JP5837697B2 - 太径ワイヤ又はストリップに接するための金属成形体を備えたパワー半導体チップ及びその製造方法 - Google Patents

太径ワイヤ又はストリップに接するための金属成形体を備えたパワー半導体チップ及びその製造方法 Download PDF

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JP5837697B2
JP5837697B2 JP2014533780A JP2014533780A JP5837697B2 JP 5837697 B2 JP5837697 B2 JP 5837697B2 JP 2014533780 A JP2014533780 A JP 2014533780A JP 2014533780 A JP2014533780 A JP 2014533780A JP 5837697 B2 JP5837697 B2 JP 5837697B2
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power semiconductor
semiconductor chip
molded body
potential
bonding
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JP2014532308A (ja
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ベッカー,マルティン
アイゼレ,ロナルト
オステルヴァルト,フランク
ルヅキ,ヤーチェク
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ダンフォス・シリコン・パワー・ゲーエムベーハー
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    • H01L2224/85001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2014533780A 2011-10-15 2012-09-10 太径ワイヤ又はストリップに接するための金属成形体を備えたパワー半導体チップ及びその製造方法 Active JP5837697B2 (ja)

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PCT/EP2012/003787 WO2013053420A1 (fr) 2011-10-15 2012-09-10 Puce de semi-conducteur de puissance dotée de corps moulés métalliques pour la mise en contact électrique avec de gros fils ou des bandelettes, et procédé de production

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EP2766922A1 (fr) 2014-08-20
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JP2014532308A (ja) 2014-12-04
US20160225738A1 (en) 2016-08-04
US9318421B2 (en) 2016-04-19
WO2013053420A1 (fr) 2013-04-18
US9613929B2 (en) 2017-04-04
CN103890924A (zh) 2014-06-25
US20140225247A1 (en) 2014-08-14

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