JP5792986B2 - 表面処理装置および表面処理方法 - Google Patents
表面処理装置および表面処理方法 Download PDFInfo
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- JP5792986B2 JP5792986B2 JP2011094980A JP2011094980A JP5792986B2 JP 5792986 B2 JP5792986 B2 JP 5792986B2 JP 2011094980 A JP2011094980 A JP 2011094980A JP 2011094980 A JP2011094980 A JP 2011094980A JP 5792986 B2 JP5792986 B2 JP 5792986B2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 21
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
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- 229910052786 argon Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011094980A JP5792986B2 (ja) | 2011-04-21 | 2011-04-21 | 表面処理装置および表面処理方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011094980A JP5792986B2 (ja) | 2011-04-21 | 2011-04-21 | 表面処理装置および表面処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012224925A JP2012224925A (ja) | 2012-11-15 |
| JP2012224925A5 JP2012224925A5 (enExample) | 2014-05-29 |
| JP5792986B2 true JP5792986B2 (ja) | 2015-10-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011094980A Expired - Fee Related JP5792986B2 (ja) | 2011-04-21 | 2011-04-21 | 表面処理装置および表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5792986B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6318430B2 (ja) * | 2014-06-02 | 2018-05-09 | 地方独立行政法人山口県産業技術センター | 複合硬質皮膜部材及びその製造方法 |
| JP2018031334A (ja) | 2016-08-26 | 2018-03-01 | 三菱重工コンプレッサ株式会社 | 積層構造、及び、積層構造を有する機械部品 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3384490B2 (ja) * | 1990-06-04 | 2003-03-10 | ティーディーケイ株式会社 | 高周波プラズマｃｖｄ法による炭素膜の形成法 |
| JP3038828B2 (ja) * | 1990-07-19 | 2000-05-08 | 株式会社ダイヘン | プラズマ処理方法 |
| JP3341846B2 (ja) * | 1991-04-04 | 2002-11-05 | 住友電気工業株式会社 | イオン窒化〜セラミックスコーティング連続処理方法 |
| JP3143252B2 (ja) * | 1993-02-24 | 2001-03-07 | 三菱電機株式会社 | 硬質炭素薄膜形成装置およびその形成方法 |
| JP3119172B2 (ja) * | 1995-09-13 | 2000-12-18 | 日新電機株式会社 | プラズマｃｖｄ法及び装置 |
| JP3445559B2 (ja) * | 2000-07-10 | 2003-09-08 | 株式会社半導体エネルギー研究所 | 無定形炭素膜の作製方法 |
| JP3236602B2 (ja) * | 2000-08-11 | 2001-12-10 | 株式会社半導体エネルギー研究所 | 炭素または炭素を主成分とする被膜の形成方法 |
| JP2002217168A (ja) * | 2001-01-15 | 2002-08-02 | Nec Corp | プラズマ処理方法 |
| JP2004277800A (ja) * | 2003-03-14 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 炭素薄膜成膜方法および成膜装置 |
| JP4840655B2 (ja) * | 2006-08-08 | 2011-12-21 | 地方独立行政法人山口県産業技術センター | プラズマ処理装置及び基材の表面処理方法 |
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- 2011-04-21 JP JP2011094980A patent/JP5792986B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2012224925A (ja) | 2012-11-15 |
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