JP5859167B2 - 細線回路の製造方法 - Google Patents
細線回路の製造方法 Download PDFInfo
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- JP5859167B2 JP5859167B2 JP2015502153A JP2015502153A JP5859167B2 JP 5859167 B2 JP5859167 B2 JP 5859167B2 JP 2015502153 A JP2015502153 A JP 2015502153A JP 2015502153 A JP2015502153 A JP 2015502153A JP 5859167 B2 JP5859167 B2 JP 5859167B2
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
- H05K3/387—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
- C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
- C23C18/405—Formaldehyde
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0789—Aqueous acid solution, e.g. for cleaning or etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- Chemical & Material Sciences (AREA)
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Description
HDIプリント回路基板、IC基板、およびその種のものについて現在進行している小型化は、従来の方法、例えば印刷およびエッチング法による回路の形成よりも先進的な製造方法を必要とする。
従って、本発明の課題は、ビルドアップ層(1)の上面を粗面化することに起因する欠点を、前記粗面化された上面上に伝導層を堆積する前に回避するかまたは最小化する一方で、伝導層(6)とビルドアップ層(1)の上面との間の十分な密着性を提供する、細線回路の製造方法を提供することである。
この課題は、以下の段階を下記の順で含む、細線回路の製造方法によって解決される:
(i) 前面(1a)および裏面(1b)の表面領域を有する誘電体ビルドアップ層(1)を提供する段階、その際、裏面表面領域(1b)の少なくとも一部が銅領域(2)を含み、且つ、誘電体層(3)が前記裏面表面領域(1b)に施与されており、オルガノシラン化合物、置換ポルフィリン、銅前駆体化合物、および基板に結合するために適した化学的官能基を有する少なくとも1つの付着基を有するナノメートルサイズの酸化物粒子からなる群から選択される密着促進層(9)がビルドアップ層(1)の前面(1a)表面領域に施与されている、
(ii) 第一の伝導層(10)を密着促進層(9)の上に堆積する段階、
(iii) 第一の伝導層(10)、密着促進層(9)およびビルドアップ層(1)を通って少なくとも1つの銅領域へと延びる少なくとも1つの開口部(4)を形成する段階、
(iv) 少なくとも1つの開口部(4)の誘電体側壁および銅領域(2)を洗浄して、洗浄された側壁(5b)および洗浄された銅領域(2)を得る段階、
(v) 少なくとも洗浄された側壁(5b)上で第二の伝導層(11)を形成する段階、その際、第二の伝導層(11)は、電気伝導性のポリマー、貴金属を含むコロイド粒子、電気伝導性のカーボン粒子、および無電解めっきによって堆積される銅からなる群から選択される、
(vi) レジスト層(7)を第一の伝導層(10)上に、または、第二の伝導層(11)が無電解めっきによって堆積された銅である場合には第二の伝導層(11)上に施与し、且つ、前記レジスト層(7)をパターニングする段階、
(vii) 銅層(8)を電気めっきによって、パターニングされたレジスト層(7)の開口部内に堆積する段階、
(viii) パターニングされたレジスト層(7)を除去する段階、および
(ix) 第一の伝導層(10)、または第二の伝導層(11)が無電解めっきによって堆積された銅である場合には第二の伝導層(11)の、電気めっきされた銅層(8)によって被覆されていない部分を除去する段階。
細線回路の製造方法を以下により詳細に記載する。ここで示される図は、工程の単なる説明である。該図は縮尺を合わせて描かれているわけではない、即ち、それらは、積層構造における実際の寸法または様々な層の造形を反映しているわけではない。同じ数字は、明細書を通して同様の要素を示す。
置換ポルフィリン;
銅前駆体化合物の層、例えばUS2009/0004385号A1内に開示されるN−複素環式カルベン銅(I)化合物の層;
基板に結合するために適した化学的官能基を有する少なくとも1つの付着基を有する、1つまたはそれより多くのシリカ、アルミナ、チタニア、ジルコニア、酸化スズおよび酸化亜鉛粒子から選択されるナノメートルサイズの酸化物粒子
