CN103403233B - 使用多个相机测量晶体生长特征 - Google Patents

使用多个相机测量晶体生长特征 Download PDF

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Publication number
CN103403233B
CN103403233B CN201180068734.8A CN201180068734A CN103403233B CN 103403233 B CN103403233 B CN 103403233B CN 201180068734 A CN201180068734 A CN 201180068734A CN 103403233 B CN103403233 B CN 103403233B
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China
Prior art keywords
camera
error value
crystal
image
model
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CN201180068734.8A
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English (en)
Chinese (zh)
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CN103403233A (zh
Inventor
S·L·金贝尔
R·H·菲尔克霍夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUNEDISON SEMICONDUCTOR Ltd (UEN201334164H)
GlobalWafers Co Ltd
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201180068734.8A 2010-12-30 2011-12-28 使用多个相机测量晶体生长特征 Active CN103403233B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061428339P 2010-12-30 2010-12-30
US61/428,339 2010-12-30
PCT/IB2011/055994 WO2012090172A1 (en) 2010-12-30 2011-12-28 Measuring a crystal growth feature using multiple cameras

Publications (2)

Publication Number Publication Date
CN103403233A CN103403233A (zh) 2013-11-20
CN103403233B true CN103403233B (zh) 2016-01-20

Family

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Family Applications (1)

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CN201180068734.8A Active CN103403233B (zh) 2010-12-30 2011-12-28 使用多个相机测量晶体生长特征

Country Status (5)

Country Link
EP (1) EP2659031B1 (enExample)
JP (1) JP5859566B2 (enExample)
KR (1) KR101774625B1 (enExample)
CN (1) CN103403233B (enExample)
WO (1) WO2012090172A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103575734B (zh) * 2013-11-22 2016-06-08 晶格码（青岛）智能科技有限公司 晶体三维晶面生长动力学的立体成像测定系统及方法
CN107818559B (zh) * 2017-09-22 2021-08-20 太原理工大学 晶体接种状态检测方法和晶体接种状态图像的采集装置
DE102019101991A1 (de) * 2019-01-28 2020-07-30 Pva Tepla Ag Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze
CN110004492B (zh) * 2019-04-25 2020-06-09 苏州新美光纳米科技有限公司 长晶炉内监测方法及长晶炉
CN110983432B (zh) * 2019-12-25 2021-04-06 南京晶升能源设备有限公司 一种半导体硅材料晶体生长的图像识别控制方法
CN113355741A (zh) * 2020-03-06 2021-09-07 内蒙古中环光伏材料有限公司 一种直拉单晶引晶工艺及用于该引晶工艺的单晶炉
AT524604B1 (de) 2020-12-29 2025-01-15 Fametec Gmbh Verfahren zur Mitverfolgung des Kristallwachstums eines Einkristalls
KR102681152B1 (ko) * 2021-05-28 2024-07-03 (주)셀릭 단결정 잉곳 제조용 멜트 갭 유지장치 및 그를 이용한 멜트 갭 유지방법
CN115727775B (zh) * 2021-08-31 2026-04-24 内蒙古中环晶体材料有限公司 一种单晶等径变形检测方法及装置
CN114481303A (zh) * 2022-01-12 2022-05-13 苏州天准科技股份有限公司 一种拉晶状态监测装置及拉晶设备
CN118727129A (zh) * 2024-06-11 2024-10-01 眉山博雅新材料股份有限公司 一种单晶生长状态可视化的方法、系统和存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147570A (zh) * 1995-06-02 1997-04-16 Memc电子材料有限公司 用于控制硅单晶生长的系统和方法
DE19738438A1 (de) * 1997-09-03 1999-03-04 Leybold Systems Gmbh Einrichtung für die Bestimmung des Durchmessers eines Kristalls
CN1272147A (zh) * 1997-09-30 2000-11-01 Memc电子材料有限公司 控制硅晶体生长的方法和系统
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
JP2004035352A (ja) * 2002-07-05 2004-02-05 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
JP5109928B2 (ja) * 2008-10-21 2012-12-26 信越半導体株式会社 単結晶直径の検出方法、及びこれを用いた単結晶の製造方法、並びに単結晶製造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147570A (zh) * 1995-06-02 1997-04-16 Memc电子材料有限公司 用于控制硅单晶生长的系统和方法
DE19738438A1 (de) * 1997-09-03 1999-03-04 Leybold Systems Gmbh Einrichtung für die Bestimmung des Durchmessers eines Kristalls
CN1272147A (zh) * 1997-09-30 2000-11-01 Memc电子材料有限公司 控制硅晶体生长的方法和系统
US6175652B1 (en) * 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images

Also Published As

Publication number Publication date
WO2012090172A1 (en) 2012-07-05
JP2014501220A (ja) 2014-01-20
JP5859566B2 (ja) 2016-02-10
CN103403233A (zh) 2013-11-20
EP2659031B1 (en) 2015-02-18
EP2659031A1 (en) 2013-11-06
KR20130133261A (ko) 2013-12-06
KR101774625B1 (ko) 2017-09-04

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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20190927

Address after: Taiwan, China Hsinchu Science Park industrial two East Road, No. 8

Patentee after: GlobalWafers Co.,Ltd.

Address before: Singapore City

Patentee before: SunEdison Semiconductor Limited (UEN201334164H)

Effective date of registration: 20190927

Address after: Singapore City

Patentee after: SunEdison Semiconductor Limited (UEN201334164H)

Address before: Missouri, USA

Patentee before: MEMC Electronic Materials, Inc.