JP5790387B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5790387B2
JP5790387B2 JP2011221519A JP2011221519A JP5790387B2 JP 5790387 B2 JP5790387 B2 JP 5790387B2 JP 2011221519 A JP2011221519 A JP 2011221519A JP 2011221519 A JP2011221519 A JP 2011221519A JP 5790387 B2 JP5790387 B2 JP 5790387B2
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JP
Japan
Prior art keywords
region
type
gate electrode
type well
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011221519A
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English (en)
Japanese (ja)
Other versions
JP2013084644A5 (enExample
JP2013084644A (ja
Inventor
山口　晃央
晃央 山口
吉田　英司
英司 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2011221519A priority Critical patent/JP5790387B2/ja
Priority to US13/644,036 priority patent/US8675383B2/en
Publication of JP2013084644A publication Critical patent/JP2013084644A/ja
Publication of JP2013084644A5 publication Critical patent/JP2013084644A5/ja
Application granted granted Critical
Publication of JP5790387B2 publication Critical patent/JP5790387B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

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  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP2011221519A 2011-10-06 2011-10-06 半導体装置 Expired - Fee Related JP5790387B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011221519A JP5790387B2 (ja) 2011-10-06 2011-10-06 半導体装置
US13/644,036 US8675383B2 (en) 2011-10-06 2012-10-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011221519A JP5790387B2 (ja) 2011-10-06 2011-10-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2013084644A JP2013084644A (ja) 2013-05-09
JP2013084644A5 JP2013084644A5 (enExample) 2014-08-21
JP5790387B2 true JP5790387B2 (ja) 2015-10-07

Family

ID=48041972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011221519A Expired - Fee Related JP5790387B2 (ja) 2011-10-06 2011-10-06 半導体装置

Country Status (2)

Country Link
US (1) US8675383B2 (enExample)
JP (1) JP5790387B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102399465B1 (ko) * 2015-10-23 2022-05-18 삼성전자주식회사 로직 반도체 소자
JP6501695B2 (ja) * 2015-11-13 2019-04-17 ルネサスエレクトロニクス株式会社 半導体装置
TWI698873B (zh) * 2017-03-28 2020-07-11 聯華電子股份有限公司 半導體記憶元件
US11737253B2 (en) 2017-06-22 2023-08-22 Intel Corporation Uniform layouts for SRAM and register file bit cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3560480B2 (ja) 1998-10-05 2004-09-02 シャープ株式会社 スタティック・ランダム・アクセスメモリ
JP3981798B2 (ja) * 1999-04-16 2007-09-26 セイコーエプソン株式会社 半導体記憶装置及びその製造方法
JP4038351B2 (ja) 2001-05-29 2008-01-23 株式会社東芝 半導体記憶装置
US7532501B2 (en) * 2005-06-02 2009-05-12 International Business Machines Corporation Semiconductor device including back-gated transistors and method of fabricating the device
JP2009110594A (ja) * 2007-10-30 2009-05-21 Kobe Univ 半導体記憶装置
JP6025316B2 (ja) * 2011-10-07 2016-11-16 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
US20130088908A1 (en) 2013-04-11
US8675383B2 (en) 2014-03-18
JP2013084644A (ja) 2013-05-09

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