JP5766289B2 - タングステン研磨用cmpスラリー組成物 - Google Patents
タングステン研磨用cmpスラリー組成物 Download PDFInfo
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- JP5766289B2 JP5766289B2 JP2013529087A JP2013529087A JP5766289B2 JP 5766289 B2 JP5766289 B2 JP 5766289B2 JP 2013529087 A JP2013529087 A JP 2013529087A JP 2013529087 A JP2013529087 A JP 2013529087A JP 5766289 B2 JP5766289 B2 JP 5766289B2
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- JP
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- tungsten
- polishing
- slurry composition
- cmp
- polishing rate
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Description
また、本発明の別の一実施例によると、組成物のpHは2〜4であることが好ましい。pH2以下の場合、強酸で取り扱いが難しく危険であり、pH4以上の場合、タングステン酸化物の形成による研磨ではない腐食(corrosion)による研磨により、表面にピット(corrosion pit)が生じる。
下記表1によってCMP工程で一般的に用いるH2O2を2重量%のみ添加したスラリーの場合を比較例1とし、図2に比較例1のスラリー組成物のW、TiN、Oxideに対する研磨率を示した。
金属CMP工程で用いる過硫酸アンモニウム(APS:ammonium persulfate)2重量%のみ添加した場合を下記表2のような組成を比較例2として、W、TiN、Oxideに対する研磨率を測定し、その結果を図3に示した。
下記表3によってスラリー組成物にFe(NO3)3を2重量%添加した場合を比較例3として、W、TiN、Oxideに対する研磨率を測定した結果、図4で見るとおりタングステンの研磨率が1600Å/min程度と高く現れた。しかし、スラリーの変色によるパッド汚れ、寿命及び金属汚染などの問題が発生した。
下記表4でのように、H2O2は除き、Fe(NO3)30.01重量%とAPSの濃度とを変化させた場合を比較例4として、W、TiN、Oxideに対する研磨率を測定した結果、図6の結果のように、タングステンの研磨率は非常に低く現れた。
下記表5でのように、H2O21重量%にFe(NO3)3の濃度を変化させた場合を比較例5として、W、TiN、Oxideに対する研磨率を測定し、その結果を図7に示した。
上記実験の結果、タングステンCMPの間、TiN-Wのエッチング選択比は1.5から2以上が必要であり、W-Oxideのエッチング選択比の場合は2以上の選択比が必須的に必要であるということが分かった。
コロイドシリカのスラリーにH2O21重量%、APSを添加していないものと、0.05重量%を添加したスラリーにFe(NO3)3の濃度によって研磨した評価の結果、TiNは約600Å/min程度研磨率が減少した反面、WとOxideの研磨率は変化がほとんどなかった。結果的に、APS0.05重量%とFe(NO3)30.1重量%でTiN-WそしてW-Oxideのエッチング選択比は1.8:1と2.1:1とをそれぞれ達成した。(図9)
Claims (3)
- 研磨剤と研磨促進剤とを含み、変色を引き起こすことなく、窒化チタニウムの研磨率を抑制させると共にタングステンの研磨率を増大させてエッチング選択比が調節されるタングステン研磨用CMPスラリー組成物であって、
前記研磨剤は超純水に分散されたコロイドシリカを含み、
前記研磨促進剤は過酸化水素水0.5重量%〜2重量%、過硫酸アンモニウム0.05重量%〜1重量%、及び硝酸鉄0.01重量%〜0.1重量%を含み、
タングステンと窒化チタニウムとのエッチング選択比が、1:1.5〜2になるようにし、且つ、タングステンと酸化膜とのエッチング選択比が、2:1以上になるようにし、
前記過硫酸アンモニウムの濃度が増大するにつれて前記窒化チタニウムの研磨率が減少し、前記タングステンの研磨率は増大し、
前記研磨促進剤は上記範囲のうち前記過硫酸アンモニウムを0.05重量%の濃度で含み、且つ前記硝酸鉄を0.1重量%の濃度で含み、
前記タングステンと窒化チタニウムとのエッチング選択比が1:1.8であり、前記タングステンと酸化膜とのエッチング選択比が2.1:1であることを特徴とするタングステン研磨用CMPスラリー組成物。 - 前記コロイドシリカの含量は、2重量%〜4重量%であることを特徴とする請求項1に記載のタングステン研磨用CMPスラリー組成物。
- 前記組成物のpHは、2〜4であることを特徴とする請求項1に記載のタングステン研磨用CMPスラリー組成物。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0081207 | 2011-08-16 | ||
KR20110081207 | 2011-08-16 | ||
KR1020110117872A KR101335946B1 (ko) | 2011-08-16 | 2011-11-11 | 텅스텐 연마용 cmp 슬러리 조성물 |
KR10-2011-0117872 | 2011-11-11 | ||
PCT/KR2012/005397 WO2013024971A2 (ko) | 2011-08-16 | 2012-07-06 | 텅스텐 연마용 cmp 슬러리 조성물 |
Publications (2)
Publication Number | Publication Date |
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JP2014504441A JP2014504441A (ja) | 2014-02-20 |
JP5766289B2 true JP5766289B2 (ja) | 2015-08-19 |
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JP2013529087A Active JP5766289B2 (ja) | 2011-08-16 | 2012-07-06 | タングステン研磨用cmpスラリー組成物 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9163314B2 (ja) |
