JP5835890B2 - 素子間分離層の形成方法 - Google Patents
素子間分離層の形成方法 Download PDFInfo
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- JP5835890B2 JP5835890B2 JP2010285660A JP2010285660A JP5835890B2 JP 5835890 B2 JP5835890 B2 JP 5835890B2 JP 2010285660 A JP2010285660 A JP 2010285660A JP 2010285660 A JP2010285660 A JP 2010285660A JP 5835890 B2 JP5835890 B2 JP 5835890B2
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- polishing
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- oxide film
- abrasive
- buried oxide
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- 238000000034 method Methods 0.000 title claims description 49
- 238000002955 isolation Methods 0.000 title claims description 34
- 238000005498 polishing Methods 0.000 claims description 120
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 59
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 59
- 150000004767 nitrides Chemical class 0.000 claims description 42
- 239000002002 slurry Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 36
- 239000002612 dispersion medium Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 205
- 238000007517 polishing process Methods 0.000 description 36
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000007423 decrease Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Description
12 パッド酸化膜
13 Si3N4膜
14 トレンチ
15 トレンチ内酸化膜
16 埋め込み酸化膜
20 素子間分離層
Claims (5)
- 半導体基板の表面上にパッド酸化膜及び窒化膜を順次形成する工程と、
前記パッド酸化膜及び窒化膜を貫通し、前記半導体基板内部に到達するトレンチを形成する工程と、
前記トレンチを充填し且つ前記窒化膜を覆うように埋め込み酸化膜を形成する工程と、
前記窒化膜上に前記埋め込み酸化膜が残存するように第1の研磨材を用いて前記埋め込み酸化膜を研磨する工程と、
前記第1の研磨材の前記窒化膜に対する前記埋め込み酸化膜の研磨選択比よりも大なる研磨選択比を備える第2の研磨材を用いて前記埋め込み酸化膜を研磨し、前記窒化膜を露出させるとともに前記窒化膜及び前記埋め込み酸化膜の露出面を平坦化する工程と、
前記第2の研磨材を用いて前記埋め込み酸化膜を研磨する工程中において、前記第2の研磨材の供給を一時的に停止して水又は洗浄液を供給しつつ前記埋め込み酸化膜を研磨し、前記埋め込み酸化膜上の前記第2の研磨材を除去する工程と、を有し、
前記第2の研磨材を除去する工程を、前記第2の研磨材を用いて前記埋め込み酸化膜を研磨する工程中に、複数回行うことを特徴とする素子間分離層の形成方法。 - 前記第1の研磨材を用いた研磨工程の研磨速度は、前記第2の研磨材を用いた研磨工程の研磨速度よりも大なることを特徴とする請求項1に記載の形成方法。
- 前記第1の研磨材は分散媒のセリア粒子に対する混合比が0.5未満のセリアスラリであり、前記第2の研磨材は前記混合比が0.5以上のセリアスラリであることを特徴とする請求項2に記載の形成方法。
- 前記第1の研磨材はシリカスラリであり、前記第2の研磨材は分散媒のセリア粒子に対する混合比が0.5以上のセリアスラリであることを特徴とする請求項2に記載の形成方法。
- 前記埋め込み酸化膜の一部、前記パッド酸化膜及び前記窒化膜を除去して前記半導体基板の表面を平坦化する工程と、更に有することを特徴とする請求項1乃至4のいずれか1に記載の素子間分離層の形成方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010285660A JP5835890B2 (ja) | 2010-12-22 | 2010-12-22 | 素子間分離層の形成方法 |
US13/324,087 US20120164815A1 (en) | 2010-12-22 | 2011-12-13 | Method of forming element isolation layer |
CN201110434910.7A CN102610509B (zh) | 2010-12-22 | 2011-12-22 | 元件间分离层的形成方法 |
Applications Claiming Priority (1)
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JP2010285660A JP5835890B2 (ja) | 2010-12-22 | 2010-12-22 | 素子間分離層の形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012134343A JP2012134343A (ja) | 2012-07-12 |
JP5835890B2 true JP5835890B2 (ja) | 2015-12-24 |
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JP2010285660A Active JP5835890B2 (ja) | 2010-12-22 | 2010-12-22 | 素子間分離層の形成方法 |
Country Status (2)
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US (1) | US20120164815A1 (ja) |
JP (1) | JP5835890B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102463863B1 (ko) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3161425B2 (ja) * | 1998-09-09 | 2001-04-25 | 日本電気株式会社 | Stiの形成方法 |
JP3725357B2 (ja) * | 1999-02-24 | 2005-12-07 | 日立化成工業株式会社 | 素子分離形成方法 |
KR100457743B1 (ko) * | 2002-05-17 | 2004-11-18 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 및 이를 이용한 반도체 소자의형성 방법 |
JP4062977B2 (ja) * | 2002-06-04 | 2008-03-19 | 日立化成工業株式会社 | 研磨剤及び基板の研磨方法 |
CN1748292B (zh) * | 2002-12-31 | 2010-09-01 | 三菱住友硅晶株式会社 | 化学机械研磨用浆料组合物、利用它的半导体元件的表面平坦化方法以及浆料组合物的选择比控制方法 |
JP2004228519A (ja) * | 2003-01-27 | 2004-08-12 | Elpida Memory Inc | 半導体装置、及びその製造方法 |
JP2005203394A (ja) * | 2004-01-13 | 2005-07-28 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2007019428A (ja) * | 2005-07-11 | 2007-01-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2007059661A (ja) * | 2005-08-25 | 2007-03-08 | Sony Corp | 研磨方法および研磨装置 |
JP2008021704A (ja) * | 2006-07-11 | 2008-01-31 | Nec Electronics Corp | 半導体装置の製造方法 |
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2010
- 2010-12-22 JP JP2010285660A patent/JP5835890B2/ja active Active
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2011
- 2011-12-13 US US13/324,087 patent/US20120164815A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120164815A1 (en) | 2012-06-28 |
CN102610509A (zh) | 2012-07-25 |
JP2012134343A (ja) | 2012-07-12 |
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