CN102637707B - 半导体装置的制造方法和固态图像拾取装置的制造方法 - Google Patents
半导体装置的制造方法和固态图像拾取装置的制造方法 Download PDFInfo
- Publication number
- CN102637707B CN102637707B CN201210027912.9A CN201210027912A CN102637707B CN 102637707 B CN102637707 B CN 102637707B CN 201210027912 A CN201210027912 A CN 201210027912A CN 102637707 B CN102637707 B CN 102637707B
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- Prior art keywords
- dielectric film
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- etching
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
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- 239000011261 inert gas Substances 0.000 description 3
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- 125000006850 spacer group Chemical group 0.000 description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
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- -1 CH 2 F 2 Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-026348 | 2011-02-09 | ||
| JP2011026348A JP5839807B2 (ja) | 2011-02-09 | 2011-02-09 | 固体撮像装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637707A CN102637707A (zh) | 2012-08-15 |
| CN102637707B true CN102637707B (zh) | 2014-10-15 |
Family
ID=46600897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210027912.9A Expired - Fee Related CN102637707B (zh) | 2011-02-09 | 2012-02-09 | 半导体装置的制造方法和固态图像拾取装置的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8679922B2 (enExample) |
| JP (1) | JP5839807B2 (enExample) |
| CN (1) | CN102637707B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6151499B2 (ja) * | 2012-09-11 | 2017-06-21 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| JP6308727B2 (ja) * | 2013-06-13 | 2018-04-11 | キヤノン株式会社 | 電子デバイスの製造方法 |
| JP6075646B2 (ja) * | 2014-03-17 | 2017-02-08 | ソニー株式会社 | 固体撮像装置およびその駆動方法、並びに電子機器 |
| JP2017220620A (ja) * | 2016-06-09 | 2017-12-14 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| CN109314123B (zh) * | 2016-07-06 | 2023-06-20 | 索尼半导体解决方案公司 | 成像元件、成像元件的制造方法以及电子设备 |
| JP2017130693A (ja) * | 2017-04-13 | 2017-07-27 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| CN114335281B (zh) * | 2021-12-31 | 2024-07-02 | 淮安澳洋顺昌光电技术有限公司 | 一种半导体发光元件及其制备方法、led芯片 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501487A (zh) * | 2002-11-15 | 2004-06-02 | ������������ʽ���� | 半导体装置及其制造方法 |
| CN101034709A (zh) * | 2006-03-10 | 2007-09-12 | 株式会社日立制作所 | 高耐压半导体集成电路装置、电介质分离型半导体装置 |
| CN101145560A (zh) * | 2006-09-15 | 2008-03-19 | 株式会社东芝 | 半导体器件及其制造方法 |
| JP2008235689A (ja) * | 2007-03-22 | 2008-10-02 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| CN101924136A (zh) * | 2009-06-11 | 2010-12-22 | 夏普株式会社 | 半导体装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11186391A (ja) * | 1997-12-25 | 1999-07-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2000332108A (ja) * | 1999-05-20 | 2000-11-30 | Nec Corp | 半導体装置及びその製造方法 |
| JP2001156169A (ja) * | 1999-11-29 | 2001-06-08 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP4117672B2 (ja) * | 2002-05-01 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
| JP2007201091A (ja) * | 2006-01-25 | 2007-08-09 | Fujifilm Corp | 固体撮像素子の製造方法 |
| JP2008047902A (ja) | 2006-08-16 | 2008-02-28 | Samsung Electronics Co Ltd | イメージセンサ及びその製造方法 |
| KR20080015643A (ko) | 2006-08-16 | 2008-02-20 | 삼성전자주식회사 | 내부 렌즈들을 구비하는 이미지 센서 및 그 제조방법 |
| JP2008166677A (ja) | 2006-12-08 | 2008-07-17 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
| EP1930950B1 (en) | 2006-12-08 | 2012-11-07 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| JP5103118B2 (ja) * | 2007-09-27 | 2012-12-19 | オンセミコンダクター・トレーディング・リミテッド | 半導体ウエハおよびその製造方法 |
| JP4697258B2 (ja) | 2008-05-09 | 2011-06-08 | ソニー株式会社 | 固体撮像装置と電子機器 |
| JP2010010372A (ja) * | 2008-06-26 | 2010-01-14 | Fujitsu Microelectronics Ltd | 電子装置及びその製造方法 |
| JP2011023481A (ja) * | 2009-07-14 | 2011-02-03 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2012151187A (ja) * | 2011-01-17 | 2012-08-09 | Toshiba Corp | 半導体記憶装置の製造方法 |
-
2011
- 2011-02-09 JP JP2011026348A patent/JP5839807B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-27 US US13/360,456 patent/US8679922B2/en not_active Expired - Fee Related
- 2012-02-09 CN CN201210027912.9A patent/CN102637707B/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501487A (zh) * | 2002-11-15 | 2004-06-02 | ������������ʽ���� | 半导体装置及其制造方法 |
| CN101034709A (zh) * | 2006-03-10 | 2007-09-12 | 株式会社日立制作所 | 高耐压半导体集成电路装置、电介质分离型半导体装置 |
| CN101145560A (zh) * | 2006-09-15 | 2008-03-19 | 株式会社东芝 | 半导体器件及其制造方法 |
| JP2008235689A (ja) * | 2007-03-22 | 2008-10-02 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| CN101924136A (zh) * | 2009-06-11 | 2010-12-22 | 夏普株式会社 | 半导体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637707A (zh) | 2012-08-15 |
| US8679922B2 (en) | 2014-03-25 |
| JP5839807B2 (ja) | 2016-01-06 |
| JP2012164942A (ja) | 2012-08-30 |
| US20120202309A1 (en) | 2012-08-09 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141015 Termination date: 20220209 |
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| CF01 | Termination of patent right due to non-payment of annual fee |