JP5773939B2 - 欠陥検査装置および欠陥検査方法 - Google Patents

欠陥検査装置および欠陥検査方法 Download PDF

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Publication number
JP5773939B2
JP5773939B2 JP2012102819A JP2012102819A JP5773939B2 JP 5773939 B2 JP5773939 B2 JP 5773939B2 JP 2012102819 A JP2012102819 A JP 2012102819A JP 2012102819 A JP2012102819 A JP 2012102819A JP 5773939 B2 JP5773939 B2 JP 5773939B2
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Japan
Prior art keywords
light
sample
reflected
scattered
detection
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Expired - Fee Related
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JP2012102819A
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Japanese (ja)
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JP2013231631A5 (enExample
JP2013231631A (ja
Inventor
本田　敏文
敏文 本田
雄太 浦野
雄太 浦野
神宮　孝広
孝広 神宮
浜松　玲
玲 浜松
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2012102819A priority Critical patent/JP5773939B2/ja
Priority to US14/396,908 priority patent/US9329136B2/en
Priority to PCT/JP2013/062139 priority patent/WO2013161912A1/ja
Priority to KR1020147029604A priority patent/KR20140136054A/ko
Publication of JP2013231631A publication Critical patent/JP2013231631A/ja
Publication of JP2013231631A5 publication Critical patent/JP2013231631A5/ja
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Publication of JP5773939B2 publication Critical patent/JP5773939B2/ja
Priority to US15/088,673 priority patent/US9568439B2/en
Priority to US15/387,786 priority patent/US9645094B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0474—Diffusers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous
    • G01N2201/0683—Brewster plate; polarisation controlling elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/069—Supply of sources
    • G01N2201/0696—Pulsed
    • G01N2201/0697—Pulsed lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2012102819A 2012-04-27 2012-04-27 欠陥検査装置および欠陥検査方法 Expired - Fee Related JP5773939B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012102819A JP5773939B2 (ja) 2012-04-27 2012-04-27 欠陥検査装置および欠陥検査方法
US14/396,908 US9329136B2 (en) 2012-04-27 2013-04-24 Defect inspection device and defect inspection method
PCT/JP2013/062139 WO2013161912A1 (ja) 2012-04-27 2013-04-24 欠陥検査装置および欠陥検査方法
KR1020147029604A KR20140136054A (ko) 2012-04-27 2013-04-24 결함 검사 장치 및 결함 검사 방법
US15/088,673 US9568439B2 (en) 2012-04-27 2016-04-01 Defect inspection device and defect inspection method
US15/387,786 US9645094B2 (en) 2012-04-27 2016-12-22 Defect inspection device and defect inspection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012102819A JP5773939B2 (ja) 2012-04-27 2012-04-27 欠陥検査装置および欠陥検査方法

Publications (3)

Publication Number Publication Date
JP2013231631A JP2013231631A (ja) 2013-11-14
JP2013231631A5 JP2013231631A5 (enExample) 2014-03-13
JP5773939B2 true JP5773939B2 (ja) 2015-09-02

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Country Link
US (3) US9329136B2 (enExample)
JP (1) JP5773939B2 (enExample)
KR (1) KR20140136054A (enExample)
WO (1) WO2013161912A1 (enExample)

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JP6553412B2 (ja) * 2015-05-29 2019-07-31 リコーエレメックス株式会社 検査システム
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WO2017122320A1 (ja) * 2016-01-14 2017-07-20 株式会社日立ハイテクノロジーズ 検査装置及び検出器
JP7134096B2 (ja) * 2016-06-02 2022-09-09 東京エレクトロン株式会社 基板検査方法、装置及びシステム
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TWI616653B (zh) * 2016-11-11 2018-03-01 台灣積體電路製造股份有限公司 光學檢測裝置及其檢測方法
CN106596581B (zh) * 2016-11-18 2019-04-30 哈尔滨工业大学 测量表面形貌检测多层薄膜层间内部缺陷的方法
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KR102650697B1 (ko) 2018-12-04 2024-03-25 삼성전자주식회사 반도체 웨이퍼 검사 방법 및 시스템, 및 이를 이용한 반도체 소자의 제조 방법
WO2020136785A1 (ja) 2018-12-27 2020-07-02 株式会社日立ハイテク 欠陥検査装置および検査方法並びに光学モジュール
CN110118817B (zh) * 2019-05-31 2024-07-16 云谷（固安）科技有限公司 导线检测装置及其检测方法
CN113167462A (zh) * 2019-07-19 2021-07-23 高科技器械私人有限公司 光学系统和照射样品平面的方法
US12313566B2 (en) 2019-08-02 2025-05-27 Hitachi High-Tech Corporation Defect inspection device and defect inspection method
WO2021199397A1 (ja) * 2020-04-02 2021-10-07 株式会社日立ハイテク 欠陥検査装置および欠陥検査方法
CN111811441B (zh) * 2020-06-19 2023-03-21 广东电网有限责任公司 一种表面施工工艺检测装置及方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12146840B2 (en) 2020-06-09 2024-11-19 Hitachi High-Tech Corporation Defect inspection device

Also Published As

Publication number Publication date
US9645094B2 (en) 2017-05-09
US20170102339A1 (en) 2017-04-13
JP2013231631A (ja) 2013-11-14
US9329136B2 (en) 2016-05-03
US9568439B2 (en) 2017-02-14
US20160216217A1 (en) 2016-07-28
KR20140136054A (ko) 2014-11-27
WO2013161912A1 (ja) 2013-10-31
US20150146200A1 (en) 2015-05-28

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