TWI691027B - 用於主動組件之電磁屏蔽與熱管理之新穎方法 - Google Patents

用於主動組件之電磁屏蔽與熱管理之新穎方法 Download PDF

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TWI691027B
TWI691027B TW104143207A TW104143207A TWI691027B TW I691027 B TWI691027 B TW I691027B TW 104143207 A TW104143207 A TW 104143207A TW 104143207 A TW104143207 A TW 104143207A TW I691027 B TWI691027 B TW I691027B
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layer
group
metal
nickel
metal layer
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TW104143207A
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TW201637151A (zh
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向井賢一郎
金權一
理 加賀蒂
路茲 布蘭德
塔法茲娃 馬嘉雅
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德商德國艾托特克公司
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Abstract

本發明係關於一種形成用於主動組件之電磁屏蔽與熱管理的金屬層之方法，該方法較佳藉由濕式化學金屬電鍍，在模製化合物之層上使用增黏層且在該增黏層上形成至少一個金屬層或藉由濕式化學金屬電鍍製程在該增黏層上形成至少一個金屬層來達成。

Description

用於主動組件之電磁屏蔽與熱管理之新穎方法
本發明係關於一種用於主動組件之電磁屏蔽與熱管理的方法。
電子消費型裝置變得愈來愈強大，愈來愈小且愈來愈快。此對於如智慧型手機之手持型裝置尤其如此，歸功於其巨大功能性以及其相對較小之尺寸，該等手持型裝置已變得極其風行。該等裝置之效能依賴於高時鐘速度及小積體電路模組。
高時鐘速度之前提條件為在整個電磁波譜中產生電磁發射之高信號速度。特定言之，當電路(主動組件)非常接近彼此安置時，需要對該等發射進行屏蔽。
高信號強度及電磁發射可能引起對電子組件之運作的干擾。此現象有時稱為電磁干擾(EMI)或串擾。屏蔽廣泛用於避免此類干擾。
電子裝置中之諸多組件類型需要此類屏蔽。舉例而言，構成模組之子模可能需要受到屏蔽而免遭EMI透射。
用於主動組件之磁EMI或電EMI屏蔽之各種方法為已知的。當前，此主要由金屬罐來完成。然而，此技術增加空間需求，其對於小型化之趨勢有所不利。
美國專利8,062,930 BI解決降低用於屏蔽之罐的空間需求的需要。描述為一種具有電磁屏蔽之子模的製造過程。首先，形成具有針 對兩個或兩個以上子模之電路的元模組。將包覆模製主體置放於針對全部子模之電路的上方。進一步分割元模組之包覆模製主體以曝露子模中之每一者周圍的金屬層柵格。隨後，將電磁屏蔽材料施加至子模中之每一者的包覆模製主體之外表面且與金屬層柵格接觸。隨後將元模組單一化以形成具有兩個或兩個以上子模之模組。
