JP5859566B2 - 多数のカメラを用いる結晶の成長特性計測方法 - Google Patents

多数のカメラを用いる結晶の成長特性計測方法 Download PDF

Info

Publication number
JP5859566B2
JP5859566B2 JP2013546814A JP2013546814A JP5859566B2 JP 5859566 B2 JP5859566 B2 JP 5859566B2 JP 2013546814 A JP2013546814 A JP 2013546814A JP 2013546814 A JP2013546814 A JP 2013546814A JP 5859566 B2 JP5859566 B2 JP 5859566B2
Authority
JP
Japan
Prior art keywords
crystal
camera
image
error value
mathematical model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013546814A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014501220A (ja
JP2014501220A5 (enExample
Inventor
スティーブン・エル・キンベル
ロバート・エイチ・フューアホフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
MEMC Electronic Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc, MEMC Electronic Materials Inc filed Critical SunEdison Inc
Publication of JP2014501220A publication Critical patent/JP2014501220A/ja
Publication of JP2014501220A5 publication Critical patent/JP2014501220A5/ja
Application granted granted Critical
Publication of JP5859566B2 publication Critical patent/JP5859566B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2013546814A 2010-12-30 2011-12-28 多数のカメラを用いる結晶の成長特性計測方法 Active JP5859566B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061428339P 2010-12-30 2010-12-30
US61/428,339 2010-12-30
PCT/IB2011/055994 WO2012090172A1 (en) 2010-12-30 2011-12-28 Measuring a crystal growth feature using multiple cameras

Publications (3)

Publication Number Publication Date
JP2014501220A JP2014501220A (ja) 2014-01-20
JP2014501220A5 JP2014501220A5 (enExample) 2015-02-19
JP5859566B2 true JP5859566B2 (ja) 2016-02-10

Family

ID=45688190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013546814A Active JP5859566B2 (ja) 2010-12-30 2011-12-28 多数のカメラを用いる結晶の成長特性計測方法

Country Status (5)

Country Link
EP (1) EP2659031B1 (enExample)
JP (1) JP5859566B2 (enExample)
KR (1) KR101774625B1 (enExample)
CN (1) CN103403233B (enExample)
WO (1) WO2012090172A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103575734B (zh) * 2013-11-22 2016-06-08 晶格码（青岛）智能科技有限公司 晶体三维晶面生长动力学的立体成像测定系统及方法
CN107818559B (zh) * 2017-09-22 2021-08-20 太原理工大学 晶体接种状态检测方法和晶体接种状态图像的采集装置
DE102019101991A1 (de) 2019-01-28 2020-07-30 Pva Tepla Ag Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
CN110004492B (zh) * 2019-04-25 2020-06-09 苏州新美光纳米科技有限公司 长晶炉内监测方法及长晶炉
CN110983432B (zh) * 2019-12-25 2021-04-06 南京晶升能源设备有限公司 一种半导体硅材料晶体生长的图像识别控制方法
CN113355741A (zh) * 2020-03-06 2021-09-07 内蒙古中环光伏材料有限公司 一种直拉单晶引晶工艺及用于该引晶工艺的单晶炉
AT524604B1 (de) 2020-12-29 2025-01-15 Fametec Gmbh Verfahren zur Mitverfolgung des Kristallwachstums eines Einkristalls
KR102681152B1 (ko) * 2021-05-28 2024-07-03 (주)셀릭 단결정 잉곳 제조용 멜트 갭 유지장치 및 그를 이용한 멜트 갭 유지방법
CN114481303A (zh) * 2022-01-12 2022-05-13 苏州天准科技股份有限公司 一种拉晶状态监测装置及拉晶设备
CN118727129A (zh) * 2024-06-11 2024-10-01 眉山博雅新材料股份有限公司 一种单晶生长状态可视化的方法、系统和存储介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
DE19738438B4 (de) 1997-09-03 2010-04-08 Crystal Growing Systems Gmbh Einrichtung und Verfahren für die Bestimmung des Durchmessers eines Kristalls
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
JP2004035352A (ja) * 2002-07-05 2004-02-05 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置
US8012255B2 (en) 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
JP5109928B2 (ja) * 2008-10-21 2012-12-26 信越半導体株式会社 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置

Also Published As

Publication number Publication date
EP2659031A1 (en) 2013-11-06
JP2014501220A (ja) 2014-01-20
CN103403233A (zh) 2013-11-20
WO2012090172A1 (en) 2012-07-05
KR20130133261A (ko) 2013-12-06
KR101774625B1 (ko) 2017-09-04
EP2659031B1 (en) 2015-02-18
CN103403233B (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
JP5859566B2 (ja) 多数のカメラを用いる結晶の成長特性計測方法
EP0774536B1 (en) Crystal growing apparatus comprising a non-distorting video camera for controlling the growth of a silicon crystal
JP4018172B2 (ja) シリコン結晶の寸法を決定するための方法及びシステム
KR100491392B1 (ko) 실리콘 결정의 성장을 제어하기 위한 방법 및 시스템
CN104303026B (zh) 双光束非接触式位移传感器
TW444073B (en) Method and system for controlling growth of a silicon crystal
EP1019567B1 (en) Method and system for controlling growth of a silicon crystal
EP0450502B1 (en) Method of diameter measurement used in automatically controlled crystal growth
JP6627739B2 (ja) 単結晶の製造方法
CN101748478B (zh) 一种测量坩埚中硅熔体水平面相对高度的方法
JP2017057097A (ja) 単結晶の製造方法および装置
TWI770661B (zh) 單結晶製造裝置及單結晶的製造方法
US7172656B2 (en) Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus
US20070017435A1 (en) Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
JP2010076979A (ja) Ｆｚ法半導体単結晶製造時の測量方法、測量システム、ｆｚ法半導体単結晶製造時の制御方法、制御システム
JP3611364B2 (ja) 単結晶の直径制御方法
TW201237222A (en) Measuring a crystal growth feature using multiple cameras
CN117187945A (zh) 一种长晶炉硅晶加工监控方法、装置及系统
Mikhlyaev et al. Information characteristics of a crystallization zone image in the Czochralski method
JP6394477B2 (ja) シーディングを実施するタイミングの検知方法及び単結晶の製造方法
CN120041920A (zh) 一种晶体生长过程中图像生成的控制方法
CN117702249A (zh) 液口距确定方法、装置、电子设备及存储介质
CN117190888A (zh) 一种晶棒直径检测装置及晶棒生长设备
KR20230107656A (ko) 결정 견인기에서 실리콘 용융물과 반사기 사이의 거리를 결정하기 위한 비-접촉 시스템들 및 방법들
JPH111390A (ja) 結晶体の引上げ方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150526

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150820

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151117

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151216

R150 Certificate of patent or registration of utility model

Ref document number: 5859566

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250