回路パッケージ検査用ポゴピン
DE10230196A1 (de) * 2002-07-05 2004-01-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hochauflösender NMR-Probenkopf für geringe Probenvolumina sowie Verfahren zum Betrieb
JP2004227842A (ja) 2003-01-21 2004-08-12 Canon Inc プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法
JP2005164537A (ja) 2003-12-05 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置の検査装置
JP4286182B2 (ja) * 2004-05-13 2009-06-24 富士通マイクロエレクトロニクス株式会社 電気的接続方法
JP4610289B2 (ja) * 2004-10-07 2011-01-12 日本電子材料株式会社 プローブ装置
DE102006020774B3 (de) * 2006-05-03 2008-02-07 Bruker Biospin Ag Gekühlter, kuppelbarer NMR-Probenkopf
JP2008103528A (ja) * 2006-10-19 2008-05-01 Matsushita Electric Ind Co Ltd 半導体装置の検査方法およびプローブカード
JP2008128838A (ja) * 2006-11-21 2008-06-05 Shinko Electric Ind Co Ltd プローブ装置
JP5021373B2 (ja) 2007-06-06 2012-09-05 株式会社日立ハイテクノロジーズ 検査装置、検査方法及び検査装置に用いるプローブユニット
JP4999615B2 (ja) * 2007-08-31 2012-08-15 東京エレクトロン株式会社 検査装置及び検査方法
JP5074878B2 (ja) * 2007-10-15 2012-11-14 東京エレクトロン株式会社 検査装置
JP2010169417A (ja) * 2009-01-20 2010-08-05 Denso Corp 検査用プローブ及びプリント基板検査装置
JP2011007671A (ja) * 2009-06-26 2011-01-13 Fujitsu Semiconductor Ltd 試験装置
JP2012021223A (ja) 2010-07-14 2012-02-02 Plasma Ion Assist Co Ltd プラズマ処理装置及びコンタクトプローブの表面改質方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016138898A (ja) * 2016-04-21 2016-08-04 三菱電機株式会社 検査装置

Also Published As

Publication number Publication date
JP2013229496A (ja) 2013-11-07
US20130285684A1 (en) 2013-10-31
CN103379682B (zh) 2016-02-24
CN103379682A (zh) 2013-10-30
US9188624B2 (en) 2015-11-17

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