KR101774625B1 - 다수의 카메라를 사용한 결정 성장 특징의 측정 - Google Patents

다수의 카메라를 사용한 결정 성장 특징의 측정 Download PDF

Info

Publication number
KR101774625B1
KR101774625B1 KR1020137020072A KR20137020072A KR101774625B1 KR 101774625 B1 KR101774625 B1 KR 101774625B1 KR 1020137020072 A KR1020137020072 A KR 1020137020072A KR 20137020072 A KR20137020072 A KR 20137020072A KR 101774625 B1 KR101774625 B1 KR 101774625B1
Authority
KR
South Korea
Prior art keywords
camera
error value
image
crystal
mathematical model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137020072A
Other languages
English (en)
Korean (ko)
Other versions
KR20130133261A (ko
Inventor
스티븐 엘. 킴벨
로버트 에이치. 푸에로프
Original Assignee
썬에디슨, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 썬에디슨, 인크. filed Critical 썬에디슨, 인크.
Publication of KR20130133261A publication Critical patent/KR20130133261A/ko
Application granted granted Critical
Publication of KR101774625B1 publication Critical patent/KR101774625B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020137020072A 2010-12-30 2011-12-28 다수의 카메라를 사용한 결정 성장 특징의 측정 Active KR101774625B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061428339P 2010-12-30 2010-12-30
US61/428,339 2010-12-30
PCT/IB2011/055994 WO2012090172A1 (en) 2010-12-30 2011-12-28 Measuring a crystal growth feature using multiple cameras

Publications (2)

Publication Number Publication Date
KR20130133261A KR20130133261A (ko) 2013-12-06
KR101774625B1 true KR101774625B1 (ko) 2017-09-04

Family

ID=45688190

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137020072A Active KR101774625B1 (ko) 2010-12-30 2011-12-28 다수의 카메라를 사용한 결정 성장 특징의 측정

Country Status (5)

Country Link
EP (1) EP2659031B1 (enExample)
JP (1) JP5859566B2 (enExample)
KR (1) KR101774625B1 (enExample)
CN (1) CN103403233B (enExample)
WO (1) WO2012090172A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103575734B (zh) * 2013-11-22 2016-06-08 晶格码（青岛）智能科技有限公司 晶体三维晶面生长动力学的立体成像测定系统及方法
CN107818559B (zh) * 2017-09-22 2021-08-20 太原理工大学 晶体接种状态检测方法和晶体接种状态图像的采集装置
DE102019101991A1 (de) 2019-01-28 2020-07-30 Pva Tepla Ag Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
CN110004492B (zh) * 2019-04-25 2020-06-09 苏州新美光纳米科技有限公司 长晶炉内监测方法及长晶炉
CN110983432B (zh) * 2019-12-25 2021-04-06 南京晶升能源设备有限公司 一种半导体硅材料晶体生长的图像识别控制方法
CN113355741A (zh) * 2020-03-06 2021-09-07 内蒙古中环光伏材料有限公司 一种直拉单晶引晶工艺及用于该引晶工艺的单晶炉
AT524604B1 (de) 2020-12-29 2025-01-15 Fametec Gmbh Verfahren zur Mitverfolgung des Kristallwachstums eines Einkristalls
KR102681152B1 (ko) * 2021-05-28 2024-07-03 (주)셀릭 단결정 잉곳 제조용 멜트 갭 유지장치 및 그를 이용한 멜트 갭 유지방법
CN114481303A (zh) * 2022-01-12 2022-05-13 苏州天准科技股份有限公司 一种拉晶状态监测装置及拉晶设备
CN118727129A (zh) * 2024-06-11 2024-10-01 眉山博雅新材料股份有限公司 一种单晶生长状态可视化的方法、系统和存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19738438A1 (de) 1997-09-03 1999-03-04 Leybold Systems Gmbh Einrichtung für die Bestimmung des Durchmessers eines Kristalls
JP2001518443A (ja) * 1997-09-30 2001-10-16 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコン結晶の成長を制御する方法及びシステム
JP2010037190A (ja) 2008-07-31 2010-02-18 Sumco Phoenix Corp 単結晶シリコンインゴットの成長方法および成長用装置
JP2010100452A (ja) * 2008-10-21 2010-05-06 Shin Etsu Handotai Co Ltd 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
JP2004035352A (ja) * 2002-07-05 2004-02-05 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19738438A1 (de) 1997-09-03 1999-03-04 Leybold Systems Gmbh Einrichtung für die Bestimmung des Durchmessers eines Kristalls
JP2001518443A (ja) * 1997-09-30 2001-10-16 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコン結晶の成長を制御する方法及びシステム
JP2010037190A (ja) 2008-07-31 2010-02-18 Sumco Phoenix Corp 単結晶シリコンインゴットの成長方法および成長用装置
JP2010100452A (ja) * 2008-10-21 2010-05-06 Shin Etsu Handotai Co Ltd 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置

Also Published As

Publication number Publication date
EP2659031A1 (en) 2013-11-06
JP2014501220A (ja) 2014-01-20
CN103403233A (zh) 2013-11-20
WO2012090172A1 (en) 2012-07-05
KR20130133261A (ko) 2013-12-06
JP5859566B2 (ja) 2016-02-10
EP2659031B1 (en) 2015-02-18
CN103403233B (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
KR101774625B1 (ko) 다수의 카메라를 사용한 결정 성장 특징의 측정
EP0774536B1 (en) Crystal growing apparatus comprising a non-distorting video camera for controlling the growth of a silicon crystal
EP1002144B1 (en) Method and system for controlling growth of a silicon crystal
JP4018172B2 (ja) シリコン結晶の寸法を決定するための方法及びシステム
EP1019567B1 (en) Method and system for controlling growth of a silicon crystal
KR101028684B1 (ko) 실리콘 단결정 인상 방법
US20100064964A1 (en) Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof
JPS63112493A (ja) 結晶径測定装置
CN1323364A (zh) 控制硅晶体生长的方法和系统
CN111962145A (zh) 检测熔体液面位置的方法、装置、设备及计算机存储介质
JP6645406B2 (ja) 単結晶の製造方法
US20070017435A1 (en) Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
KR20010043549A (ko) 결정 성장 장치 및 방법
KR102488064B1 (ko) 단결정 잉곳 성장 장치 및 그 제어 방법
JPH04328425A (ja) 液面位置測定方法，装置及び単結晶引上方法，装置
TW201237222A (en) Measuring a crystal growth feature using multiple cameras
KR102147462B1 (ko) 단결정 잉곳 성장 장치
CN117187945B (zh) 一种长晶炉硅晶加工监控方法、装置及系统
CN117190888A (zh) 一种晶棒直径检测装置及晶棒生长设备
Mikhlyaev et al. Information characteristics of a crystallization zone image in the Czochralski method

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9