JP5850056B2 - 樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス - Google Patents
樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス Download PDFInfo
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- JP5850056B2 JP5850056B2 JP2013530974A JP2013530974A JP5850056B2 JP 5850056 B2 JP5850056 B2 JP 5850056B2 JP 2013530974 A JP2013530974 A JP 2013530974A JP 2013530974 A JP2013530974 A JP 2013530974A JP 5850056 B2 JP5850056 B2 JP 5850056B2
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- 238000010292 electrical insulation Methods 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000000434 field desorption mass spectrometry Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- ZZOBOWAIBKQKQW-UHFFFAOYSA-M potassium;acetyl chloride;hydroxide Chemical compound [OH-].[K+].CC(Cl)=O ZZOBOWAIBKQKQW-UHFFFAOYSA-M 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
- Epoxy Resins (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/069845 WO2013030998A1 (fr) | 2011-08-31 | 2011-08-31 | Composition de résine, feuille de résine, feuille de résine dotée d'une feuille métallique, feuille de résine durcie, structure et dispositif à semi-conducteur pour une source d'énergie ou de lumière |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015237364A Division JP6222209B2 (ja) | 2015-12-04 | 2015-12-04 | 樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2013030998A1 JPWO2013030998A1 (ja) | 2015-03-23 |
| JP5850056B2 true JP5850056B2 (ja) | 2016-02-03 |
Family
ID=47755547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013530974A Expired - Fee Related JP5850056B2 (ja) | 2011-08-31 | 2011-08-31 | 樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5850056B2 (fr) |
| KR (3) | KR101970771B1 (fr) |
| CN (1) | CN103764713B (fr) |
| TW (2) | TWI585147B (fr) |
| WO (1) | WO2013030998A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016104862A (ja) * | 2015-12-04 | 2016-06-09 | 日立化成株式会社 | 樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103959488B (zh) * | 2013-03-28 | 2015-09-30 | 日东电工株式会社 | 系统、制造条件决定装置以及制造管理装置 |
| JP5373215B1 (ja) * | 2013-03-28 | 2013-12-18 | 日東電工株式会社 | システム、製造条件決定装置および製造管理装置 |
| CN105895788A (zh) * | 2014-05-08 | 2016-08-24 | 罗冠杰 | 片式白光发光二极管、制备片式白光发光二极管的方法及封装胶材 |
| WO2016002846A1 (fr) * | 2014-07-02 | 2016-01-07 | 住友ベークライト株式会社 | Dispositif semi-conducteur |
| JP6536045B2 (ja) * | 2015-01-28 | 2019-07-03 | 日立化成株式会社 | 樹脂組成物、樹脂シート及び樹脂シート硬化物 |
| JP6616344B2 (ja) * | 2017-03-24 | 2019-12-04 | 株式会社豊田中央研究所 | 熱伝導性複合材料 |
| CN107958857B (zh) * | 2017-11-28 | 2024-03-19 | 北方电子研究院安徽有限公司 | 一种压块触发装置和环氧树脂真空低压封装工艺方法 |
| US11661495B2 (en) | 2018-06-26 | 2023-05-30 | Kyocera Corporation | Organic board, metal-clad laminate, and wiring board |
| EP3858885B1 (fr) * | 2018-09-28 | 2024-05-08 | FUJIFILM Corporation | Composition pour former des matériaux thermoconducteurs, matériau thermoconducteur, feuille thermoconductrice, dispositif avec couche thermoconductrice, et film |
| EP3733753A1 (fr) * | 2019-05-03 | 2020-11-04 | 3M Innovative Properties Company | Film utilisable pour le traitement rouleau à rouleau de dispositifs électroniques flexibles comprenant un matériau composite d'un polymère et de nitrure de bore |
