WO2011052580A1 - 有機光電変換素子及びその製造方法 - Google Patents
有機光電変換素子及びその製造方法 Download PDFInfo
- Publication number
- WO2011052580A1 WO2011052580A1 PCT/JP2010/068955 JP2010068955W WO2011052580A1 WO 2011052580 A1 WO2011052580 A1 WO 2011052580A1 JP 2010068955 W JP2010068955 W JP 2010068955W WO 2011052580 A1 WO2011052580 A1 WO 2011052580A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- conversion element
- layer
- organic photoelectric
- organic
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 claims abstract description 41
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 48
- 239000000126 substance Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 7
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical group [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000292 calcium oxide Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 20
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 147
- 150000001875 compounds Chemical class 0.000 description 55
- 238000000034 method Methods 0.000 description 28
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 22
- 239000007788 liquid Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 229910003472 fullerene Inorganic materials 0.000 description 9
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- -1 polysiloxane Polymers 0.000 description 8
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 6
- 229940126062 Compound A Drugs 0.000 description 6
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000004423 acyloxy group Chemical group 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000004414 alkyl thio group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000004659 aryl alkyl thio group Chemical group 0.000 description 3
- 125000002102 aryl alkyloxo group Chemical group 0.000 description 3
- 125000005110 aryl thio group Chemical group 0.000 description 3
- 125000004104 aryloxy group Chemical group 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000005015 aryl alkynyl group Chemical group 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 125000004149 thio group Chemical group *S* 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 1
- MNDIARAMWBIKFW-UHFFFAOYSA-N 1-bromohexane Chemical compound CCCCCCBr MNDIARAMWBIKFW-UHFFFAOYSA-N 0.000 description 1
- YZWKKMVJZFACSU-UHFFFAOYSA-N 1-bromopentane Chemical compound CCCCCBr YZWKKMVJZFACSU-UHFFFAOYSA-N 0.000 description 1
- VFWCMGCRMGJXDK-UHFFFAOYSA-N 1-chlorobutane Chemical compound CCCCCl VFWCMGCRMGJXDK-UHFFFAOYSA-N 0.000 description 1
- MLRVZFYXUZQSRU-UHFFFAOYSA-N 1-chlorohexane Chemical compound CCCCCCCl MLRVZFYXUZQSRU-UHFFFAOYSA-N 0.000 description 1
- SQCZQTSHSZLZIQ-UHFFFAOYSA-N 1-chloropentane Chemical compound CCCCCCl SQCZQTSHSZLZIQ-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 101000651021 Homo sapiens Splicing factor, arginine/serine-rich 19 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 102100027779 Splicing factor, arginine/serine-rich 19 Human genes 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- ULGYAEQHFNJYML-UHFFFAOYSA-N [AlH3].[Ca] Chemical compound [AlH3].[Ca] ULGYAEQHFNJYML-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000005018 aryl alkenyl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- AQNQQHJNRPDOQV-UHFFFAOYSA-N bromocyclohexane Chemical compound BrC1CCCCC1 AQNQQHJNRPDOQV-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- UNFUYWDGSFDHCW-UHFFFAOYSA-N monochlorocyclohexane Chemical compound ClC1CCCCC1 UNFUYWDGSFDHCW-UHFFFAOYSA-N 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an organic photoelectric conversion element and a manufacturing method thereof.
- organic photoelectric conversion elements Compared with other elements such as inorganic photoelectric conversion elements, organic photoelectric conversion elements have advantages such as a simple structure and easy and inexpensive manufacture such as that they can be manufactured by printing. . However, the inferior photoelectric conversion efficiency has hindered practical use of organic photoelectric conversion elements.
- the organic photoelectric conversion element has an active metal electrode on at least one of the electrodes, and causes electrons or holes to flow through the organic / metal interface. Therefore, when the interface is chemically changed, it becomes an obstacle to charge transfer. Since this chemical change is caused by the reaction of oxygen or water with a metal, it is expected that the lifetime can be extended by removing oxygen and / or water, especially water.
- a substrate having a high barrier property is usually bonded to the organic photoelectric conversion element.
- a light or thermosetting sealant is used for bonding.
- water and oxygen have also entered through the sealant, leading to a reduction in life.
- Patent Document 1 an inorganic sealing layer formed by a vapor deposition method and a surface protective layer made of a resin layer formed on the inorganic sealing layer are stacked on the surface of the organic photoelectric conversion element. It is described that the action of moisture and oxygen can be blocked.
- Patent Document 1 is liable to be deteriorated by ultraviolet light, and has a problem that water and oxygen cannot be sufficiently prevented from entering the element.
- the present invention provides an organic photoelectric conversion element that eliminates deterioration due to ultraviolet light and is excellent in photoelectric conversion efficiency.
- the present invention provides the following [1] to [6].
- An organic photoelectric device comprising an operating part having a pair of electrodes, an active layer located between the pair of electrodes and containing an organic compound, and a sealing layer covering at least a part of the operating part It is a conversion element, Comprising:
- the said sealing layer is an organic photoelectric conversion element containing an oxygen absorptive and / or water absorptive substance.