彼等金屬化封裝主動組件的至關重要之要求為保護封裝之I/O(電輸入/輸出)側免遭其他金屬化，因為此將導致I/O短路。
相關應用為使用保形單側金屬化層熱管理或耗散藉由主動組件產生之熱量。與主動組件之電功率消耗相關的未耗散之熱量可能累積至高溫(超過150℃)，最終損壞或破壞主動組件或晶片之功能性。EMI屏蔽應用中有所相似，必須保護I/O側免遭其他金屬化以防止I/O短路。
因此，需要保形單側屏蔽製程，其能夠有效地且選擇性地屏蔽小型裝置且其並未明顯增加電子組件之大小。
此目標藉由一種形成用於主動組件(基板)之電磁屏蔽與熱管理的金屬層之方法得到解決，該方法較佳藉由濕式化學金屬電鍍達成，該方法包含以下步驟：(i)提供至少一種主動組件(10)，該主動組件具有前側(11)、後側(14)及側壁(20)，該前側(11)包含藉由模製化合物之層(13)封入之至少一個晶片(12)；(ii)在後側上形成保護層(15)；(iii)在前側(11)上且視情況在側壁(20)上形成位於模製化合物之層(13)上之增黏層(16)；(iv)在增黏層上形成至少一個金屬層(17)或 藉由濕式化學金屬電鍍製程在增黏層上形成至少一個金屬層(17)。
10:主動組件
11:主動組件之前側
12:晶片
13:模製化合物之層
14:主動組件之後側
15:保護層
16:增黏層
17:至少一個金屬層
18:焊球
20:主動組件之側壁
圖1顯示一種形成用於根據本發明之電磁屏蔽與熱管理的金屬層之方法。
根據本發明之方法基於化學增黏劑，其中藉由模製化合物封入之組件直接塗佈有金屬層或藉由濕式化學電鍍法直接塗佈有金屬層。用於提供無電式銅或銅合金層或鎳或鎳合金層之方法尤其適合。藉由此方法空間需求降至最低。此外，此製程適合於電子器件及印刷電路板(PCB)工業之現有基礎建設。
在用濕式化學電鍍法將模製化合物金屬化中存在若干挑戰。首先，模製化合物具有高填充劑含量(70-90wt%)以及介於數奈米至數十微米範圍內之寬尺寸分佈。其次，模製化合物不同於積聚樹脂，其對於黏著至電鍍金屬尚未得到最佳化且甚至含有抵抗黏著之蠟狀脫模劑。出於此原因，例如藉由水溶液中之如高錳酸鉀之高錳酸鹽進行的經典去污，隨後進行無電式種晶，可獲得對典型模製化合物的至多2N/cm之最大黏著度。在大多數電子器件應用之後續處理步驟中，此黏著度尚不足以防止脫層。
較佳地，在本發明之方法中，以模製化合物之總重量計，模製化合物包含50至95wt%玻璃填充劑，更佳地，模製化合物包含50至95wt%氧化矽(作為玻璃填充劑)。更佳地，模製化合物不為積聚樹脂。
藉由根據本發明之方法，可將金屬層沈積，其顯示出具有高達5N/cm之黏著強度的高黏著度。電鍍金屬層極好地經受住諸如回焊衝擊之熱可靠性測試(在260℃之溫度下)及HAST處理。藉由根據本發明之方法所獲得之金屬層未展現出脫層或明顯的黏著度損失。
本發明係關於提供用於主動組件之電磁屏蔽與熱管理的改良方法。
可用根據本發明之方法來處理各種EMC(環氧模製化合物)主動組件(基板)。舉例而言，基板選自預分割之條帶、含焊球之單一化晶片或不含焊球之單一化晶片。
主動組件(基板)通常首先在去離子水或標準清潔浴中進行清潔以自表面移除鬆散碎屑及顆粒。
其他預處理可包括在含有如高錳酸鉀或高錳酸鈉之氧化劑的溶液中進行電漿清潔或蝕刻。此類方法在本領域中已為所熟知。
