JP5839807B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP5839807B2
JP5839807B2 JP2011026348A JP2011026348A JP5839807B2 JP 5839807 B2 JP5839807 B2 JP 5839807B2 JP 2011026348 A JP2011026348 A JP 2011026348A JP 2011026348 A JP2011026348 A JP 2011026348A JP 5839807 B2 JP5839807 B2 JP 5839807B2
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Japan
Prior art keywords
insulating film
mask
opening
imaging device
state imaging
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Expired - Fee Related
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JP2011026348A
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English (en)
Japanese (ja)
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JP2012164942A5 (enExample
JP2012164942A (ja
Inventor
近藤　隆治
隆治 近藤
崇 碓井
崇 碓井
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011026348A priority Critical patent/JP5839807B2/ja
Priority to US13/360,456 priority patent/US8679922B2/en
Priority to CN201210027912.9A priority patent/CN102637707B/zh
Publication of JP2012164942A publication Critical patent/JP2012164942A/ja
Publication of JP2012164942A5 publication Critical patent/JP2012164942A5/ja
Application granted granted Critical
Publication of JP5839807B2 publication Critical patent/JP5839807B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011026348A 2011-02-09 2011-02-09 固体撮像装置の製造方法 Expired - Fee Related JP5839807B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011026348A JP5839807B2 (ja) 2011-02-09 2011-02-09 固体撮像装置の製造方法
US13/360,456 US8679922B2 (en) 2011-02-09 2012-01-27 Method of producing semiconductor device and method of producing solid-state image pickup device
CN201210027912.9A CN102637707B (zh) 2011-02-09 2012-02-09 半导体装置的制造方法和固态图像拾取装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011026348A JP5839807B2 (ja) 2011-02-09 2011-02-09 固体撮像装置の製造方法

Publications (3)

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JP2012164942A JP2012164942A (ja) 2012-08-30
JP2012164942A5 JP2012164942A5 (enExample) 2014-03-27
JP5839807B2 true JP5839807B2 (ja) 2016-01-06

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Family Applications (1)

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JP2011026348A Expired - Fee Related JP5839807B2 (ja) 2011-02-09 2011-02-09 固体撮像装置の製造方法

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US (1) US8679922B2 (enExample)
JP (1) JP5839807B2 (enExample)
CN (1) CN102637707B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6151499B2 (ja) 2012-09-11 2017-06-21 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6308727B2 (ja) * 2013-06-13 2018-04-11 キヤノン株式会社 電子デバイスの製造方法
JP6075646B2 (ja) * 2014-03-17 2017-02-08 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2017220620A (ja) * 2016-06-09 2017-12-14 キヤノン株式会社 固体撮像装置の製造方法
JP7125345B2 (ja) * 2016-07-06 2022-08-24 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、及び、電子機器
JP2017130693A (ja) * 2017-04-13 2017-07-27 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
CN114335281B (zh) * 2021-12-31 2024-07-02 淮安澳洋顺昌光电技术有限公司 一种半导体发光元件及其制备方法、led芯片

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186391A (ja) * 1997-12-25 1999-07-09 Toshiba Corp 半導体装置およびその製造方法
JP2000332108A (ja) * 1999-05-20 2000-11-30 Nec Corp 半導体装置及びその製造方法
JP2001156169A (ja) * 1999-11-29 2001-06-08 Hitachi Ltd 半導体集積回路装置の製造方法
JP4117672B2 (ja) * 2002-05-01 2008-07-16 ソニー株式会社 固体撮像素子及び固体撮像装置、並びにこれらの製造方法
JP2004214594A (ja) * 2002-11-15 2004-07-29 Sharp Corp 半導体装置およびその製造方法
JP2007201091A (ja) * 2006-01-25 2007-08-09 Fujifilm Corp 固体撮像素子の製造方法
JP4984579B2 (ja) 2006-03-10 2012-07-25 株式会社日立製作所 高耐圧半導体集積回路装置
KR20080015643A (ko) 2006-08-16 2008-02-20 삼성전자주식회사 내부 렌즈들을 구비하는 이미지 센서 및 그 제조방법
JP2008047902A (ja) 2006-08-16 2008-02-28 Samsung Electronics Co Ltd イメージセンサ及びその製造方法
JP4364225B2 (ja) 2006-09-15 2009-11-11 株式会社東芝 半導体装置およびその製造方法
JP2008166677A (ja) 2006-12-08 2008-07-17 Sony Corp 固体撮像装置とその製造方法並びにカメラ
US7973271B2 (en) 2006-12-08 2011-07-05 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
JP2008235689A (ja) 2007-03-22 2008-10-02 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP5103118B2 (ja) * 2007-09-27 2012-12-19 オンセミコンダクター・トレーディング・リミテッド 半導体ウエハおよびその製造方法
JP4697258B2 (ja) 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
JP2010010372A (ja) * 2008-06-26 2010-01-14 Fujitsu Microelectronics Ltd 電子装置及びその製造方法
JP4794656B2 (ja) * 2009-06-11 2011-10-19 シャープ株式会社 半導体装置
JP2011023481A (ja) * 2009-07-14 2011-02-03 Panasonic Corp 固体撮像装置及びその製造方法
JP2012151187A (ja) * 2011-01-17 2012-08-09 Toshiba Corp 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
US20120202309A1 (en) 2012-08-09
CN102637707A (zh) 2012-08-15
JP2012164942A (ja) 2012-08-30
CN102637707B (zh) 2014-10-15
US8679922B2 (en) 2014-03-25

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