- the organic photoelectric conversion element according to the above [1], wherein the oxygen-absorbing and / or water-absorbing substance is a metal oxide.
- At least a part of the operation part including a pair of electrodes and an active layer including an organic compound located between the pair of electrodes includes a seal containing an oxygen-absorbing and / or water-absorbing substance.
- the manufacturing method of the organic photoelectric conversion element including covering with a stop layer.
- FIG. 1 is a diagram showing an example of a layer configuration of an organic photoelectric conversion element in the present invention.
- FIG. 2 is a diagram showing another example of the layer configuration of the organic photoelectric conversion element in the present invention.
- FIG. 3 is a diagram showing another example of the layer configuration of the organic photoelectric conversion element in the present invention.
- FIG. 4 is a diagram showing another example of the layer configuration of the organic photoelectric conversion element in the present invention.
- FIG. 5 is a diagram showing another example of the layer configuration of the organic photoelectric conversion element in the present invention.
- FIG. 6 is a graph showing current-voltage characteristics of the organic thin film solar cells of Example 1 and Comparative Example 1.
- FIG. 7 is a graph showing current-voltage characteristics of the organic thin film solar cells of Example 2 and Comparative Example 2.
- the basic configuration of the organic photoelectric conversion element of the present invention is a configuration having a pair of electrodes, an active layer, and a sealing layer. At least one of the pair of electrodes is transparent or translucent.
- the transparent or translucent electrode of the pair of electrodes is usually an anode.
- the electrode that may not be transparent or translucent is usually a cathode.
- the position of the active layer in the organic photoelectric conversion element is usually between a pair of electrodes.
- the active layer may be a single layer or a plurality of layers. A layer other than the active layer may be provided between the pair of electrodes, and this layer may be referred to as an intermediate layer in this specification.
- the active layer is a layer containing an organic compound.
- the organic compound include an electron donating compound (p-type semiconductor) and an electron accepting compound (n-type semiconductor).
- the active layer may be a single layer or a laminate in which a plurality of layers are stacked.
- the active layer is of a so-called pn heterojunction type in which a layer formed of an electron donating compound (electron donating layer) and a layer formed of an electron accepting compound (electron accepting layer) are superimposed.
- a pair of electrodes, an active layer, and an intermediate layer provided as necessary may be collectively referred to as an operation part.
- the sealing layer is a layer that covers at least a part of the operating portion.
- Examples of the form of the sealing layer include a form that surrounds the periphery of the operating part, and a form that covers the surface of one of the electrodes.
- FIGS. 1 to 5 are diagrams showing examples of the layer structure of the organic photoelectric conversion element.
- FIGS. 1 to 5 are diagrams showing examples of the layer structure of the organic photoelectric conversion element.
- a stacked body in which the active layer 40 is sandwiched between the first electrode 32 and the second electrode 34 is mounted on the substrate 20 to constitute the organic photoelectric conversion element 10.
- the substrate 20 is transparent or translucent.
- the surface of the second electrode 34 is covered with a sealing layer 50.
- the first electrode 32 and the second electrode 34 are transparent or translucent.
- the first electrode 32 is transparent or translucent.
- Which of the first electrode 32 and the second electrode 34 is an anode and which is a cathode is not particularly limited.
- the vapor deposition is performed in a later process when the vapor deposition method is used for film formation of the cathode (for example, aluminum).
- the cathode for example, aluminum
- the first electrode 32 is an anode and the second electrode 34 is a cathode.
- the substrate 20 and the first electrode 32 are formed to be transparent or translucent so that the light can be taken from the substrate 20 side.
- the active layer 40 is composed of two layers, a first active layer 42 and a second active layer 44, and is a pn heterojunction type active layer.
- One of the first active layer 42 and the second active layer 44 is an electron accepting layer, and the other layer is an electron donating layer.
- first intermediate layer 52 and a second intermediate layer 54 are provided.
- the first intermediate layer 52 is located between the active layer 40 and the first electrode 32
- the second intermediate layer 54 is located between the active layer 40 and the second electrode 34. Only one of the first intermediate layer 52 and the second intermediate layer 54 may be provided.
- each intermediate layer is depicted as a single layer, but each intermediate layer may be composed of a plurality of layers.
- the intermediate layer may have various functions. Assuming the case where the first electrode 32 is an anode, the first intermediate layer 52 may be, for example, a hole transport layer, an electron blocking layer, a hole injection layer, and a layer having other functions. In this case, the second electrode 34 is a cathode, and the second intermediate layer 54 can be, for example, an electron transport layer, an electron block layer, and a layer having other functions. On the other hand, when the first electrode 32 is a cathode and the second electrode 34 is an anode, the positions of the intermediate layers are also changed accordingly.
- the sealing layer 50 covers not only the second electrode 32 but also the side surfaces of the active layer 40 and the first electrode 32. Thus, the sealing layer 50 may cover the side surface of the operating portion 70.
- the substrate 60 is placed on the sealing layer 50.
- the sealing layer 50 is an adhesive layer and the substrate 60 is bonded.
- an adhesive (not shown) may be interposed between the sealing layer 50 and the substrate 60 to bond them together.