在其之後乃至在清潔步驟之前，為避免與後續處理溶液接觸且由於後側不應受到金屬化，對主動組件(基板)之後側(圖1，(14))加以保護。進入之單一化晶片/條帶(經w型分割的/經進一步分割的(w/Sub-Diced))在其後側(I/O側保護)上一般具有阻焊劑、金屬表面處理或焊球(圖1，(18))。必須保護此側面避開根據本發明之方法中所用之處理溶液，例如避開濕式化學金屬電鍍溶液。在製造中，此保護為關鍵要求且可例如藉由施加膠帶、UV可剝膠帶及一層臨時油墨或臨時密封墊來達成。膠帶可為帶有舒適聚矽氧基底膠帶之聚酯膜膠帶(例如3M Circuit Plating Tape 851)，其藉由真空加以施加。
臨時油墨為市售產品且例如可購自Lackwerke Peters股份兩合公司(Lackwerke Peters GmbH+Co KG)。適合之系列產品為來自Lackwerke Peters之SD2955。此等產品亦用作可易於移除之可剝阻焊劑(solder mask)。熟習此項技術者可根據待覆蓋之基板材料及特定應用來選擇最適合之可剝膠。
膠帶可用於形成主動組件(基板)10之後側的保護層(15)，參見圖1。可以箔片形式提供膠帶，其自基板之後側上之鼓狀物來施加。將在步驟(iv)之後經由用UV光處理來進行移除，其使得膠帶無黏性。
若主動組件(基板)10之後側(14)含有焊球(18)，則藉由施加膠帶不可能形成保護層，因為膠帶無法提供有效之表面密封，且處理液體可滲入在內且開始與基板材料之後側接觸。倘若焊球與後側連接，較佳使用可剝離油墨來形成保護層。在此實施例中，主動組件之後側(14)置放於油墨表面上方且將油墨按壓於表面內以形成緊密保護層。
其後，將化學增黏劑塗覆至基板之未受保護之前側(11)且視情況塗覆至側壁(20)以形成黏著層(16)。化學增黏劑較佳包含一種或一種以上有機化合物，更佳地選自一或多種矽烷化合物。此亦塗覆至增黏層。更佳地，增黏劑及增黏劑層各自不含鐵、鎳及鋅。
矽烷化合物更佳為有機矽烷化合物。有機矽烷化合物呈溶液形式塗覆，較佳為具有高沸點之有機溶劑之溶液，其沸點較佳在60至250℃範圍內且更佳在80至200℃範圍內。本發明含義內之有機溶劑為適合溶解矽烷化合物之極性有機溶劑。
適合之有機溶劑包含醇、醚、胺及乙酸酯。實例為乙醇、2-丙醇、四氫呋喃、乙二醇、二乙二醇、2-異丙氧基乙醇(IPPE)、二(丙二醇)甲醚乙酸酯(DPGMEA)、2-乙基-1-己醇、甘油、丁內酯(butyrolacton)、N-甲基吡咯啶酮(NMP)、二甲基甲醯胺、二甲基乙醯胺、乙醇胺、丙二醇甲醚乙酸酯(PMA)、乙二醇之半醚(half ether)及半酯(half ester)。
有機矽烷化合物之濃度可視應用及特定化合物而定在廣泛範圍內變化。可藉由常規實驗獲得適合之濃度。適合之濃度一般在低至0.1wt%至30wt%之間，較佳在0.5wt%至20wt%之間，甚至更佳在1wt%至8wt%之間變化。
根據方法步驟(iii)使介電基板與含有有機矽烷化合物之溶液接觸係藉由將基板浸漬或浸沒於該溶液中或藉由噴塗溶液至基板上來進行。根據方法步驟(iii)使基板與含有有機矽烷化合物之溶液接觸至少 一次。或者，該接觸可進行若干次，較佳在2至10次之間，更佳在2至5次之間，甚至更佳在1至3次之間。
根據方法步驟(iii)使基板與含有有機矽烷化合物之溶液接觸持續10秒至20分鐘，較佳10秒至10分鐘，最佳10秒至5分鐘範圍內之時間段。
根據方法步驟(iii)在15至100℃，較佳20至50℃，最佳23至35℃範圍內之溫度下使基板與含有有機矽烷化合物之溶液接觸。
矽烷為主之增黏劑層之厚度可變化且通常具有5至100nm之間的厚度。
有機矽烷化合物較佳選自由下式表示之群：A(4-x)SiBx