| JP7424167B2 (ja) * | 2020-03-31 | 2024-01-30 | 味の素株式会社 | 樹脂組成物、樹脂組成物の硬化物、樹脂シート、プリント配線板、半導体チップパッケージ及び半導体装置 |
| JP7424168B2 (ja) * | 2020-03-31 | 2024-01-30 | 味の素株式会社 | 樹脂組成物、樹脂ペースト、硬化物、樹脂シート、プリント配線板、半導体チップパッケージ及び半導体装置 |
| WO2023189610A1 (fr) * | 2022-03-31 | 2023-10-05 | デンカ株式会社 | Composition de résine, corps durci en résine isolante, stratifié et substrat de circuit |
| WO2023189609A1 (fr) * | 2022-03-31 | 2023-10-05 | デンカ株式会社 | Composition de résine, corps durci en résine isolante, stratifié et substrat de circuit |
| CN117812802A (zh) * | 2022-09-26 | 2024-04-02 | 鹏鼎控股(深圳)股份有限公司 | 具散热功能的电路板及其制造方法 |
| TWI839000B (zh) * | 2022-12-05 | 2024-04-11 | 立錡科技股份有限公司 | 封裝結構以及封裝方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03258829A (ja) * | 1990-03-07 | 1991-11-19 | Mitsui Toatsu Chem Inc | 高耐熱性エポキシ樹脂組成物 |
| JPH03258830A (ja) * | 1990-03-08 | 1991-11-19 | Mitsui Toatsu Chem Inc | 半導体封止用エポキシ樹脂組成物 |
| JP3151826B2 (ja) * | 1990-11-07 | 2001-04-03 | 日立化成工業株式会社 | 電子部品封止用エポキシ樹脂成形材料 |
| JPH09328610A (ja) * | 1996-06-12 | 1997-12-22 | Nitto Denko Corp | 耐熱樹脂製管状物 |
| US6645612B2 (en) * | 2001-08-07 | 2003-11-11 | Saint-Gobain Ceramics & Plastics, Inc. | High solids hBN slurry, hBN paste, spherical hBN powder, and methods of making and using them |
| JP5010112B2 (ja) * | 2004-07-26 | 2012-08-29 | 新神戸電機株式会社 | プリプレグの製造法、積層板およびプリント配線板の製造法 |
| EP2119737B1 (fr) * | 2008-05-15 | 2011-05-04 | Evonik Degussa GmbH | Emballage électronique |
| WO2011040416A1 (fr) * | 2009-09-29 | 2011-04-07 | 日立化成工業株式会社 | Composition de résine, feuille de résine, et produit durci en résine et son procédé de production |
| KR20160140996A (ko) * | 2009-09-29 | 2016-12-07 | 히타치가세이가부시끼가이샤 | 다층 수지 시트 및 그 제조 방법, 다층 수지 시트 경화물의 제조 방법, 그리고, 고열전도 수지 시트 적층체 및 그 제조 방법 |
-
2011
- 2011-08-31 KR KR1020187002450A patent/KR101970771B1/ko active IP Right Grant
- 2011-08-31 KR KR1020147007771A patent/KR101825259B1/ko active IP Right Grant
- 2011-08-31 KR KR1020197010761A patent/KR102081876B1/ko active IP Right Grant
- 2011-08-31 CN CN201180073184.9A patent/CN103764713B/zh not_active Expired - Fee Related
- 2011-08-31 WO PCT/JP2011/069845 patent/WO2013030998A1/fr active Application Filing
- 2011-08-31 JP JP2013530974A patent/JP5850056B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-31 TW TW105112040A patent/TWI585147B/zh not_active IP Right Cessation
- 2012-08-31 TW TW101131781A patent/TWI548692B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016104862A (ja) * | 2015-12-04 | 2016-06-09 | 日立化成株式会社 | 樹脂組成物、樹脂シート、金属箔付き樹脂シート、樹脂硬化物シート、構造体、および動力用又は光源用半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101825259B1 (ko) | 2018-02-02 |
| TW201319158A (zh) | 2013-05-16 |
| KR20140071377A (ko) | 2014-06-11 |
| KR20180012343A (ko) | 2018-02-05 |
| KR102081876B1 (ko) | 2020-02-26 |
| KR20190042109A (ko) | 2019-04-23 |
| CN103764713A (zh) | 2014-04-30 |
| KR101970771B1 (ko) | 2019-04-22 |
| WO2013030998A1 (fr) | 2013-03-07 |
| CN103764713B (zh) | 2016-08-24 |
| TWI585147B (zh) | 2017-06-01 |
| JPWO2013030998A1 (ja) | 2015-03-23 |
| TWI548692B (zh) | 2016-09-11 |
| TW201625735A (zh) | 2016-07-16 |
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