JP5859046B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
- Publication number
- JP5859046B2 JP5859046B2 JP2014045576A JP2014045576A JP5859046B2 JP 5859046 B2 JP5859046 B2 JP 5859046B2 JP 2014045576 A JP2014045576 A JP 2014045576A JP 2014045576 A JP2014045576 A JP 2014045576A JP 5859046 B2 JP5859046 B2 JP 5859046B2
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- substrate
- bonding
- particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
前記接合層の接合材は、焼結することで接合層を形成する材料粒子を含有し、該材料粒子はナノオーダーないしミクロンオーダーの大きさを有する接合材料粒子と、表面にCoをコーティングした、該接合層の厚さを制御する大きさを有するスペーサー粒子とを含むことを特徴とする半導体素子が提供される。
Claims (4)
- 第1の基板と、該第1の基板の一主面上に設けられた接合層と、該接合層上に設けられた、第2の基板、該第2の基板上に設けられた配線部、及び該配線部上に実装された少なくとも1つの半導体チップを含む半導体実装部品とを具備する半導体素子において、
前記接合層の接合材は、焼結することで接合層を形成する材料粒子を含有し、該材料粒子はナノオーダーないしミクロンオーダーの大きさを有する接合材料粒子と、表面にCoをコーティングした、該接合層の厚さを制御する大きさを有するスペーサー粒子とを含むことを特徴とする半導体素子。 - 前記スペーサー粒子はCu粒子であり、その表面にCoがめっきされている請求項1に記載の半導体素子。
- 前記第1の基板の一主面に凹凸形状の表面処理部を有することを特徴とする請求項1または2に記載の半導体素子。
- 前記半導体チップは、絶縁ゲート型バイポーラトランジスタチップを含み、前記半導体実装部品上に充填された絶縁性ゲルと、該半導体実装部品及び該絶縁性ゲルを封止するケースとをさらに含むことを特徴とする請求項1ないし3のいずれか1項に記載の半導体素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014045576A JP5859046B2 (ja) | 2014-03-07 | 2014-03-07 | 半導体素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014045576A JP5859046B2 (ja) | 2014-03-07 | 2014-03-07 | 半導体素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010179628A Division JP5832731B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
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JP2014131076A JP2014131076A (ja) | 2014-07-10 |
JP5859046B2 true JP5859046B2 (ja) | 2016-02-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014045576A Expired - Fee Related JP5859046B2 (ja) | 2014-03-07 | 2014-03-07 | 半導体素子 |
Country Status (1)
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JP (1) | JP5859046B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267362A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 半導体装置の実装構造 |
JP2589329Y2 (ja) * | 1992-05-20 | 1999-01-27 | サンケン電気株式会社 | 半導体装置 |
JPH06120283A (ja) * | 1992-09-30 | 1994-04-28 | Nec Kansai Ltd | 半導体ペレット及びそのマウント方法 |
JP4182234B2 (ja) * | 2002-09-20 | 2008-11-19 | Dowaエレクトロニクス株式会社 | 導電ペースト用銅粉およびその製造方法 |
JP4228926B2 (ja) * | 2003-10-03 | 2009-02-25 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
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2014
- 2014-03-07 JP JP2014045576A patent/JP5859046B2/ja not_active Expired - Fee Related
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