其中各A獨立地為可水解基團，x為1至3，且各B獨立地選自由以下組成之群：C1-C20烷基、芳基、胺基芳基及由下式表示之官能基：CnH2nX，其中n為0至15，較佳為0至10，甚至更佳為1至8，最佳為1、2、3、4，且X選自由以下組成之群：胺基、醯胺基、羥基、烷氧基、鹵基、巰基、羧基、羧基酯、甲醯胺、硫甲醯胺、醯基、乙烯基、烯丙基、苯乙烯基、環氧基、環氧環己基、縮水甘油氧基(glycidoxy)、異氰酸酯基(isocyanato)、硫氰基、硫異氰基、脲基、硫脲基、胍基、硫胍基、丙烯醯氧基、甲基丙烯醯氧基；或X為羧基酯之殘基；或X為Si(OR)3，且其中R為C1-C5烷基。
較佳地，可水解基團A選自由以下組成之群：-OH、-OR1(且其中R1為C1-C5烷基)、-(CH2)yOR2(且其中y為1、2或3且R2為H或C1-C5烷基)、-OCOR3(且其中R3為H或C1-C5烷基)。
若B為烷基，則其較佳為C1-C10烷基，甚至更佳為C1-C5烷基，如甲基、乙基、丙基或異丙基。芳基較佳為經取代或未經取代之苯基及苯甲基。較佳胺基芳基為-NH(C6H5)。
本發明含義內之官能基X可進一步官能化。舉例而言，X=胺基包含經烷基胺或芳基胺取代之胺，如3-(N-苯乙烯基甲基-2-胺基乙胺基)。
關於為Si(OR)3之官能基X，R較佳為甲基、乙基、丙基或異丙基。
上式內化合物之特定類別之實例為乙烯基矽烷、胺基烷基矽烷、脲基烷基矽烷酯、環氧基烷基矽烷及甲基丙烯醯烷基矽烷酯，其中反應性有機官能基分別為乙烯基、胺基、脲基、環氧基及甲基丙烯醯氧基。乙烯基矽烷之實例為乙烯基三氯矽烷、乙烯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基-參-(β(2)-甲氧基乙氧基)矽烷及乙烯基三乙醯氧基矽烷。作為用於本發明中之較佳有機矽烷的胺基烷基矽烷之實例為γ(3)-胺基丙基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷及N'-(β-胺基乙基)-N-(β-胺基乙基)-γ-胺基丙基三甲氧基矽烷。適合之脲基烷基矽烷酯為γ脲基烷基三乙氧基矽烷，而適合之乙氧基烷基矽烷為β-(3,4-環氧環己基)-乙基三甲氧基矽烷及γ縮水甘油氧基丙基三甲氧基矽烷。適用之甲基丙烯醯氧基矽烷酯為γ-甲基丙烯醯氧基丙基三甲氧基矽烷及γ-甲基丙烯醯氧基丙基-參-(β-甲氧基乙氧基)矽烷。
至少一種有機矽烷化合物可為單體有機矽烷化合物或藉由在沈積於介電基板之表面上之前根據本發明之單體有機矽烷化合物(部分) 水解及縮合而獲得之寡聚有機矽烷化合物。
有機矽烷化合物之水解及縮合在此項技術中為熟知的。舉例而言，單體有機矽烷化合物與例如乙酸或稀鹽酸之酸性催化劑反應，產生衍生自單體有機矽烷化合物之寡聚有機矽烷化合物的澄清溶液。
該等藉由水解衍生自根據本發明之單體有機矽烷化合物的寡聚矽烷應包括於本發明之範疇內。
視情況，可在此方法步驟之後熱處理基板。此類處理一般在60-200℃，更佳80-150℃之間的溫度下進行。處理時間可例如在1至30分鐘之間、較佳在1至10分鐘之間變化。
其後，對含增黏劑層之主動組件(基板)的前側(11)及視情況之側壁(20)進行處理以提供第一導電晶種層(17)。
根據步驟(iv)形成至少一個金屬層例如包含iva.使基板與貴金屬膠體或含有貴金屬離子之溶液接觸；ivb.使基板與至少一種無電式金屬電鍍液接觸以形成第一金屬層；ivc.視情況地，使基板與至少一種電解金屬電鍍液接觸以形成第二金屬層；且ivd.視情況地，使基板與至少一種電解金屬電鍍液接觸以形成第三金屬層。
