SG11201704871QA - Method for electromagnetic shielding and thermal management of active components - Google Patents
Method for electromagnetic shielding and thermal management of active componentsInfo
- Publication number
- SG11201704871QA SG11201704871QA SG11201704871QA SG11201704871QA SG11201704871QA SG 11201704871Q A SG11201704871Q A SG 11201704871QA SG 11201704871Q A SG11201704871Q A SG 11201704871QA SG 11201704871Q A SG11201704871Q A SG 11201704871QA SG 11201704871Q A SG11201704871Q A SG 11201704871QA
- Authority
- SG
- Singapore
- Prior art keywords
- electromagnetic shielding
- active components
- thermal management
- management
- shielding
- Prior art date
Links
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- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/1601—Process or apparatus
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- C23C18/1605—Process or apparatus coating on selected surface areas by masking
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP14199574 | 2014-12-22 | ||
PCT/EP2015/002594 WO2016102066A1 (en) | 2014-12-22 | 2015-12-22 | Method for electromagnetic shielding and thermal management of active components |
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SG11201704871QA true SG11201704871QA (en) | 2017-07-28 |
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SG11201704871QA SG11201704871QA (en) | 2014-12-22 | 2015-12-22 | Method for electromagnetic shielding and thermal management of active components |
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US (1) | US10249572B2 (zh) |
EP (1) | EP3238249B1 (zh) |
JP (1) | JP2018502453A (zh) |
KR (1) | KR102049650B1 (zh) |
CN (1) | CN107112311B (zh) |
SG (1) | SG11201704871QA (zh) |
TW (1) | TWI691027B (zh) |
WO (1) | WO2016102066A1 (zh) |
Families Citing this family (6)
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KR100470107B1 (ko) * | 1999-12-31 | 2005-02-04 | 에스케이케미칼주식회사 | 밀폐형 난방 시스템용 설비 보호제 조성물 |
JP6679162B2 (ja) * | 2016-02-17 | 2020-04-15 | 株式会社ディスコ | 半導体パッケージの製造方法 |
US10854556B2 (en) * | 2016-10-12 | 2020-12-01 | Advanced Semiconductor Engineering Korea, Inc. | Semiconductor package device and method of manufacturing the same |
KR102187350B1 (ko) | 2018-11-20 | 2020-12-07 | 주식회사 에스모머티리얼즈 | 반도체 패키지 제조용 몰딩 장치 및 이를 통하여 제조된 반도체 패키지 |
JP2020136331A (ja) * | 2019-02-14 | 2020-08-31 | 株式会社日産アーク | 半導体装置及びその製造方法 |
CN113436978B (zh) * | 2021-05-10 | 2024-03-12 | 江苏长电科技股份有限公司 | 一种bga溅镀工艺方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3011920A (en) * | 1959-06-08 | 1961-12-05 | Shipley Co | Method of electroless deposition on a substrate and catalyst solution therefor |
US3995371A (en) * | 1974-10-10 | 1976-12-07 | The Curators Of The University Of Missouri | Electroless plating method for treating teeth |
US6306594B1 (en) * | 1988-11-14 | 2001-10-23 | I-Stat Corporation | Methods for microdispensing patterened layers |
WO1999023676A1 (fr) * | 1997-10-30 | 1999-05-14 | Sumitomo Special Metals Co., Ltd. | Procede de fabrication d'aimants a liaison r-fe-b presentant une haute resistance a la corrosion |
TW554348B (en) * | 1999-05-13 | 2003-09-21 | Shinetsu Chemical Co | Conductive powder and making process |
JP2005109306A (ja) * | 2003-10-01 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 電子部品パッケージおよびその製造方法 |
TWI229911B (en) * | 2003-12-16 | 2005-03-21 | Univ Nat Central | Method for controlling the bond microstructures |
US7601427B2 (en) * | 2005-04-26 | 2009-10-13 | Fujifilm Corporation | Curable composition, cured film, antireflection film, polarizing plate and liquid crystal display |
US8062930B1 (en) | 2005-08-08 | 2011-11-22 | Rf Micro Devices, Inc. | Sub-module conformal electromagnetic interference shield |
JP5092391B2 (ja) * | 2006-12-22 | 2012-12-05 | 富士通株式会社 | 樹脂筐体及びその製造方法 |
US7811904B2 (en) * | 2007-01-31 | 2010-10-12 | Alpha And Omega Semiconductor Incorporated | Method of fabricating a semiconductor device employing electroless plating |
JP2008192978A (ja) | 2007-02-07 | 2008-08-21 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
JP5324191B2 (ja) * | 2008-11-07 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5391747B2 (ja) * | 2009-03-10 | 2014-01-15 | パナソニック株式会社 | モジュール部品とモジュール部品の製造方法と、これを用いた電子機器 |
US8380949B2 (en) * | 2010-05-20 | 2013-02-19 | International Business Machines Corporation | Managing write operations to an extent of tracks migrated between storage devices |
CN202443968U (zh) * | 2012-01-16 | 2012-09-19 | 日月光半导体制造股份有限公司 | 半导体封装构造 |
CN104204294B (zh) * | 2012-03-29 | 2018-12-07 | 德国艾托特克公司 | 促进介电衬底与金属层之间粘着度的方法 |
EP2644744A1 (en) | 2012-03-29 | 2013-10-02 | Atotech Deutschland GmbH | Method for promoting adhesion between dielectric substrates and metal layers |
EP2645830B1 (en) | 2012-03-29 | 2014-10-08 | Atotech Deutschland GmbH | Method for manufacture of fine line circuitry |
JP2014183181A (ja) * | 2013-03-19 | 2014-09-29 | Tdk Corp | 電子部品モジュール及びその製造方法 |
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2015
- 2015-12-22 CN CN201580070483.5A patent/CN107112311B/zh active Active
- 2015-12-22 EP EP15828649.2A patent/EP3238249B1/en active Active
- 2015-12-22 TW TW104143207A patent/TWI691027B/zh active
- 2015-12-22 KR KR1020177020541A patent/KR102049650B1/ko active IP Right Grant
- 2015-12-22 JP JP2017533873A patent/JP2018502453A/ja active Pending
- 2015-12-22 WO PCT/EP2015/002594 patent/WO2016102066A1/en active Application Filing
- 2015-12-22 US US15/536,185 patent/US10249572B2/en active Active
- 2015-12-22 SG SG11201704871QA patent/SG11201704871QA/en unknown
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EP3238249B1 (en) | 2020-12-09 |
TWI691027B (zh) | 2020-04-11 |
KR102049650B1 (ko) | 2019-11-28 |
KR20170099982A (ko) | 2017-09-01 |
TW201637151A (zh) | 2016-10-16 |
US20170330861A1 (en) | 2017-11-16 |
EP3238249A1 (en) | 2017-11-01 |
US10249572B2 (en) | 2019-04-02 |
JP2018502453A (ja) | 2018-01-25 |
CN107112311B (zh) | 2020-10-02 |
WO2016102066A1 (en) | 2016-06-30 |
CN107112311A (zh) | 2017-08-29 |
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