JP5759967B2 - 液浸リソグラフィー用投影対物レンズ - Google Patents
液浸リソグラフィー用投影対物レンズ Download PDFInfo
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- JP5759967B2 JP5759967B2 JP2012274216A JP2012274216A JP5759967B2 JP 5759967 B2 JP5759967 B2 JP 5759967B2 JP 2012274216 A JP2012274216 A JP 2012274216A JP 2012274216 A JP2012274216 A JP 2012274216A JP 5759967 B2 JP5759967 B2 JP 5759967B2
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- fluoride
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- 238000000671 immersion lithography Methods 0.000 title description 15
- 239000010410 layer Substances 0.000 claims description 212
- 238000007654 immersion Methods 0.000 claims description 173
- 239000000463 material Substances 0.000 claims description 133
- 230000003287 optical effect Effects 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 108
- 239000011241 protective layer Substances 0.000 claims description 91
- 239000007788 liquid Substances 0.000 claims description 58
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 39
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 38
- 229910001868 water Inorganic materials 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 3
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 38
- 230000004888 barrier function Effects 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 30
- 239000002356 single layer Substances 0.000 description 30
- 230000001681 protective effect Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 13
- 238000011161 development Methods 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 12
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
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- 230000007547 defect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 10
- 229910021642 ultra pure water Inorganic materials 0.000 description 10
- 239000012498 ultrapure water Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 9
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- 230000003667 anti-reflective effect Effects 0.000 description 7
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- 238000006731 degradation reaction Methods 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- -1 rare earth fluorides Chemical class 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000011775 sodium fluoride Substances 0.000 description 5
- 235000013024 sodium fluoride Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- 230000007774 longterm Effects 0.000 description 4
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- 238000002310 reflectometry Methods 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 4
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 3
- 229910001632 barium fluoride Inorganic materials 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000001393 microlithography Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000010702 perfluoropolyether Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 3
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 229910004379 HoF 3 Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- OKOSPWNNXVDXKZ-UHFFFAOYSA-N but-3-enoyl chloride Chemical compound ClC(=O)CC=C OKOSPWNNXVDXKZ-UHFFFAOYSA-N 0.000 description 2
- 229910001610 cryolite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- OJIKOZJGHCVMDC-UHFFFAOYSA-K samarium(iii) fluoride Chemical compound F[Sm](F)F OJIKOZJGHCVMDC-UHFFFAOYSA-K 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- NLPMQGKZYAYAFE-UHFFFAOYSA-K titanium(iii) fluoride Chemical compound F[Ti](F)F NLPMQGKZYAYAFE-UHFFFAOYSA-K 0.000 description 2
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 2
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 description 2