可例如藉由噴塗溶液進行塗覆以提供第一導電晶種層或藉由浸漬基板於溶液中以提供第一導電晶種層。
對於步驟(iv)，熟習此項技術者已知藉由應用濕式化學電鍍法將金屬電鍍於基板上之若干方法。根據本發明，濕式化學電鍍法較佳為電解電鍍法、浸鍍製程或無電式電鍍法。
在本發明方法之步驟(iv)中，最佳為藉由濕式化學金屬電鍍製程在增黏層上形成至少一個金屬層(17)。
含增黏層之基板表面可在活化之後藉由使用無電式金屬化法或者藉由使用直接電鍍法(電解電鍍法)得到金屬化。針對後續金屬電鍍典型地活化如主動組件之基板如下進行：第一金屬層較佳包含銅或銅合金且藉由無電式電鍍沈積。在此情況下，基板較佳係藉由在無電式沈積銅之前例如沈積含有貴金屬之膠體或包含貴金屬離子之溶液來活化。最佳活化係藉由沈積鈀-錫膠體或鈀離子。此類方法在本領域中得到確立且為熟習此項技術者所已知。
第一金屬層可包含鎳而非銅。鎳包括鎳合金，如鎳硼合金及鎳鐵合金。
對於無電式金屬化，在加速或用還原劑溶液處理之後可首先沖洗物件或基板且接著用鎳進行無電式電鍍。適合之鎳浴含有多種物質，包括作為還原劑之硫酸鎳、例如次磷酸鈉之次磷酸鹽及有機錯合劑，例如檸檬酸鈉，及pH調節劑(例如緩衝劑)。
作為替代方案，可使用無電式銅浴，其通常含有銅鹽，例如硫酸銅或氯化銅，且亦含有諸如甲醛之還原劑，且亦含有一或多種錯合劑，諸如EDTA(乙二胺四乙酸鹽(ethylenediamine tetraacetate))、檸檬酸、酒石酸，以及諸如氫氧化鈉之pH調節劑。
其後，可藉由無電式或電解沈積技術沈積第二金屬層，其亦稱為化學鍍(galvanic plating)。此類第二金屬層是否為需要的且何種層厚度為最適合的要視EMI屏蔽要求或熱管理需求而定。一般而言，用於熱管理應用之金屬層厚度高於EMI屏蔽應用之金屬層厚度。基板較佳含有至少第二金屬層且可視情況含有其他金屬層。
在一些情況下，較佳藉由無電式沈積技術將第二金屬層沈積於第一金屬層上。更佳地，藉由無電式沈積技術沈積第一及第二金屬層。甚至更佳地，(i)第一金屬層包含銅或銅合金且藉由無電式電鍍沈 積且(ii)第二金屬層包含鎳或鎳合金，且藉由無電式電鍍沈積於第一金屬層上。
在另一情況下，以下為較佳的：(i)第一金屬層包含(i-a)鎳或鎳合金(較佳鎳)或(i-b)銅或銅合金(較佳銅)，且藉由無電式電鍍沈積，且(ii)第二金屬層包含(ii-a)鎳或鎳合金或(ii-b)銅或銅合金，且藉由電解電鍍沈積於第一金屬層上。第二金屬層較佳包含鎳合金，更佳鎳/鐵合金。
在另一情況下，以下為較佳的：(i)第一金屬層包含(i-a)鎳或鎳合金(較佳鎳)或(i-b)銅或銅合金(較佳銅)，且藉由無電式電鍍沈積，且(ii)第二金屬層包含(ii-a)銅或銅合金或(ii-b)錫或錫合金，且藉由浸鍍(亦即置換反應)沈積於第一金屬層上。第三金屬層包含(iii-a)鎳或鎳合金或(iii-b)銅或銅合金，且藉由電解電鍍沈積於第二金屬層上(亦即在浸鍍之後所存在之層上)。第三金屬層較佳包含銅或銅合金，更佳銅。第四金屬層包含(vi-a)鎳或鎳合金或(vi-b)銅或銅合金，且藉由無電式電鍍或電解電鍍沈積於第三金屬層上。較佳地，第四金屬層藉由電解電鍍沈積，層較佳包含鎳合金，更佳鎳/鐵合金。
最佳為：(i)第一金屬層包含(i-a)鎳或(i-b)銅，且藉由無電式電鍍沈積，且(ii)第二金屬層包含(ii-a)鎳或(ii-b)銅或(ii-c)鎳/鐵合金，且藉由電解電鍍沈積於第一金屬層上，第二金屬層較佳包含(ii-c)鎳/鐵合金。
