JP5767364B2 - 光起電性パネル製造用の複合材ゲッター - Google Patents
光起電性パネル製造用の複合材ゲッター Download PDFInfo
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- JP5767364B2 JP5767364B2 JP2014096159A JP2014096159A JP5767364B2 JP 5767364 B2 JP5767364 B2 JP 5767364B2 JP 2014096159 A JP2014096159 A JP 2014096159A JP 2014096159 A JP2014096159 A JP 2014096159A JP 5767364 B2 JP5767364 B2 JP 5767364B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Sealing Material Composition (AREA)
Description
以下に、本願発明に関連する発明の実施形態を列挙する。
[実施形態1]
低水分透過率を有するポリマーマトリックス中に分散したH 2 O吸収剤を含む光起電性パネル用の複合材ゲッターであって、該水分吸収剤が1種またはそれ以上のアルカリ土類金属酸化物から本質的になることを特徴とする複合材ゲッター。
[実施形態2]
前記のポリマーマトリックスが、25℃および60%相対湿度で10gmm・m −2 d −1 未満のH 2 O透過率を有する、実施形態1記載の複合材ゲッター。
[実施形態3]
前記のポリマーマトリックスが170℃未満の溶融温度を有している、実施形態1記載の複合材ゲッター。
[実施形態4]
前記のポリマーマトリックスが0.3N/mm 2 以上のせん断抵抗力を有する、実施形態1記載の複合材ゲッター。
[実施形態5]
前記のポリマーマトリックスを形成する材料が、エチルビニルアセテート(EVA)、低密度ポリエチレン(LDPE)、中密度ポリエチレン(MDPE)および高密度ポリエチレン(HDPE)、ポリエーテルブロックアミド(PEBA)、アイオノマー樹脂、エチレン−アクリル酸共重合体、ポリフッ化ビニリデン(PVDF)、ポリビニルブチラール(PVB)、ポリ塩化ビニリデン(PVDC)、エチレン−プロピレンゴム(EPR)、エチレンプロピレンジエンモノマーゴム(EPDM)ならびにブチルゴムの中から選ばれる、実施形態1記載の複合材ゲッター。
[実施形態6]
前記のポリマーマトリックスがEVAを含む、実施形態5記載の複合材ゲッター。
[実施形態7]
前記のポリマーマトリックスがEPRを含む、実施形態5記載の複合材ゲッター。
[実施形態8]
前記の複合材ゲッター系中のH 2 O吸収剤の質量パーセントが10〜50%の範囲である、実施形態1記載の複合材ゲッター。
[実施形態9]
前記のアルカリ土類金属酸化物がCaO、MgOおよびそれらの組み合わせから選ばれる、実施形態1記載の複合材ゲッター。
[実施形態10]
前記のアルカリゲッター土類金属酸化物がCaOである、実施形態9記載の複合材ゲッター。
[実施形態11]
実施形態1記載の複合材ゲッターを含む光起電性パネル。
[実施形態12]
前記の複合材ゲッターが前記の光起電性パネルの周縁に近接して配置される、実施形態11記載の光起電性パネル。
[実施形態13]
2つの支持体(12、13)で範囲を限定された1つまたはそれ以上の光起電性要素(11)を含む光起電性パネル(10)の製造方法であって、熱封止の過程を経る前に、前記の支持体が、実施形態1記載の複合材ゲッター(15)によって縁部近傍で互いに結合されることを特徴とする、方法。
[実施形態14]
前記の熱封止の処理が100℃〜170℃の範囲の温度で行なわれる、実施形態13記載の方法。
[実施形態15]
前記の熱封止がオートクレーブ中で行われる、実施形態14記載の方法。
[実施形態16]
前記の熱封止が真空ラミネータ中で行われる、実施形態14記載の方法。
Claims (4)
- 少なくとも1つの光起電性要素(11)と、
下方支持体(12)及び上方支持体(13)と、
ポリマーマトリックス中に分散されたH2O吸収剤を含む複合材ゲッター(15、15’)と、
を備えた光起電性パネル(10)であって、
前記H2O吸収剤は、1種又は2種以上のアルカリ土類金属酸化物から本質的に成るものであり、
前記ポリマーマトリックスは、25℃および60%相対湿度で10gmm・m−2d−1未満のH2O透過率を有し、
前記ポリマーを形成する材料は、エチレンビニルアセテート(EVA)及びエチレン−プロピレンゴム(EPR)の中から選択され、
前記光起電性パネル(10)は、前記下方支持体(12)と前記上方支持体(13)と前記複合体ゲッター(15、15’)とによってその範囲が限定されるものであり、
前記光起電性パネル(10)は、前記複合材ゲッター(15、15’)のポリマーマトリックスとは異なるポリマー材料(14)を含み、該ポリマー材料により前記光起電性パネル(10)の内部体積が満たされて、そして前記少なくとも1つの光起電性要素(11)が封入されており、
前記の複合材ゲッター系中のH 2 O吸収剤の質量パーセントが10〜50%の範囲である、
ことを特徴とする、光起電性パネル。 - 請求項1記載の光起電性パネル(10)であって、前記のポリマーマトリックスが170℃未満の溶融温度を有している、光起電性パネル。
- 請求項1記載の光起電性パネル(10)であって、前記のポリマーマトリックスが0.3N/mm2〜15N/mm2のせん断抵抗力を有する、光起電性パネル。
- 請求項1記載の光起電性パネル(10)であって、前記のアルカリ土類金属酸化物がCaO、MgOおよびそれらの組み合わせから選ばれる、光起電性パネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001902A ITMI20071902A1 (it) | 2007-10-04 | 2007-10-04 | Getter composito per la produzione di pannelli solari |
ITMI2007A001902 | 2007-10-04 |