- the organic photoelectric conversion element of the present invention is the organic photoelectric conversion element described above, and the sealing layer is an organic photoelectric conversion element containing an oxygen-absorbing and / or water-absorbing substance.
- oxygen-absorbing and / or water-absorbing substances there are three types of oxygen-absorbing and / or water-absorbing substances: substances that absorb oxygen, substances that absorb water, or substances that absorb oxygen and absorb water. In the present invention, Any of these or a combination of two or more types can be used.
- oxygen-absorbing and / or water-absorbing substances include metal oxides and silica gel.
- the metal oxide include calcium oxide, titanium oxide, aluminum oxide, molybdenum oxide, magnesium oxide, barium oxide and the like. Among these, a metal oxide is preferable and calcium oxide (CaO) is preferable.
- the oxygen-absorbing and / or water-absorbing substance is usually a particle, preferably a particle having a particle size of 1 ⁇ m or less, more preferably a particle having a particle size of 0.5 ⁇ m or less, and a particle size. It is even more preferable that the particle size is 0.1 ⁇ m or less.
- the sealing layer only needs to contain an oxygen-absorbing and / or water-absorbing substance.
- a resin in a form in which an oxygen-absorbing and / or water-absorbing substance is dispersed may be mentioned.
- the resin include an ultraviolet curable resin, a thermosetting resin, and a two-component mixed epoxy resin.
- the ultraviolet curable resin include epoxy resins, polyester resins, and urethane resins. Among these, an ultraviolet curable resin is preferable, and an epoxy resin is more preferable.
- the sealing layer preferably has adhesiveness. Thereby, even if it does not use an adhesive agent, a board
- the material having adhesiveness include ultraviolet curable resins, thermosetting resins, and two-component mixed epoxy resins among the above resins. Among these, an ultraviolet curable resin is preferable, and an epoxy resin is more preferable.
- the thickness of the sealing layer is usually 1 ⁇ m to 500 ⁇ m, preferably 10 ⁇ m to 250 ⁇ m, more preferably 50 ⁇ m to 150 ⁇ m.
- the organic photoelectric conversion element of the present invention includes, in addition to the sealing layer, a pair of electrodes at least one of which is transparent or translucent, and an active layer that is located between the pair of electrodes and contains an organic compound. Having an operating part.
- Examples of the electrode material constituting the transparent or translucent electrode include a conductive metal oxide film and a translucent metal thin film. Specifically, indium oxide, zinc oxide, tin oxide, and a composite of two or more of them (eg, indium tin oxide (ITO), indium zinc oxide (IZO), NESA), etc. Films produced using materials; metal thin films such as gold, platinum, silver, and copper are exemplified, and films produced using conductive materials such as ITO, indium / zinc / oxide, and tin oxide are preferred. Examples of the electrode manufacturing method include a vacuum deposition method, a sputtering method, an ion plating method, a plating method, and the like. Moreover, you may use organic transparent conductive films, such as polyaniline and its derivative (s), polythiophene, and its derivative (s) as an electrode material.
- ITO indium tin oxide
- IZO indium zinc oxide
- NESA a composite of two or more of them
- the electrode paired with the transparent or translucent electrode may be transparent or translucent, but may be transparent or not translucent.
- the electrode material constituting the electrode include metals and conductive polymers. Specific examples of the electrode material include lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like.
- Two or more alloys of the metals include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, and calcium-aluminum alloy.
- the active layer is a layer containing an organic compound.
- the organic compound contained in the active layer may include a combination of an electron donating compound and an electron accepting compound as described above.
- the electron-donating compound and the electron-accepting compound are not particularly limited, and can be determined relatively from the energy level of the energy level of these compounds.
- Examples of the electron donating compound include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, oligothiophene and derivatives thereof, polyvinylcarbazole and derivatives thereof, polysilane and derivatives thereof, and aromatic amines in side chains or main chains. And polysiloxane derivatives, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and derivatives thereof, polythienylene vinylene and derivatives thereof, and the like. Of these, oligothiophene and its derivatives are preferred, and poly (3-hexylthiophene) (P3HT) is more preferred.
- P3HT poly (3-hexylthiophene)
- a compound having a structural unit represented by the following formula (1) is also preferable.
- the compound having a structural unit represented by the formula (1) preferably further has a structural unit represented by the formula (2).
- Ar 1 and Ar 2 are the same or different and represent a trivalent heterocyclic group.
- R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are the same or different and are a hydrogen atom, a halogen atom, an alkyl group, an alkyloxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, Arylalkyl group, arylalkyloxy group, arylalkylthio group, acyl group, acyloxy group, amide group, acid imide group, imino group, amino group, substituted amino group, substituted silyl group, substituted silyloxy group, substituted silylthio group, substituted silylamino Represents a monovalent heterocyclic group, heterocyclic oxy group, heterocyclic thio group, arylalkenyl group, arylalkynyl group, carboxyl group or cyano group.