在另一特定情況下，至少三個金屬層為較佳的(較佳僅沈積三個金屬層)。沈積順序較佳如下：藉由無電式電鍍沈積第一金屬層，其後藉由電解沈積將第二金屬層沈積於第一金屬層上，其後藉由無電式電鍍將第三金屬層沈積於第二金屬層上。沈積順序更佳如下：第一金屬層包含鎳或鎳合金(較佳鎳)且藉由無電式電鍍沈積，其後第二金屬層包含銅或銅合金(較佳銅)且藉由電解沈積沈積於第一金屬層上，其 後第三金屬層包含鎳或鎳合金(較佳鎳)且藉由無電式電鍍沈積於第二金屬層上。
任何金屬沈積浴均可用於後續電解金屬化，例如用於沈積鎳、銅、銀、金、錫、鋅、鐵、鉛或其合金。此類型之沈積浴為熟習此項技術者所熟知。通常使用瓦特鎳浴(Watts nickel bath)作為亮鎳浴，其含有硫酸鎳、氯化鎳及硼酸以及糖精作為添加劑。作為亮銅浴，使用例如含有硫酸銅、硫酸、氯化鈉以及有機硫化合物之組合物，其中硫，例如以有機硫化物或二硫化物之低氧化階段形式存在作為添加劑。
若使用直接電鍍製程，即第一金屬層並非受到無電式沈積，而是在用轉化溶液處理物件或基板後且在視情況選用之後續沖洗處理之後電解沈積，則使用電解金屬化浴，例如衝擊鎳浴(nickel strike bath)，其較佳係基於瓦特鎳浴而形成。此等類型之浴例如含有硫酸鎳、氯化鎳及硼酸及糖精作為添加劑。
出於本發明之目的，對作為金屬之銅及鎳進行電解電鍍為尤其較佳的。在此等應用中，沈積金屬層，較佳銅及/或之總厚度一般在0.5至300μm之間變化。對於熱管理應用，厚度較佳在20至300μm之間，更佳在50至200μm之間的更高範圍內。對於EMI屏蔽應用，金屬層之總厚度較佳在1至100μm之間，更佳在2至50μm之間且甚至更佳在5至30μm之間變化。
根據本發明之較佳實施例，在步驟(iv)中所沈積之金屬層的順序包含：
a)銅(無電式)作為第一金屬層且銅(電解)作為第二金屬層，兩者具有根據上述範圍之總厚度。
b)鎳(無電式)作為第一金屬層且鎳(電解)作為第二金屬層，兩者具有根據上述範圍之總厚度。
c)鎳或銅(無電式)作為第一金屬層且鎳或銅(電解)作為第二金屬層，兩者具有根據上述範圍之總厚度。
d)鎳或銅(無電式)作為第一金屬層且鎳或銅(電解)作為第二及第三金屬層，均具有根據上述範圍之總厚度。
對於根據a)至d)之金屬層，無電式層之較佳厚度在0.5至20μm之間變化且電解層之較佳厚度在0.5至300μm之間變化。
就電鍍金屬黏著至EMC而言，一個主要關注點在於金屬層之內應力。高內應力降低剝落強度且甚至可能引起局部脫層或起泡。
熱處理沈積金屬層大大提高金屬層對於下伏基板之剝落強度(PS)。此類熱處理亦稱為退火。退火為改變金屬之材料特性之已知處理方法且例如提高其延展性，減輕內應力且藉由使得其均勻來改良金屬結構。
此類熱處理根據本發明方法在最終金屬電鍍步驟之後在以下步驟v.中進行：
v.將至少一個金屬電鍍層加熱至100℃至300℃之間的溫度。
熱處理步驟可在各金屬電鍍步驟之後或僅在最終金屬電鍍步驟之後進行。
對於此熱處理，將基板緩慢加熱至100℃至300℃之間的最高溫度，較佳高達250℃之最高溫度且甚至更佳高達200℃之最高溫度。處理時間視基板材料、電鍍金屬及電鍍金屬層之厚度而變化且可由熟習此項技術者藉由常規實驗來確定。一般而言，處理時間在5分鐘至120分鐘之間，較佳在10分鐘至60分鐘之間變化，且甚至更佳地，高達20分鐘、30分鐘或40分鐘之處理時間為足夠的。
最佳退火製程溫度視目標效能、樹脂Tg或可接受之氧化程度而定。
較佳地，退火之後，將後側(14)上之保護層(15)移除。或者，可 在步驟(iv)中在金屬化之後移除保護層。其後，對基板進行完全分割。
實例
以下實驗意欲說明本發明之益處而不限制其範疇。