である。適した官能基は、例えば、アミノ基、カルボニル基、カルボキシル基、エステル基、エポキシ基、メルカプト基、ヒドロキシル基、アクリル基、メタクリル基、無水物基、酸ハロゲン化物基、ハロゲン基、アリル基、ビニル基、スチレン基、アリール基、アセチレン基、アジド基; 1〜3個の窒素原子を含有する5〜6員の複素環式炭化水素基; イソニコチンアミジル、ビピリジル、ニトリル、イソニトリル、およびチオシアネートである。そのような密着促進層(9)は、EP11191974.2号内に開示されている。
(a) ビルドアップ層(1)の前面(1a)を少なくとも1つのオルガノシラン化合物を含む溶液で処理する段階、および随意に
(b) 前記前面(1a)を、酸化剤を含む溶液で処理する段階。
A(4-x)SiBx
[式中、
各々のAは独立して加水分解性基であり、
xは1〜3であり、且つ
各々のBは独立してC1〜C20−アルキル、アリール、アミノアリール、および式
CnH2nX
[前記nは好ましくは0〜20、より好ましくは0〜8であり、
Xは好ましくはアミノ基、アミド基、ヒドロキシ基、アルコキシ基、ハロ基、メルカプト基、カルボキシ基、カルボキシエステル基、カルボキサミド基、チオカルボキサミド基、アシル基、ビニル基、アリル基、スチリル基、エポキシ基、エポキシシクロヘキシル基、グリシドキシ基、イソシアナト基、チオシアナト基、チオイソシアナト基、ウレイド基、チオウレイド基、グアニジノ基、チオグリシドキシ基、アクリロキシ基、メタクリロキシ基、カルボキシエステル、およびSi(OR)3 [前記RはC1〜C5−アルキル基である]からなる群から選択される]
によって表される官能基からなる群から選択される]
によって示される群から選択される。
a) 少なくとも1つの開口部(4)の洗浄された側壁(5b)を、水溶性ポリマーの溶液と接触させる段階、
b) 少なくとも1つの開口部(4)の洗浄された側壁(5b)を、過マンガン酸塩溶液で処理する段階、
c) 少なくとも1つの開口部(4)の洗浄された側壁(5b)を、少なくとも1つのチオフェン化合物と少なくとも1つのスルホン酸とを含有する、酸性の水溶液または水ベースの酸性のマイクロエマルションで処理する段階。
a) 基板を、塩基を含有する水溶液で処理する段階、および
b) その後、前記基板を、塩基と、ヘキシレングリコール、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールモノイソプロピルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノブチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールモノエチルエーテル、トリエチレングリコールモノプロピルエーテル、トリエチレングリコールモノブチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノエチルエーテル、トリプロピレングリコールモノプロピルエーテル、トリプロピレングリコールモノブチルエーテル、エチレングリコールモノイソプロピルエーテルおよびプロピレングリコールモノメチルエーテルアセテートからなる群から選択される少なくとも1つのストリッピング増強剤とを含有する溶液でさらに処理する段階。
ビルドアップ層(1)の前面(1a)表面領域上に密着促進剤を施与することにより、例えばデスミア法による前記前面(1a)表面領域の粗面化を回避し、第一の伝導層(10)への十分な密着をもたらすことが可能になる。ビルドアップ層(1)の平滑な前面(1a)表面領域の影響は、以下のとおりである:
ビルドアップ層(1)の前面(1a)の表面領域上で、線幅および線間のスペース10μm以下を有する細線回路の製造が、前記前面(1a)表面領域の粗面化を適用する従来技術と比較して、実現可能性がある。
Claims (13)
- 以下の段階:
(i) 前面(1a)および裏面(1b)表面領域を有する誘電体ビルドアップ層(1)を提供する段階、その際、裏面(1b)表面領域の少なくとも一部が銅領域(2)を含み、且つ、誘電体層(3)が前記裏面(1b)表面領域に施与されており、オルガノシラン化合物、および基板に結合するために適した化学的官能基を有する少なくとも1つの付着基を有するナノメートルサイズの酸化物粒子からなる群から選択される密着促進層(9)がビルドアップ層(1)の前面(1a)表面領域に施与されており、オルガノシラン化合物から選択される密着促進層(9)が、
(a) 前記表面を、少なくとも1つのオルガノシラン化合物を含む溶液で処理すること、および
(b) 前記少なくとも1つのオルガノシラン化合物を含む溶液で処理された表面を、酸化剤を含む溶液で処理すること、
によって形成される、
(ii) 第一の伝導層(10)を密着促進層(9)の上に堆積する段階、
(iii) 第一の伝導層(10)、密着促進層(9)およびビルドアップ層(1)を通って少なくとも1つの銅領域(2)へと延びる少なくとも1つの開口部(4)を形成する段階、
(iv) 少なくとも1つの開口部(4)の誘電体側壁および銅領域(2)を洗浄して、洗浄された側壁(5b)および洗浄された銅領域(2)を得る段階、
(v) 第二の伝導層(11)を形成する段階、
その際、第二の伝導層(11)が、電気伝導性のポリマー、貴金属を含むコロイド粒子、又は電気伝導性のカーボン粒子から選択される場合は、少なくとも1つの開口部(4)の洗浄された側壁(5b)上のみに第二の伝導層(11)を形成し、