- R 50 is a hydrogen atom, halogen atom, alkyl group, alkyloxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkyloxy group, arylalkylthio group, acyl group, acyloxy group, amide Group, acid imide group, imino group, amino group, substituted amino group, substituted silyl group, substituted silyloxy group, substituted silylthio group, substituted silylamino group, monovalent heterocyclic group, heterocyclic oxy group, heterocyclic thio group, aryl An alkenyl group, an arylalkynyl group, a carboxyl group or a cyano group is represented.
- R 51 is an alkyl group having 6 or more carbon atoms, an alkyloxy group having 6 or more carbon atoms, an alkylthio group having 6 or more carbon atoms, an aryl group having 6 or more carbon atoms, an aryloxy group having 6 or more carbon atoms, or 6 or more carbon atoms.
- X 1 and Ar 2 are bonded to the adjacent position of the heterocyclic ring contained in Ar 1
- C (R 50 ) (R 51 ) and Ar 1 are bonded to the adjacent position of the heterocyclic ring contained in Ar 2 . .
- a polymer compound having a weight average molecular weight in terms of polystyrene calculated using a standard polystyrene sample is preferably 3000 to 10000000. If the weight average molecular weight is lower than 3000, defects may occur in film formation during device fabrication, and if it exceeds 10000000, solubility in a solvent or applicability during device fabrication may be reduced.
- the weight average molecular weight of the electron donating compound is more preferably 8000 to 5000000, and particularly preferably 10,000 to 1000000.
- the electron donating compounds may be used alone or in combination of two or more.
- Examples of the electron-accepting compound include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, Diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, polyfluorene and its derivatives, fullerenes such as C 60 and its derivatives, bathocuproine, etc.
- Phenanthrene derivatives metal oxides such as titanium oxide, carbon nanotubes, and the like.
- titanium oxide, carbon nanotubes, fullerenes, and fullerene derivatives are preferable, and fullerenes and fullerene derivatives are particularly preferable.
- fullerenes include C 60 fullerene, C 70 fullerene, C 76 fullerene, C 78 fullerene, and C 84 fullerene.
- fullerene derivatives C 60 fullerene derivatives, C 70 fullerene derivatives, C 76 fullerene derivatives, C 78 fullerene derivatives, and C 84 fullerene derivatives.
- Specific examples of the fullerene derivative include the following.
- fullerenes and fullerene derivatives are preferable among the above specific examples, and [5,6] -PCBM and [6,6] -PCBM are more preferable.
- the ratio of the fullerene derivative is preferably 10 to 1000 parts by weight and more preferably 20 to 500 parts by weight with respect to 100 parts by weight of the electron donating compound. .
- the electron-accepting compound is not limited to one type of compound, and two or more types of compounds can be used in combination.
- the material for the intermediate layer examples include alkali metals such as lithium fluoride (LiF), halides and oxides of alkaline earth metals.
- alkali metals such as lithium fluoride (LiF)
- halides and oxides of alkaline earth metals.
- fine particles of inorganic semiconductor such as titanium oxide, PEDOT (poly (3,4) ethylenedioxythiophene) and the like are also exemplified.
- the anode side intermediate layer is preferably PEDOT
- the cathode side intermediate layer is preferably alkali metal (more preferably LiF).
- the organic photoelectric conversion element may have a substrate.
- the substrate may be positioned outside one of the electrodes as in the examples of FIGS. 1 to 4, or the element may be sandwiched between two substrates as in the example of FIG.
- the substrate may be any substrate that does not change chemically when the electrodes are formed and when the organic layer is formed. Examples of the material for the substrate include glass, plastic, polymer film, and silicon.
- the opposite electrode that is, the electrode farther from the substrate of the pair of electrodes
- At least a part of the operation part (a pair of electrodes, an active layer, and an intermediate layer provided as necessary) is made of an oxygen-absorbing and / or water-absorbing substance.
- a method including coating with a sealing layer containing.
- a liquid containing the material of the sealing layer is prepared, and this is a portion where the sealing layer is to be provided (for example, the electrode surface).
- a method of applying, a method of immersing the operating part in the liquid, a spray method and the like are exemplified.
- the substrate may be bonded onto the sealing layer.
- the sealing layer itself from an adhesive material, the sealing layer and the substrate can be more easily bonded.
- a liquid containing a sealing layer material is disposed on a portion of an organic solar cell element to be coated, and a transparent or translucent substrate (for example, glass) is disposed thereon, followed by curing. By irradiating and curing the mercury lamp, a sealing layer is formed.
- an electrode is formed on a substrate, an active layer is formed, and then an electrode is formed on the active layer, and a sealing layer is formed.
- the example to form is given, By this example, the organic photoelectric conversion element illustrated in FIG.1, FIG.2, FIG.4 or FIG. 5 is obtained. Also, an electrode is formed on the substrate, an intermediate layer is formed on the electrode, an active layer is formed as described above, an intermediate layer is then formed on the active layer, and an electrode is further formed on the intermediate layer.
- the organic photoelectric conversion element illustrated in FIG. 3 can be formed by forming a sealing layer.
- Examples of the method for forming the active layer include a method in which a liquid containing an organic compound is prepared and formed into a film.
- the liquid containing the organic compound can be prepared by dissolving the organic compound in a solvent.
