JP5822356B2 - シリコンウェーハ用研磨液組成物 - Google Patents

シリコンウェーハ用研磨液組成物 Download PDF

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Publication number
JP5822356B2
JP5822356B2 JP2012094240A JP2012094240A JP5822356B2 JP 5822356 B2 JP5822356 B2 JP 5822356B2 JP 2012094240 A JP2012094240 A JP 2012094240A JP 2012094240 A JP2012094240 A JP 2012094240A JP 5822356 B2 JP5822356 B2 JP 5822356B2
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JP
Japan
Prior art keywords
weight
polishing
silicon wafer
structural unit
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2012094240A
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English (en)
Japanese (ja)
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JP2013222863A5 (enExample
JP2013222863A (ja
Inventor
穣史 三浦
穣史 三浦
芳明 松井
芳明 松井
佑樹 加藤
佑樹 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012094240A priority Critical patent/JP5822356B2/ja
Application filed by Kao Corp filed Critical Kao Corp
Priority to EP13778433.6A priority patent/EP2840591B1/en
Priority to PCT/JP2013/061326 priority patent/WO2013157554A1/ja
Priority to KR1020147031669A priority patent/KR101639505B1/ko
Priority to CN201380020648.9A priority patent/CN104272439B/zh
Priority to US14/394,985 priority patent/US20150111383A1/en
Priority to TW102113682A priority patent/TWI555831B/zh
Publication of JP2013222863A publication Critical patent/JP2013222863A/ja
Publication of JP2013222863A5 publication Critical patent/JP2013222863A5/ja
Application granted granted Critical
Publication of JP5822356B2 publication Critical patent/JP5822356B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012094240A 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物 Active JP5822356B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物
PCT/JP2013/061326 WO2013157554A1 (ja) 2012-04-17 2013-04-16 シリコンウェーハ用研磨液組成物
KR1020147031669A KR101639505B1 (ko) 2012-04-17 2013-04-16 실리콘 웨이퍼용 연마액 조성물
CN201380020648.9A CN104272439B (zh) 2012-04-17 2013-04-16 硅晶圆用研磨液组合物
EP13778433.6A EP2840591B1 (en) 2012-04-17 2013-04-16 Method for polishing a silicon wafer
US14/394,985 US20150111383A1 (en) 2012-04-17 2013-04-16 Composition for silicon wafer polishing liquid
TW102113682A TWI555831B (zh) 2012-04-17 2013-04-17 Silicon wafer polishing composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012094240A JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物

Publications (3)

Publication Number Publication Date
JP2013222863A JP2013222863A (ja) 2013-10-28
JP2013222863A5 JP2013222863A5 (enExample) 2015-07-16
JP5822356B2 true JP5822356B2 (ja) 2015-11-24

Family

ID=49383510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012094240A Active JP5822356B2 (ja) 2012-04-17 2012-04-17 シリコンウェーハ用研磨液組成物

Country Status (7)

Country Link
US (1) US20150111383A1 (enExample)
EP (1) EP2840591B1 (enExample)
JP (1) JP5822356B2 (enExample)
KR (1) KR101639505B1 (enExample)
CN (1) CN104272439B (enExample)
TW (1) TWI555831B (enExample)
WO (1) WO2013157554A1 (enExample)

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JP6168984B2 (ja) * 2013-12-24 2017-07-26 花王株式会社 シリコンウェーハ用研磨液組成物
JP5859054B2 (ja) * 2014-04-14 2016-02-10 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
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Also Published As

Publication number Publication date
TW201346017A (zh) 2013-11-16
EP2840591A4 (en) 2016-01-20
CN104272439B (zh) 2016-12-21
EP2840591A1 (en) 2015-02-25
KR20150002797A (ko) 2015-01-07
CN104272439A (zh) 2015-01-07
EP2840591B1 (en) 2020-01-01
TWI555831B (zh) 2016-11-01
WO2013157554A1 (ja) 2013-10-24
KR101639505B1 (ko) 2016-07-13
US20150111383A1 (en) 2015-04-23
JP2013222863A (ja) 2013-10-28

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