在實驗中採用胺基丙基三乙氧基矽烷作為有機矽烷化合物。異丙醇用作有機溶劑。
在實例中使用兩種主動組件(基板)之材料，兩者為填有二氧化矽之環氧樹脂為主之材料。基板材料1為Sumitomo E770D(表2中指示為A)及Hitachi CEL(表2中指示為B)。使用基板材料之兩種不同批次(表2中之批次1及批次2)。從各批次中處理總共4個樣品。值提供於表2中且自4個樣品當中量測平均剝落強度值。
在噴塗之前新製造溶液。針對所進行之全部實驗的矽烷含量為1wt%。
矽烷塗覆：使用ExactaCoat噴塗裝置藉由Sonotek將溶液噴塗於基板上。對於所有研究，設定以下參數：
流動速率：4ml/min.(6ml/min.)
噴嘴距離：8cm
噴嘴速度：175mm/s
重疊：12mm
氮氣流：1.2mPa
一次噴塗循環。
噴塗之後即刻在125℃下烘烤樣品15分鐘。
可視情況在矽烷塗覆至基板表面之前或之後在高錳酸為主之溶液中，例如在含有45g/l MnO4 -及45g/l NaOH之水溶液中處理樣品。
其後，根據提供於表1中之製程參數金屬電鍍樣品。表1包含經塗覆以最終將0.8μm無電式銅及10μm電解沈積銅沈積於基板材料上 之製程順序。步驟1及2(Neoganth)為用於形成鈀為主之活化層之來自Atotech Deutschland公司之市售產品。
Figure 104143207-A0305-02-0016-1
電鍍金屬層對基板之剝落強度量測係藉由在最終退火之後將樣品鋪設成1cm寬及3cm長之條帶來進行。用Erichsen Wuppertal 708應變計使用查狄倫(Chatillon)LTCM-6抽拉機構進行剝落強度量測。全部樣品之黏著度值描繪於表2中。
Figure 104143207-A0305-02-0016-2
所獲得之剝落強度值為約4N/cm或高於4N/cm且適用於EMI與熱管理應用。「Pst Rfl」為在高溫下後回焊之後所獲得之剝落強度值，其用於模擬在工業製程中之焊料操作期間出現於基板之熱衝擊。根據本發明之方法提供用於形成一或多個金屬層之製程為尤其有利的，其中此類後回焊並不會對剝落強度值造成不利影響。
10‧‧‧主動組件
11‧‧‧主動組件之前側
12‧‧‧晶片
13‧‧‧模製化合物之層
14‧‧‧主動組件之後側
15‧‧‧保護層
16‧‧‧增黏層
17‧‧‧至少一個金屬層
18‧‧‧焊球
20‧‧‧主動組件之側壁

Claims (16)

  1. 一種形成用於主動組件之電磁屏蔽與熱管理的金屬層之方法，包含以下步驟：(i)提供至少一種主動組件(10)，該主動組件具有前側(11)、後側(14)及側壁(20)，該前側(11)包含藉由模製化合物之層(13)封入之至少一個晶片(12)；(ii)在該後側上形成選自藉由膠帶、UV可剝膠帶及臨時油墨層之層壓所形成的層之保護層(15)；(iii)在該前側(11)上且視情況在該側壁(20)上形成增黏層(16)；(iv)在該增黏層上形成至少一個金屬層(17)或藉由濕式化學金屬電鍍製程在該增黏層上形成至少一個金屬層(17)，(v)將該至少一個金屬電鍍層加熱至100℃至300℃之間的溫度，其中該保護層在步驟(iv)或(v)之後移除。
  2. 如請求項1之方法，其中該主動組件之後側(14)包含電互連件或I/O，以及視情況選用之焊球(18)。
  3. 如請求項1或2之方法，其中根據步驟(iii)形成施加之增黏層(16)包含：iiia.在該模製化合物之層上沈積一層矽烷為主之增黏劑。