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JP2010527406A Division JP2010541262A (ja) | 2007-10-04 | 2008-09-24 | 光起電性パネル製造用の複合材ゲッター |
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JP2014195095A JP2014195095A (ja) | 2014-10-09 |
JP5767364B2 true JP5767364B2 (ja) | 2015-08-19 |
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JP2010527406A Withdrawn JP2010541262A (ja) | 2007-10-04 | 2008-09-24 | 光起電性パネル製造用の複合材ゲッター |
JP2014096159A Active JP5767364B2 (ja) | 2007-10-04 | 2014-05-07 | 光起電性パネル製造用の複合材ゲッター |
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Country Status (12)
Country | Link |
---|---|
US (2) | US20100308262A1 (ja) |
EP (1) | EP2206161B1 (ja) |
JP (2) | JP2010541262A (ja) |
KR (1) | KR101559080B1 (ja) |
CN (2) | CN101828269A (ja) |
BR (1) | BRPI0817632A2 (ja) |
CA (1) | CA2699619A1 (ja) |
IT (1) | ITMI20071902A1 (ja) |
MY (1) | MY153505A (ja) |
TW (1) | TWI453241B (ja) |
WO (1) | WO2009043776A1 (ja) |
ZA (1) | ZA201002045B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20071902A1 (it) | 2007-10-04 | 2009-04-05 | Getters Spa | Getter composito per la produzione di pannelli solari |
ITMI20081374A1 (it) | 2008-07-25 | 2010-01-26 | Getters Spa | Assorbitore composito di h2o per dispositivi medicali sigillati |
WO2011052580A1 (ja) * | 2009-10-30 | 2011-05-05 | 住友化学株式会社 | 有機光電変換素子及びその製造方法 |
EP2422976B1 (de) * | 2010-07-30 | 2017-03-08 | Ems-Patent Ag | Photovoltaikmodul-Mehrschichtrückfolie sowie deren Herstellung und Verwendung bei der Produktion photovoltaischer Module |
CN101980370B (zh) * | 2010-08-31 | 2012-09-26 | 深圳市创益科技发展有限公司 | 一种无边框的太阳能电池组件及封装方法 |
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- 2008-09-24 US US12/679,280 patent/US20100308262A1/en not_active Abandoned
- 2008-09-24 CN CN200880109847A patent/CN101828269A/zh active Pending
- 2008-09-24 JP JP2010527406A patent/JP2010541262A/ja not_active Withdrawn
- 2008-09-24 KR KR1020107009952A patent/KR101559080B1/ko active IP Right Grant
- 2008-09-24 CA CA2699619A patent/CA2699619A1/en not_active Abandoned
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US20100308262A1 (en) | 2010-12-09 |
EP2206161B1 (en) | 2013-09-18 |
CN104377262A (zh) | 2015-02-25 |
KR101559080B1 (ko) | 2015-10-08 |
CN101828269A (zh) | 2010-09-08 |
CN104377262B (zh) | 2016-06-22 |
CA2699619A1 (en) | 2009-04-09 |
TW200932809A (en) | 2009-08-01 |
US20140332065A1 (en) | 2014-11-13 |
US8906257B2 (en) | 2014-12-09 |
KR20100088674A (ko) | 2010-08-10 |
WO2009043776A1 (en) | 2009-04-09 |
BRPI0817632A2 (pt) | 2015-03-24 |
JP2010541262A (ja) | 2010-12-24 |
MY153505A (en) | 2015-02-27 |
JP2014195095A (ja) | 2014-10-09 |
ITMI20071902A1 (it) | 2009-04-05 |
ZA201002045B (en) | 2010-11-24 |
EP2206161A1 (en) | 2010-07-14 |
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