JP (1) | JP5766289B2 (ja) |
KR (1) | KR101335946B1 (ja) |
CN (1) | CN103228756B (ja) |
TW (1) | TWI456035B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9303190B2 (en) * | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
KR101834418B1 (ko) * | 2015-10-02 | 2018-03-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
US10066126B2 (en) | 2016-01-06 | 2018-09-04 | Cabot Microelectronics Corporation | Tungsten processing slurry with catalyst |
JP6928675B2 (ja) * | 2017-05-25 | 2021-09-01 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティドSaint−Gobain Ceramics And Plastics, Inc. | セラミック材料の化学機械研磨のための酸化流体 |
KR102422952B1 (ko) * | 2017-06-12 | 2022-07-19 | 삼성전자주식회사 | 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
CN109628934B (zh) * | 2018-08-30 | 2021-04-16 | 上海昕沐化学科技有限公司 | 环保型褪锡液及其制备方法 |
US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
KR102266618B1 (ko) * | 2020-08-04 | 2021-06-18 | 영창케미칼 주식회사 | 텅스텐막에 대한 질화티타늄막의 식각 선택비를 조절하기 위한 식각액 조성물 및 이를 이용한 식각방법 |
KR20230026183A (ko) * | 2021-08-17 | 2023-02-24 | 주식회사 케이씨텍 | 금속 연마용 슬러리 조성물 |
WO2023085007A1 (ja) * | 2021-11-12 | 2023-05-19 | Jsr株式会社 | 化学機械研磨用組成物および研磨方法 |
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JPH06313164A (ja) * | 1993-04-28 | 1994-11-08 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
WO2001091975A1 (fr) | 2000-05-31 | 2001-12-06 | Jsr Corporation | Materiau abrasif |
US20030139047A1 (en) | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
JP3984902B2 (ja) * | 2002-10-31 | 2007-10-03 | Jsr株式会社 | ポリシリコン膜又はアモルファスシリコン膜研磨用化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
KR100605943B1 (ko) * | 2003-12-31 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 반도체 소자의 텅스텐 플러그 형성 방법 |
US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
KR101032504B1 (ko) * | 2006-06-30 | 2011-05-04 | 주식회사 엘지화학 | Cmp 슬러리 |
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
KR100948814B1 (ko) | 2006-09-27 | 2010-03-24 | 테크노세미켐 주식회사 | 텅스텐 배선 형성용 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
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JP2009206148A (ja) * | 2008-02-26 | 2009-09-10 | Fujimi Inc | 研磨用組成物 |
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- 2012-07-06 JP JP2013529087A patent/JP5766289B2/ja active Active
- 2012-07-06 CN CN201280001134.4A patent/CN103228756B/zh active Active
- 2012-08-16 TW TW101129689A patent/TWI456035B/zh active
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KR20130019332A (ko) | 2013-02-26 |
CN103228756A (zh) | 2013-07-31 |
US9163314B2 (en) | 2015-10-20 |
TW201309787A (zh) | 2013-03-01 |
TWI456035B (zh) | 2014-10-11 |
US20130214199A1 (en) | 2013-08-22 |
JP2014504441A (ja) | 2014-02-20 |
CN103228756B (zh) | 2016-03-16 |
KR101335946B1 (ko) | 2013-12-04 |
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