  4. 如請求項3之方法，其中該矽烷為主之增黏劑為選自由下式表示之群的有機矽烷化合物：A(4-x)SiBx 其中各A獨立地為可水解基團，x為1至3，且各B獨立地選自由以下組成之群：C1-C20烷基、芳基、胺基芳基及由下式表示之官能基：CnH2nX，其中n為0至15，且X選自由以下組成之群：胺基、醯胺基、羥基、烷氧基、鹵基、巰基、羧基、羧基酯、甲醯胺、硫甲醯胺、醯基、乙烯基、烯丙基、苯乙烯基、環氧基、環氧環己基、縮水甘油氧基(glycidoxy)、異氰酸酯基(isocyanato)、硫氰基、硫異氰基、脲基、硫脲基、胍基、硫胍基、丙烯醯氧基、甲基丙烯醯氧基；或X為羧基酯之殘基；或X為Si(OR)3，且其中R為C1-C5烷基。
  5. 如請求項4之方法，其中該可水解基團A選自由以下組成之群：-OH、-OR1(且其中R1為C1-C5烷基)、-(CH2)yOR2(且其中y為1、2或3且R2為H或C1-C5烷基)、-OCOR3(且其中R3為H或C1-C5烷基)。
  6. 如請求項3之方法，其中該矽烷為主之增黏劑之層具有在5至100nm之間的厚度。
  7. 如請求項1之方法，其中根據步驟(iv)形成金屬層包含iva.使該基板與貴金屬膠體或含有貴金屬離子之溶液接觸；接著ivb.使該基板與至少一種無電式金屬電鍍液接觸。
  8. 如請求項1之方法，其中根據步驟(iv)形成金屬層包含iva.使該基板與貴金屬膠體或含有貴金屬離子之溶液接觸；下一步 ivb.使該基板與至少一種無電式金屬電鍍液接觸；接著ivc.使該基板與至少一種電解金屬電鍍液接觸。
  9. 如請求項1或2之方法，其中用於電磁屏蔽之該等金屬層的總厚度在1與100μm之間變化。
  10. 如請求項1或2之方法，其中用於熱管理之該等金屬層的該總厚度在20至300μm之間變化。
  11. 如請求項7或8之方法，其中根據步驟ivb之該無電式金屬電鍍包含無電式鎳電鍍，得到厚度在0.5與20μm之間的鎳層，及無電式銅電鍍，得到厚度在0.5與20μm之間的銅層。
  12. 如請求項8之方法，其中根據步驟ivc之該電解金屬電鍍包含電解鎳電鍍，得到厚度在0.5與300μm之間的鎳層，及電解銅電鍍，得到厚度在0.5與300μm之間的銅層。
  13. 如請求項1之方法，其中於步驟(i)中該至少一種主動組件係選自預分割之條帶、含焊球之單一化晶片或不含焊球之單一化晶片。
  14. 如請求項1之方法，其中該增黏層包含一種或一種以上有機化合物。
  15. 如請求項1之方法，其中該增黏層不含鐵、鎳及鋅。
  16. 如請求項1之方法，其中在移除該保護層後對該主動組件進行完全分割。
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CN107112311A (zh) 2017-08-29
SG11201704871QA (en) 2017-07-28
JP2018502453A (ja) 2018-01-25
TW201637151A (zh) 2016-10-16
EP3238249B1 (en) 2020-12-09
KR102049650B1 (ko) 2019-11-28
CN107112311B (zh) 2020-10-02
EP3238249A1 (en) 2017-11-01
US10249572B2 (en) 2019-04-02
US20170330861A1 (en) 2017-11-16
KR20170099982A (ko) 2017-09-01

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