- 229940105963 yttrium fluoride Drugs 0.000 description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910005690 GdF 3 Inorganic materials 0.000 description 1
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- HPPLGHKTZRXLTB-UHFFFAOYSA-K [F-].[F-].[F-].[Ac+3] Chemical compound [F-].[F-].[F-].[Ac+3] HPPLGHKTZRXLTB-UHFFFAOYSA-K 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BRCWHGIUHLWZBK-UHFFFAOYSA-K bismuth;trifluoride Chemical compound F[Bi](F)F BRCWHGIUHLWZBK-UHFFFAOYSA-K 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- QGKQZUBNOZRZAH-UHFFFAOYSA-K magnesium;potassium;trifluoride Chemical compound [F-].[F-].[F-].[Mg+2].[K+] QGKQZUBNOZRZAH-UHFFFAOYSA-K 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 description 1
- PPPLOTGLKDTASM-UHFFFAOYSA-A pentasodium;pentafluoroaluminum(2-);tetrafluoroalumanuide Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[F-].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3] PPPLOTGLKDTASM-UHFFFAOYSA-A 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000008823 permeabilization Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQHVZNOWXQGXIX-UHFFFAOYSA-J sodium;yttrium(3+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Na+].[Y+3] HQHVZNOWXQGXIX-UHFFFAOYSA-J 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MZQZQKZKTGRQCG-UHFFFAOYSA-J thorium tetrafluoride Chemical compound F[Th](F)(F)F MZQZQKZKTGRQCG-UHFFFAOYSA-J 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- HPNURIVGONRLQI-UHFFFAOYSA-K trifluoroeuropium Chemical compound F[Eu](F)F HPNURIVGONRLQI-UHFFFAOYSA-K 0.000 description 1
- AATUHDXSJTXIHB-UHFFFAOYSA-K trifluorothulium Chemical compound F[Tm](F)F AATUHDXSJTXIHB-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
3 照明系
5 投影対物レンズ
6 マスク
10 ウェーハ、425、725
12 像面
13 光軸
15 受容装置
16 周辺縁部
20、220、420、520、720 浸液媒体
25、522、501 平凸レンズ
30、60、80、100、310、630 保護層システム
50、90、200、300、400、500、600、700 光学素子
54、321 ホルダ
55 透明基板
70、310 平行平面板
102、122 交互層システム
202、301、601、701 フッ化カルシウム基板
518 交換可能板
602 平面状基板面
730 保護板
750 ホルダ要素
760、770 温度調整装置
Claims (7)
- 自身の物体平面内に配置されるパターンを自身の像面に、自身の光学素子と前記像面との間において配置される浸液媒体を利用して結像させる投影対物レンズであって、
前記光学素子は、フッ化カルシウムによって構成された透明基板、及び該透明基板に取り付けられ、前記浸液媒体との接触用に設けられるとともに、前記浸液媒体によって引き起こされる劣化に対する前記光学素子の耐性を高める役割を果たす保護層システムを備え、
前記保護層システムは、層範囲に対して垂直に連続的または断続的な屈折率プロファイルを有する屈折率分布型層として設計され、前記透明基板付近の領域における屈折率は、本質的に前記透明基板の材料の屈折率に対応し、前記浸液媒体との接触用に設けられる領域における屈折率は、本質的に前記浸液媒体の屈折率に対応する投影対物レンズ。 - 前記保護層システムを備える前記光学素子の温度調整のための温度調整装置を備える請求項1に記載の投影対物レンズ。
- 前記温度調整装置は、前記保護層システムを備える前記光学素子を投影対物レンズの周囲温度より低い温度に冷却する冷却装置として形成される請求項2に記載の投影対物レンズ。
- 前記保護層システムは、前記浸液媒体との接触用に設けられるとともに、屈折率が前記浸液媒体の屈折率n I に近接する板材料によって製作される塊状材料板からなる、請求項1〜3の何れか一項に記載の投影対物レンズ。
- 前記浸液媒体に対する屈折率差Δnは0.01未満である、請求項4に記載の投影対物レンズ。
- 前記浸液媒体は、本質的に水によって構成され、かつ前記板材料は、フッ化リチウム(LiF)であるか、または前記浸液材料は、液状フッ化物であり、前記板材料は、フッ化ナトリウム(NaF)またはフッ化カルシウム(CaF 2 )またはフッ化リチウム(LiF)である請求項5に記載の投影対物レンズ。
- 前記塊状材料板は、交換可能(交換可能な板)である請求項5または6に記載の投影対物レンズ。
Applications Claiming Priority (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
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JP2004358056A Pending JP2005202375A (ja) | 2003-12-15 | 2004-12-10 | 液浸リソグラフィー用投影対物レンズ |
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JP2004358056A Pending JP2005202375A (ja) | 2003-12-15 | 2004-12-10 | 液浸リソグラフィー用投影対物レンズ |
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KR101171809B1 (ko) | 2003-08-26 | 2012-08-13 | 가부시키가이샤 니콘 | 광학소자 및 노광장치 |
EP2261740B1 (en) * | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
DE602005019689D1 (de) * | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
JP5167572B2 (ja) * | 2004-02-04 | 2013-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
JP4370992B2 (ja) * | 2004-02-18 | 2009-11-25 | 株式会社ニコン | 光学素子及び露光装置 |