- the solvent may be either water or an organic solvent, and is appropriately selected depending on the type of organic compound, that is, the electron donating compound and the electron accepting compound.
- organic solvent examples include toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, unsaturated hydrocarbon solvents such as n-butylbenzene, sec-butylbenzene, tert-butylbenzene, carbon tetrachloride, chloroform, dichloromethane, Halogenated saturated hydrocarbon solvents such as dichloroethane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane and bromocyclohexane, halogenated unsaturated hydrocarbon solvents such as chlorobenzene, dichlorobenzene and trichlorobenzene, tetrahydrofuran And ether solvents such as tetrahydropyran. Of these, halogenated unsaturated hydrocarbon solvents are preferred, dichlorobenz
- the amount of the organic compound added to the solvent is not particularly limited, and an optimal range can be appropriately selected. Usually, it is 0.1% by weight or more, preferably 0.3% by weight or more, more preferably 0.5%. It is the amount which becomes weight% or more.
- the total amount of the electron donating compound and the electron accepting compound is usually 0.2 in the liquid. It is added in an amount of not less than wt%, preferably not less than 0.5 wt%, more preferably not less than 1 wt%. Further, the compounding ratio of the electron donating compound and the electron accepting compound can be usually adjusted to 1 to 20:20 to 1, preferably 1 to 10:10 to 1, more preferably 1 to 5: 5 to 1. .
- the electron donating compound or the electron accepting compound is usually 0.4% by weight or more in the liquid, preferably It is added so as to be 0.6% by weight or more, more preferably 2% by weight or more.
- a liquid containing an organic compound may be filtered. Thereby, the photoelectric conversion efficiency can be further improved.
- the pore size of the filter is usually 10 to 0.1 ⁇ m, preferably 5 to 0.1 ⁇ m, more preferably 0.15 to 0.1 ⁇ m.
- a liquid containing an organic compound may be applied on the electrode or the intermediate layer, and the solvent may be volatilized.
- the coating method include a coating method.
- the coating method spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, gravure printing method, Examples include a flexographic printing method, an offset printing method, an ink jet printing method, a dispenser printing method, a nozzle coating method, and a capillary coating method.
- the spin coating method, flexographic printing method, gravure printing method, ink jet printing method, and dispenser printing method are preferable, and the spin coating method is more preferable.
- an active layer of a bulk heterojunction type
- a liquid containing both an electron-donating compound and an electron-accepting compound is applied on the electrode or the intermediate layer, and the solvent is volatilized.
- an active layer can be formed.
- an organic photoelectric conversion element having an active layer of pn heterojunction for example, a liquid containing an electron donating compound and a liquid containing an electron accepting compound are prepared, and a liquid containing an electron donating compound is prepared. Is applied on the electrode or intermediate layer, and the solvent is volatilized to form an electron donating layer. Subsequently, a liquid containing an electron-accepting compound is applied onto the electron-donating layer, and the solvent is volatilized to form an electron-accepting layer. In this way, an active layer having a two-layer structure can be formed. The order of forming the electron donating layer and the electron accepting layer may be reversed.
- the thickness of the active layer is usually 1 nm to 100 ⁇ m, preferably 2 nm to 1000 nm, more preferably 5 nm to 500 nm, and even more preferably 20 nm to 200 nm.
- various thin film forming methods can be appropriately selected in consideration of conditions such as the type and thickness of the electrode material.
- various thin film forming methods can be appropriately selected in consideration of conditions such as the type and thickness of the material of the intermediate layer.
- the above-described coating methods can be employed as appropriate, and vacuum deposition, sputtering, chemical vapor deposition (CVD), etc. can be employed. May be.
- CVD chemical vapor deposition
- An active layer may be formed.
- the material for the intermediate layer examples include alkali metals such as lithium fluoride (LiF), halides and oxides of alkaline earth metals.
- alkali metals such as lithium fluoride (LiF)
- halides and oxides of alkaline earth metals.
- fine particles of inorganic semiconductor such as titanium oxide, PEDOT (poly (3,4) ethylenedioxythiophene) and the like are also exemplified.
- the anode side intermediate layer is preferably PEDOT
- the cathode side intermediate layer is preferably alkali metal (more preferably LiF).
- the organic photoelectric conversion element manufactured by the manufacturing method of the present invention operates as an organic thin film solar cell because photovoltaic power is generated between the electrodes by irradiating light such as sunlight from a transparent or translucent electrode. You may let them. Moreover, you may use as an organic thin film solar cell module by integrating a plurality of organic thin film solar cells.
- the organic light sensor may be operated. And you may use as an organic image sensor by integrating a plurality of organic photosensors.
- Organic thin-film solar cells can have basically the same module structure as conventional solar cell modules.
- a solar cell module generally has a structure in which cells are formed on a support substrate such as metal or ceramic, and the cell is covered with a filling resin, protective glass, or the like, and light is taken in from the opposite side of the support substrate.
- a transparent support substrate made of a transparent material such as tempered glass can be used as the support substrate, and a cell can be formed on the support substrate to receive light from the transparent support substrate side.
- a module structure called a super straight type, a substrate type, and a potting type, a substrate integrated module structure used in an amorphous silicon solar cell, and the like are known.