前記第二の伝導層(11)が、無電解めっきによって堆積される銅である場合は、第一の伝導層(10)、少なくとも1つの開口部(4)の洗浄された側壁(5b)および銅領域(2)の上に第二の伝導層(11)が堆積される、
(vi) 第二の伝導層(11)が、電気伝導性のポリマー、貴金属を含むコロイド粒子又は電気伝導性のカーボン粒子から選択される場合は、レジスト層(7)を第一の伝導層(10)上に施与し、前記第二の伝導層(11)が、無電解めっきによって堆積される銅である場合は、レジスト層(7)を第二の伝導層(11)上に施与し、且つ、ビルドアップ層(1)の前面(1a)表面領域において、前記レジスト層(7)をパターニングする段階、
(vii) 銅層(8)を電気めっきによって、パターニングされたレジスト層(7)の開口部内に堆積する段階、
(viii) パターニングされたレジスト層(7)を除去する段階、および
(ix) 第一の伝導層(10)、及び第二の伝導層(11)が無電解めっきによって堆積された銅である場合には第二の伝導層(11)の、電気めっきされた銅層(8)によって被覆されていない部分を除去する段階、
をこの順で含む、細線回路の製造方法。 - 前記少なくとも1つのオルガノシラン化合物が、式
A(4-x)SiBx
[式中、
各々のAは加水分解性基であり、
xは1〜3であり、且つ
各々のBは独立してC1〜C20−アルキル、アリール、アミノアリール、および式
CnH2nX
[前記nは0〜15であり、且つ
Xはアミノ基、アミド基、ヒドロキシ基、アルコキシ基、ハロ基、メルカプト基、カルボキシ基、カルボキシエステル基、カルボキサミド基、チオカルボキサミド基、アシル基、ビニル基、アリル基、スチリル基、エポキシ基、エポキシシクロヘキシル基、グリシドキシ基、イソシアナト基、チオシアナト基、チオイソシアナト基、ウレイド基、チオウレイド基、グアニジノ基、チオグリシドキシ基、アクリロキシ基、メタクリロキシ基、カルボキシエステル、およびSi(OR)3 [前記RはC1〜C5−アルキル基である]からなる群から選択される]
によって表される官能基からなる群から選択される]
によって表される、請求項1に記載の細線回路の製造方法。 - 前記加水分解性基Aが、−OH、−OR2からなる群から選択され、前記R2はC1〜C5−アルキルおよび−OCOR3からなる群から選択され、且つ、前記R3はHまたはC1〜C5−アルキル基である、請求項2に記載の細線回路の製造方法。
- 前記酸化剤が、過マンガン酸イオンのアルカリ水溶液である、請求項1から3までのいずれか1項に記載の細線回路の製造方法。
- 第一の伝導層(10)が、無電解めっきによって堆積される銅を含む、請求項1から4までのいずれか1項に記載の細線回路の製造方法。
- 前記少なくとも1つの開口部(4)が、レーザードリル加工によって形成される、請求項1から5までのいずれか1項に記載の細線回路の製造方法。
- 少なくとも1つの開口部(4)の誘電体側壁および銅領域(2)が、デスミア法によって洗浄される、請求項1から6までのいずれか1項に記載の細線回路の製造方法。
- 前記第二の伝導層(11)が、ポリチオフェン、ポリピロール、ポリアニリン、それらの誘導体およびそれらの混合物からなる群から選択される電気伝導性のポリマーを含む、請求項1から7までのいずれか1項に記載の細線回路の製造方法。
- 前記第二の伝導層(11)が段階(v)において
(v)a) 少なくとも1つの開口部(4)の洗浄された側壁(5b)を、水溶性ポリマーの溶液と接触させること、
(v)b) 工程(v)a)で処理された、少なくとも1つの開口部(4)の洗浄された側壁(5b)を、過マンガン酸塩溶液で処理すること、および
(v)c) さらに、工程(v)b)で処理された、少なくとも1つの開口部(4)の洗浄された側壁(5b)を、少なくとも1つのチオフェン化合物と少なくとも1つのスルホン酸とを含有する、酸性水溶液または水性ベースの酸性のマイクロエマルションで処理すること
によって形成される、請求項1から8までのいずれか1項に記載の細線回路の製造方法。 - 前記水溶性ポリマーが、ポリビニルアミン、ポリエチレンイミン、ポリビニルイミダゾール、アルキルアミンエチレンオキシドコポリマー、ポリエチレングリコール、ポリプロピレングリコール、エチレングリコールとポリプロピレングリコールとのコポリマー、ポリビニルアルコール、ポリアクリレート、ポリアクリルアミド、ポリビニルピロリドンおよびそれらの混合物からなる群から選択される、請求項9に記載の細線回路の製造方法。
- 前記少なくとも1つのチオフェン化合物が、3−ヘテロ置換チオフェンおよび3,4−ヘテロ置換チオフェンからなる群から選択される、請求項9または10に記載の細線回路の製造方法。
- 前記少なくとも1つのスルホン酸が、メタンスルホン酸、エタンスルホン酸、メタンジスルホン酸、エタンジスルホン酸、ナフタレン1−5−ジスルホン酸、ドデシルベンゼンスルホン酸、ポリスチレンスルホン酸およびそれらの混合物を含む群から選択される、請求項9から11までのいずれか1項に記載の細線回路の製造方法。
- 少なくとも1つのチオフェン化合物と少なくとも1つのスルホン酸とを含む溶液のpH値が、0〜3の範囲である、請求項9から12までのいずれか1項に記載の細線回路の製造方法。
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