JP2013084644A5 - - Google Patents
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- Publication number
- JP2013084644A5 JP2013084644A5 JP2011221519A JP2011221519A JP2013084644A5 JP 2013084644 A5 JP2013084644 A5 JP 2013084644A5 JP 2011221519 A JP2011221519 A JP 2011221519A JP 2011221519 A JP2011221519 A JP 2011221519A JP 2013084644 A5 JP2013084644 A5 JP 2013084644A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- sram
- type well
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221519A JP5790387B2 (ja) | 2011-10-06 | 2011-10-06 | 半導体装置 |
| US13/644,036 US8675383B2 (en) | 2011-10-06 | 2012-10-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221519A JP5790387B2 (ja) | 2011-10-06 | 2011-10-06 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013084644A JP2013084644A (ja) | 2013-05-09 |
| JP2013084644A5 true JP2013084644A5 (enExample) | 2014-08-21 |
| JP5790387B2 JP5790387B2 (ja) | 2015-10-07 |
Family
ID=48041972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011221519A Expired - Fee Related JP5790387B2 (ja) | 2011-10-06 | 2011-10-06 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8675383B2 (enExample) |
| JP (1) | JP5790387B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102399465B1 (ko) * | 2015-10-23 | 2022-05-18 | 삼성전자주식회사 | 로직 반도체 소자 |
| JP6501695B2 (ja) * | 2015-11-13 | 2019-04-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| TWI698873B (zh) * | 2017-03-28 | 2020-07-11 | 聯華電子股份有限公司 | 半導體記憶元件 |
| WO2018236377A1 (en) | 2017-06-22 | 2018-12-27 | Intel Corporation | Uniform layouts for sram and register file bit cells |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3560480B2 (ja) | 1998-10-05 | 2004-09-02 | シャープ株式会社 | スタティック・ランダム・アクセスメモリ |
| JP3981798B2 (ja) * | 1999-04-16 | 2007-09-26 | セイコーエプソン株式会社 | 半導体記憶装置及びその製造方法 |
| JP4038351B2 (ja) | 2001-05-29 | 2008-01-23 | 株式会社東芝 | 半導体記憶装置 |
| US7532501B2 (en) * | 2005-06-02 | 2009-05-12 | International Business Machines Corporation | Semiconductor device including back-gated transistors and method of fabricating the device |
| JP2009110594A (ja) * | 2007-10-30 | 2009-05-21 | Kobe Univ | 半導体記憶装置 |
| JP6025316B2 (ja) * | 2011-10-07 | 2016-11-16 | キヤノン株式会社 | 光電変換装置 |
-
2011
- 2011-10-06 JP JP2011221519A patent/JP5790387B2/ja not_active Expired - Fee Related
-
2012
- 2012-10-03 US US13/644,036 patent/US8675383B2/en active Active
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