JP5859566B2 - 多数のカメラを用いる結晶の成長特性計測方法 - Google Patents

多数のカメラを用いる結晶の成長特性計測方法 Download PDF

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JP5859566B2
JP5859566B2 JP2013546814A JP2013546814A JP5859566B2 JP 5859566 B2 JP5859566 B2 JP 5859566B2 JP 2013546814 A JP2013546814 A JP 2013546814A JP 2013546814 A JP2013546814 A JP 2013546814A JP 5859566 B2 JP5859566 B2 JP 5859566B2
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crystal
camera
image
error value
mathematical model
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JP2014501220A (ja
JP2014501220A5 (enExample
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スティーブン・エル・キンベル
ロバート・エイチ・フューアホフ
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SunEdison Inc
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SunEdison Inc
MEMC Electronic Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2013546814A 2010-12-30 2011-12-28 多数のカメラを用いる結晶の成長特性計測方法 Active JP5859566B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061428339P 2010-12-30 2010-12-30
US61/428,339 2010-12-30
PCT/IB2011/055994 WO2012090172A1 (en) 2010-12-30 2011-12-28 Measuring a crystal growth feature using multiple cameras

Publications (3)

Publication Number Publication Date
JP2014501220A JP2014501220A (ja) 2014-01-20
JP2014501220A5 JP2014501220A5 (enExample) 2015-02-19
JP5859566B2 true JP5859566B2 (ja) 2016-02-10

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JP2013546814A Active JP5859566B2 (ja) 2010-12-30 2011-12-28 多数のカメラを用いる結晶の成長特性計測方法

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EP (1) EP2659031B1 (enExample)
JP (1) JP5859566B2 (enExample)
KR (1) KR101774625B1 (enExample)
CN (1) CN103403233B (enExample)
WO (1) WO2012090172A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103575734B (zh) * 2013-11-22 2016-06-08 晶格码（青岛）智能科技有限公司 晶体三维晶面生长动力学的立体成像测定系统及方法
CN107818559B (zh) * 2017-09-22 2021-08-20 太原理工大学 晶体接种状态检测方法和晶体接种状态图像的采集装置
DE102019101991A1 (de) * 2019-01-28 2020-07-30 Pva Tepla Ag Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
CN110004492B (zh) * 2019-04-25 2020-06-09 苏州新美光纳米科技有限公司 长晶炉内监测方法及长晶炉
CN110983432B (zh) * 2019-12-25 2021-04-06 南京晶升能源设备有限公司 一种半导体硅材料晶体生长的图像识别控制方法
CN113355741A (zh) * 2020-03-06 2021-09-07 内蒙古中环光伏材料有限公司 一种直拉单晶引晶工艺及用于该引晶工艺的单晶炉
AT524604B1 (de) 2020-12-29 2025-01-15 Fametec Gmbh Verfahren zur Mitverfolgung des Kristallwachstums eines Einkristalls
KR102681152B1 (ko) * 2021-05-28 2024-07-03 (주)셀릭 단결정 잉곳 제조용 멜트 갭 유지장치 및 그를 이용한 멜트 갭 유지방법
CN115727775B (zh) * 2021-08-31 2026-04-24 内蒙古中环晶体材料有限公司 一种单晶等径变形检测方法及装置
CN114481303A (zh) * 2022-01-12 2022-05-13 苏州天准科技股份有限公司 一种拉晶状态监测装置及拉晶设备
CN118727129A (zh) * 2024-06-11 2024-10-01 眉山博雅新材料股份有限公司 一种单晶生长状态可视化的方法、系统和存储介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
DE19738438B4 (de) * 1997-09-03 2010-04-08 Crystal Growing Systems Gmbh Einrichtung und Verfahren für die Bestimmung des Durchmessers eines Kristalls
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
JP2004035352A (ja) * 2002-07-05 2004-02-05 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
JP5109928B2 (ja) * 2008-10-21 2012-12-26 信越半導体株式会社 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置

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Publication number Publication date
WO2012090172A1 (en) 2012-07-05
JP2014501220A (ja) 2014-01-20
CN103403233A (zh) 2013-11-20
EP2659031B1 (en) 2015-02-18
EP2659031A1 (en) 2013-11-06
KR20130133261A (ko) 2013-12-06
KR101774625B1 (ko) 2017-09-04
CN103403233B (zh) 2016-01-20

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