CN100594430C (zh) * | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
JP2006179759A (ja) * | 2004-12-24 | 2006-07-06 | Nikon Corp | 光学素子及び投影露光装置 |
US7405805B2 (en) * | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007027438A (ja) * | 2005-07-15 | 2007-02-01 | Nikon Corp | 投影光学系、露光装置、およびデバイスの製造方法 |
US7495743B2 (en) | 2005-09-30 | 2009-02-24 | International Business Machines Corporation | Immersion optical lithography system having protective optical coating |
JP4514225B2 (ja) | 2005-11-16 | 2010-07-28 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
WO2007065769A1 (de) | 2005-12-09 | 2007-06-14 | Carl Zeiss Smt Ag | Verfahren zur bearbeitung eines optischen elementes sowie optisches element |
JP5017878B2 (ja) * | 2006-02-13 | 2012-09-05 | 株式会社ニコン | 光学素子及び投影露光装置 |
DE102006011098A1 (de) * | 2006-03-08 | 2007-09-27 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
KR101374956B1 (ko) * | 2006-05-05 | 2014-03-14 | 코닝 인코포레이티드 | 준-텔레센트릭 이미징 렌즈의 왜곡 조정 |
CN101467090A (zh) * | 2006-06-16 | 2009-06-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
JP5156740B2 (ja) * | 2006-07-03 | 2013-03-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | リソグラフィ投影対物器械を修正/修理する方法 |
EP2062098B1 (en) * | 2006-09-12 | 2014-11-19 | Carl Zeiss SMT GmbH | Optical arrangement for immersion lithography |
EP2097789B1 (en) | 2006-12-01 | 2012-08-01 | Carl Zeiss SMT GmbH | Optical system with an exchangeable, manipulable correction arrangement for reducing image aberrations |
EP2215502B1 (en) * | 2007-11-30 | 2017-10-25 | Corning Incorporated | Dense homogeneous fluoride films for duv elements and method of preparing same |
NL1036186A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
DE102010007728A1 (de) | 2010-02-12 | 2011-09-29 | Leica Microsystems Cms Gmbh | Vorrichtung und Verfahren zum Scannen eines Objekts und Mikroskop |
CN101950065B (zh) * | 2010-09-10 | 2011-12-14 | 北京理工大学 | 深紫外全球面光刻物镜 |
DE102011051949B4 (de) | 2011-07-19 | 2017-05-18 | Leica Microsystems Cms Gmbh | Wechselvorrichtung für ein Mikroskop |
DE102011054837A1 (de) | 2011-10-26 | 2013-05-02 | Carl Zeiss Laser Optics Gmbh | Optisches Element |
CN103105666B (zh) * | 2011-11-10 | 2015-04-15 | 上海微电子装备有限公司 | 一种曝光投影物镜 |
CN107728296B (zh) * | 2016-08-10 | 2022-03-04 | 光芒光学股份有限公司 | 光学镜头 |
DE102020208044A1 (de) * | 2020-06-29 | 2021-12-30 | Carl Zeiss Smt Gmbh | Optisches Element für den VUV-Wellenlängenbereich, optische Anordnung und Verfahren zum Herstellen eines optischen Elements |
DE102022207068A1 (de) * | 2022-07-11 | 2024-01-11 | Carl Zeiss Smt Gmbh | Linse für eine zum Betrieb im DUV ausgelegte mikrolithographische Projektionsbelichtungsanlage, sowie Verfahren und Anordnung zum Ausbilden einer Antireflexschicht |
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JPS5881501U (ja) * | 1981-11-27 | 1983-06-02 | 東京光学機械株式会社 | 液浸用先端レンズ |
DE10224361A1 (de) * | 2002-05-03 | 2003-11-13 | Zeiss Carl Smt Ag | Projektionsobjektiv höchster Apertur |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
CN1295566C (zh) * | 2002-05-03 | 2007-01-17 | 卡尔蔡司Smt股份公司 | 极高孔径的投影物镜 |
JP2004358056A (ja) * | 2003-06-06 | 2004-12-24 | Hasegawa Taiiku Shisetsu Corp | グランド埋め込み用部材及びその施工方法 |
JP4880869B2 (ja) * | 2003-08-28 | 2012-02-22 | 株式会社ニコン | レンズ系及び投影露光装置 |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
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- 2004-12-07 DE DE102004059778A patent/DE102004059778A1/de not_active Ceased
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JP2013070087A (ja) | 2013-04-18 |
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EP1544676A2 (de) | 2005-06-22 |
EP1544676A3 (de) | 2006-03-08 |
JP2005202375A (ja) | 2005-07-28 |
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