- the module structure of the organic thin film solar cell of the present invention can also be appropriately selected from these module structures depending on the purpose of use, the place of use or the environment.
- a typical module structure called super straight type or substrate type has cells arranged at regular intervals between support substrates that are transparent on one or both sides and treated with antireflection, and adjacent cells are metal leads or flexible wiring.
- the current collector electrode is arranged at the outer edge portion and the generated power is taken out to the outside.
- plastic materials such as ethylene vinyl acetate (EVA) may be used between the substrate and the cell in the form of a film or a filling resin depending on the purpose in order to protect the cell or improve the current collection efficiency.
- EVA ethylene vinyl acetate
- the protective function can be achieved by configuring the surface protective layer with a transparent plastic film or by curing the filled resin.
- the periphery of the support substrate is usually fixed in a sandwich shape with a metal frame.
- the support substrate and the frame are usually hermetically sealed with a sealing material.
- a flexible material is used as the material of the cell itself, the material of the support substrate, the filling material, and the sealing material, the solar cell can be formed on a curved surface.
- a solar cell using a flexible support such as a polymer film
- cells are sequentially formed while feeding out a roll-shaped support, cut to a desired size, and then the periphery is sealed with a flexible and moisture-proof material.
- the battery body can be produced.
- a solar cell using a flexible support can also have a module structure called “SCAF” described in Solar Energy Materials and Solar Cells, 48, p383-391.
- SCAF solar Energy Materials and Solar Cells, 48, p383-391.
- a solar cell using a flexible support can be used by being bonded and fixed to a curved glass or the like.
- cracks may occur on the coating film. Further, insoluble components and / or dust may become nuclei and aggregated particles may be generated.
- the occurrence of cracks and the occurrence of agglomerated flow leads to phenomena such as poor electrical or chemical contact at the bonding interface and the occurrence of leakage current. According to the present invention, the occurrence of these reductions can be reduced, so that the photoelectric conversion efficiency is improved.
- Example 1 Preparation of an organic photoelectric conversion element
- a glass substrate on which ITO having a thickness of about 150 nm formed by sputtering was patterned was washed with an organic solvent, an alkaline detergent, and ultrapure water and dried.
- This substrate was UV-O 3 treated with a UV-O 3 apparatus with the ITO surface facing up.
- a suspension of an aqueous solution of poly (3,4) ethylenedioxythiophene / polystyrene sulfonic acid dissolved in water was filtered through a 0.5 micron filter.
- the suspension after filtration was formed into a film with a thickness of 70 nm by spin coating on the ITO surface side of the substrate, and dried at 200 ° C. for 10 minutes on a hot plate in the air.
- an orthodichlorobenzene solution having a weight ratio of 1: 3 of the polymer compound A and [6,6] -phenyl C61 butyric acid methyl ester ([6,6] -PCBM) was prepared.
- the amount of polymer compound A added was 1% by weight with respect to orthodichlorobenzene.
- the polymer compound A had a polystyrene equivalent weight average molecular weight of 17,000 and a polystyrene equivalent number average molecular weight of 5,000.
- the light absorption edge wavelength of the polymer compound A was 925 nm.
- LiF was deposited to a thickness of about 2.3 nm and then Al to a thickness of about 70 nm in a resistance heating vapor deposition apparatus to form an electrode.
- CaO fine particles having an average particle diameter of 1 ⁇ m or less (1 ⁇ m to 800 nm) and an epoxy resin (trade name: UV RESIN XNR 5516Z, manufacturer name: Nagase Chemtech Co., Ltd.), which is an ultraviolet curable resin, are used.
- a sealing material kneaded so as to be 10% by weight it was applied on the electrode so as to have a thickness of 100 ⁇ m, and further, the base material was laminated to perform sealing.
- Example 2 an organic photoelectric conversion element was manufactured in the same manner except that P3HT was used instead of the polymer compound A as the electron donating compound (p-type semiconductor material) and the ratio to C60PCBM was set to 1: 0.8. Produced.
- Comparative Example 1 An organic thin film solar cell was produced in the same manner as in Example 1 except that the sealing material did not contain CaO fine particles.
- Example 2 an organic thin film solar cell was produced in the same manner except that the sealing material did not contain CaO fine particles.
- the shape of the organic thin film solar cell which is the organic photoelectric conversion element obtained in the examples and comparative examples, was a regular square of 2 mm ⁇ 2 mm. It left still in the dark place for 7 days, and measured the solar cell characteristic of the organic thin film solar cell. The measurement was performed as follows. By using a spectral sensitivity measuring device CEP-2000 manufactured by Spectrometer Co., Ltd., the DC voltage applied to the element is swept at a constant speed of 20 mV / second, thereby enabling short-circuit current density, open-circuit voltage, and fill factor. And photoelectric conversion efficiency were measured.
- Table 1 shows the short-circuit current density, the open-circuit voltage, the fill factor, the photoelectric conversion efficiency, the series resistance, and the parallel resistance of each organic thin-film solar cell in Examples and Comparative Examples.
