JP5837339B2 - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置 Download PDF

Info

Publication number
JP5837339B2
JP5837339B2 JP2011136474A JP2011136474A JP5837339B2 JP 5837339 B2 JP5837339 B2 JP 5837339B2 JP 2011136474 A JP2011136474 A JP 2011136474A JP 2011136474 A JP2011136474 A JP 2011136474A JP 5837339 B2 JP5837339 B2 JP 5837339B2
Authority
JP
Japan
Prior art keywords
solder
solder ball
semiconductor device
support plate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011136474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013004865A5 (https=
JP2013004865A (ja
Inventor
功一 田中
功一 田中
倉嶋 信幸
信幸 倉嶋
肇 飯塚
肇 飯塚
鉄也 小山
鉄也 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2011136474A priority Critical patent/JP5837339B2/ja
Priority to US13/526,821 priority patent/US8736053B2/en
Publication of JP2013004865A publication Critical patent/JP2013004865A/ja
Publication of JP2013004865A5 publication Critical patent/JP2013004865A5/ja
Application granted granted Critical
Publication of JP5837339B2 publication Critical patent/JP5837339B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2011136474A 2011-06-20 2011-06-20 半導体装置の製造方法及び半導体装置 Active JP5837339B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011136474A JP5837339B2 (ja) 2011-06-20 2011-06-20 半導体装置の製造方法及び半導体装置
US13/526,821 US8736053B2 (en) 2011-06-20 2012-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011136474A JP5837339B2 (ja) 2011-06-20 2011-06-20 半導体装置の製造方法及び半導体装置

Publications (3)

Publication Number Publication Date
JP2013004865A JP2013004865A (ja) 2013-01-07
JP2013004865A5 JP2013004865A5 (https=) 2014-07-24
JP5837339B2 true JP5837339B2 (ja) 2015-12-24

Family

ID=47353038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011136474A Active JP5837339B2 (ja) 2011-06-20 2011-06-20 半導体装置の製造方法及び半導体装置

Country Status (2)

Country Link
US (1) US8736053B2 (https=)
JP (1) JP5837339B2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114173A (ja) * 2010-11-23 2012-06-14 Shinko Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
US8928134B2 (en) 2012-12-28 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package bonding structure and method for forming the same
US9305853B2 (en) 2013-08-30 2016-04-05 Apple Inc. Ultra fine pitch PoP coreless package
US9613933B2 (en) 2014-03-05 2017-04-04 Intel Corporation Package structure to enhance yield of TMI interconnections
CN106030783B (zh) * 2014-03-27 2019-06-18 英特尔公司 用于低温附接的混合互连
US10236267B2 (en) * 2014-08-01 2019-03-19 Kyocera International, Inc. Methods of forming flip chip systems
JP6319026B2 (ja) * 2014-09-29 2018-05-09 日亜化学工業株式会社 発光装置及びその製造方法
US10231338B2 (en) 2015-06-24 2019-03-12 Intel Corporation Methods of forming trenches in packages structures and structures formed thereby
KR102420126B1 (ko) 2016-02-01 2022-07-12 삼성전자주식회사 반도체 소자
TWI602275B (zh) * 2016-10-14 2017-10-11 恆勁科技股份有限公司 封裝結構及其製作方法
US10804115B2 (en) 2017-08-03 2020-10-13 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541153B2 (en) * 2017-08-03 2020-01-21 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541209B2 (en) * 2017-08-03 2020-01-21 General Electric Company Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof
CN116403973B (zh) * 2023-04-23 2025-01-17 长鑫存储技术有限公司 封装叠层结构及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
JP4831502B2 (ja) * 2008-09-25 2011-12-07 日立金属株式会社 耐落下衝撃特性に優れた接続端子用ボールおよび接続端子ならびに電子部品
JP5214554B2 (ja) * 2009-07-30 2013-06-19 ラピスセミコンダクタ株式会社 半導体チップ内蔵パッケージ及びその製造方法、並びに、パッケージ・オン・パッケージ型半導体装置及びその製造方法
KR20120109524A (ko) * 2009-11-27 2012-10-08 스미또모 베이크라이트 가부시키가이샤 전자 장치의 제조 방법, 전자 장치, 전자 장치 패키지의 제조 방법, 전자 장치 패키지

Also Published As

Publication number Publication date
JP2013004865A (ja) 2013-01-07
US8736053B2 (en) 2014-05-27
US20120319274A1 (en) 2012-12-20

Similar Documents

Publication Publication Date Title
JP5837339B2 (ja) 半導体装置の製造方法及び半導体装置
US8039761B2 (en) Printed circuit board with solder bump on solder pad and flow preventing dam
US8671564B2 (en) Substrate for flip chip bonding and method of fabricating the same
CN101404258B (zh) 制造晶片级封装的方法
US7727877B2 (en) Method of manufacturing a wafer level package that uses the same seed layer for selectively electroplating a rewiring pattern and a conductive pillar
KR20100060968A (ko) 메탈 포스트를 구비한 기판 및 그 제조방법
CN103794515B (zh) 芯片封装基板和结构及其制作方法
CN102254876A (zh) 半导体装置及半导体装置单元
CN106206554A (zh) 半导体元件的堆叠结构
CN104425432A (zh) 半导体装置
JP2017163027A (ja) 配線基板、半導体装置及び配線基板の製造方法
US20120126423A1 (en) Semiconductor device manufacturing method and semiconductor device
US8486760B2 (en) Method of manufacturing substrate for flip chip and substrate for flip chip manufactured using the same
EP3971963A1 (en) Semiconductor package assembly
CN204481016U (zh) 集成电路封装基板
KR101153675B1 (ko) 인쇄회로기판 및 인쇄회로기판의 제조 방법
KR101069980B1 (ko) 솔더 범프 형성 방법
KR101060791B1 (ko) 솔더 범프 제조방법
KR20110013902A (ko) 패키지 및 그 제조방법
CN109427714B (zh) 半导体封装及其制造方法
KR20160032524A (ko) 인쇄회로기판 및 그 제조방법
JP5934057B2 (ja) プリント回路基板
KR100986294B1 (ko) 인쇄회로기판의 제조방법
KR20130088347A (ko) 인쇄회로기판 및 그의 제조방법
KR20090099288A (ko) 인쇄회로기판 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150807

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150818

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150929

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151027

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151105

R150 Certificate of patent or registration of utility model

Ref document number: 5837339

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150