- FIG. 6 shows the current-voltage characteristics of Example 1 and Comparative Example 1
- FIG. 7 shows the current-voltage characteristics of Example 2 and Comparative Example 2, respectively.
- the organic thin film solar cells of Examples 1 and 2 all showed high photoelectric conversion efficiency for a long period of time and had a long life compared to the organic thin film solar cells of Comparative Examples 1 and 2.
- the present invention is useful because it provides an organic photoelectric conversion element.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
〔1〕一対の電極と、前記一対の電極の間に位置し有機化合物を含む活性層と、を有する動作部分、及び、前記動作部分の少なくとも一部を被覆する封止層、を備える有機光電変換素子であって、前記封止層は、酸素吸収性及び/又は水吸収性の物質を含有する、有機光電変換素子。
〔2〕酸素吸収性及び/又は水吸収性の物質が、金属酸化物である上記〔1〕に記載の有機光電変換素子。
〔3〕金属酸化物が、酸化カルシウムである上記〔2〕に記載の有機光電変換素子。
〔4〕酸素吸収性及び/又は水吸収性の物質は、粒子径が1μm以下の粒子である上記〔1〕から〔3〕のいずれか一項に記載の有機光電変換素子。
〔5〕封止層上に基板が載置される、上記〔1〕から〔4〕のいずれか一項に記載の有機光電変換素子。
〔6〕一対の電極と、前記一対の電極の間に位置し有機化合物を含む活性層と、を有する動作部分の少なくとも一部を、酸素吸収性及び/又は水吸収性の物質を含有する封止層で被覆すること、を含む有機光電変換素子の製造方法。
20 基板
32 第1電極
34 第2電極
40 活性層
42 第1活性層
44 第2活性層
52 第1中間層
54 第2中間層
50 封止層
60 基板
70 動作部分
スパッタリング法にて成膜された約150nmの膜厚のITOがパターニングされたガラス基板を有機溶媒、アルカリ洗剤、超純水で洗浄し、乾かした。この基板に、ITO面を上にしてUV-O3装置にてUV-O3処理を行った。
実施例1において、電子供与性化合物(p型半導体材料)として高分子化合物Aの代わりにP3HTを用い、C60PCBMとの比率を1:0.8とした以外は同様に行い、有機光電変換素子を作製した。
実施例1において、封止材にCaO微粒子を含ませなかったこと以外は同様にして有機薄膜太陽電池を作製した。
実施例2において、封止材にCaO微粒子を含ませなかったこと以外は同様にして有機薄膜太陽電池を作製した。
実施例及び比較例において得られた有機光電変換素子である有機薄膜太陽電池の形状は、2mm×2mmの正四角形であった。暗所にて7日間静置し、有機薄膜太陽電池の太陽電池特性を測定した。測定は以下のようにして行った。分光計器株式会社製の分光感度測定装置CEP-2000型を用いて、素子に対するDC電圧印加を20mV/秒の定速で掃引することにより、短絡電流密度、開放端電圧、曲線因子(フィルファクター)、及び光電変換効率を測定した。実施例及び比較例の各有機薄膜太陽電池の短絡電流密度、開放端電圧、曲線因子、光電変換効率、直列抵抗及び並列抵抗を、表1に示す。また、図6に、実施例1と比較例1の電流-電圧特性を、図7に、実施例2と比較例2の電流-電圧特性を、それぞれ示す。
Claims (6)
- 一対の電極と、前記一対の電極の間に位置し有機化合物を含む活性層と、を有する動作部分、及び、前記動作部分の少なくとも一部を被覆する封止層、を備える有機光電変換素子であって、
前記封止層は、酸素吸収性及び/又は水吸収性の物質を含有する、有機光電変換素子。 - 酸素吸収性及び/又は水吸収性の物質が、金属酸化物である請求項1に記載の有機光電変換素子。
- 金属酸化物が、酸化カルシウムである請求項2に記載の有機光電変換素子。
- 酸素吸収性及び/又は水吸収性の物質は、粒子径が1μm以下の粒子である請求項1に記載の有機光電変換素子。
- 封止層上に基板が載置される、請求項1に記載の有機光電変換素子。
- 一対の電極と、前記一対の電極の間に位置し有機化合物を含む活性層と、を有する動作部分の少なくとも一部を、酸素吸収性及び/又は水吸収性の物質を含有する封止層で被覆すること、を含む有機光電変換素子の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010800478418A CN102576810A (zh) | 2009-10-30 | 2010-10-26 | 有机光电转换元件及其制造方法 |
US13/504,802 US20120216869A1 (en) | 2009-10-30 | 2010-10-26 | Organic photovoltaic cell and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009250224 | 2009-10-30 | ||
JP2009-250224 | 2009-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011052580A1 true WO2011052580A1 (ja) | 2011-05-05 |
Family
ID=43922004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/068955 WO2011052580A1 (ja) | 2009-10-30 | 2010-10-26 | 有機光電変換素子及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120216869A1 (ja) |
JP (1) | JP2011119705A (ja) |
CN (1) | CN102576810A (ja) |
WO (1) | WO2011052580A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013045679A1 (de) * | 2011-09-30 | 2013-04-04 | Saint-Gobain Glass France | Laminierter verbund mit trocknungsmittel, sowie verfahren zu dessen herstellung |
US20150144200A1 (en) * | 2012-06-04 | 2015-05-28 | Sumitomo Chemical Company, Limited | Composition and electronic device using the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014136359A1 (ja) | 2013-03-07 | 2014-09-12 | ローム株式会社 | 有機薄膜太陽電池およびその製造方法、および電子機器 |
JP2022166501A (ja) * | 2021-04-21 | 2022-11-02 | 住友化学株式会社 | インク組成物及びその製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198832A (ja) * | 1991-09-30 | 1993-08-06 | Canon Inc | 太陽電池 |
JP2000243989A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 透明フィルム型太陽電池モジュール |
JP2002237335A (ja) * | 2001-02-08 | 2002-08-23 | Hitachi Maxell Ltd | 光電変換素子 |
JP2004165512A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Works Ltd | 有機光電変換素子 |
WO2009043776A1 (en) * | 2007-10-04 | 2009-04-09 | Saes Getters S.P.A. | Composite getter for manufacturing photovoltaic panels |
JP2010021501A (ja) * | 2008-07-14 | 2010-01-28 | Mitsubishi Chemicals Corp | ブラインド用太陽電池パネル及びブラインド |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE477597T1 (de) * | 2004-07-02 | 2010-08-15 | Konarka Technologies Inc | Organische photovoltaische vorrichtung mit verkapselung |
JP2006344423A (ja) * | 2005-06-07 | 2006-12-21 | Showa Denko Kk | 有機el発光装置とその製造方法 |
JP5594930B2 (ja) * | 2007-10-17 | 2014-09-24 | 小松精練株式会社 | 有機薄膜太陽電池用ホットメルト型部材及び有機薄膜太陽電池素子筐体封止パネル |
-
2010
- 2010-10-26 WO PCT/JP2010/068955 patent/WO2011052580A1/ja active Application Filing
- 2010-10-26 US US13/504,802 patent/US20120216869A1/en not_active Abandoned
- 2010-10-26 CN CN2010800478418A patent/CN102576810A/zh active Pending
- 2010-10-29 JP JP2010243122A patent/JP2011119705A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198832A (ja) * | 1991-09-30 | 1993-08-06 | Canon Inc | 太陽電池 |
JP2000243989A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 透明フィルム型太陽電池モジュール |
JP2002237335A (ja) * | 2001-02-08 | 2002-08-23 | Hitachi Maxell Ltd | 光電変換素子 |
JP2004165512A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Works Ltd | 有機光電変換素子 |
WO2009043776A1 (en) * | 2007-10-04 | 2009-04-09 | Saes Getters S.P.A. | Composite getter for manufacturing photovoltaic panels |
JP2010021501A (ja) * | 2008-07-14 | 2010-01-28 | Mitsubishi Chemicals Corp | ブラインド用太陽電池パネル及びブラインド |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013045679A1 (de) * | 2011-09-30 | 2013-04-04 | Saint-Gobain Glass France | Laminierter verbund mit trocknungsmittel, sowie verfahren zu dessen herstellung |
US20150144200A1 (en) * | 2012-06-04 | 2015-05-28 | Sumitomo Chemical Company, Limited | Composition and electronic device using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2011119705A (ja) | 2011-06-16 |
US20120216869A1 (en) | 2012-08-30 |
CN102576810A (zh) | 2012-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5553727B2 (ja) | 有機光電変換素子及びその製造方法 | |
US20120216866A1 (en) | Organic photovoltaic cell | |
JP5608041B2 (ja) | 有機光電変換素子及び有機光電変換モジュール | |
WO2011052573A1 (ja) | 有機光電変換素子 | |
WO2011052571A1 (ja) | 有機光電変換素子 | |
WO2011052565A1 (ja) | 有機光電変換素子 | |
WO2011052582A1 (ja) | 有機薄膜太陽電池モジュールの製造方法 | |
WO2011052510A1 (ja) | 有機薄膜太陽電池及びその製造方法 | |
US20120211741A1 (en) | Organic photovoltaic cell | |
WO2011052580A1 (ja) | 有機光電変換素子及びその製造方法 | |
EP2325912A1 (en) | Organic photoelectric conversion element and fabrication method therefor | |
WO2011052583A1 (ja) | 有機光電変換素子 | |
JP5553728B2 (ja) | 有機光電変換素子 | |
JP5715796B2 (ja) | 有機光電変換素子の製造方法 | |
WO2011052579A1 (ja) | 有機光電変換素子及びその製造方法 | |
JP5608040B2 (ja) | 有機光電変換素子 | |
JP2011119679A (ja) | 有機光電変換素子及びその製造方法 | |
WO2012121274A1 (ja) | 光電変換素子の製造方法 | |
WO2011052578A1 (ja) | 有機光電変換素子の製造方法 | |
JP2010251235A (ja) | 電子素子 | |
WO2014136696A1 (ja) | 光電変換素子及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080047841.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10826712 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13504802 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10826712 Country of ref document: EP Kind code of ref document: A1 |