JP5749325B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP5749325B2 JP5749325B2 JP2013255924A JP2013255924A JP5749325B2 JP 5749325 B2 JP5749325 B2 JP 5749325B2 JP 2013255924 A JP2013255924 A JP 2013255924A JP 2013255924 A JP2013255924 A JP 2013255924A JP 5749325 B2 JP5749325 B2 JP 5749325B2
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2933/0016—Processes relating to electrodes
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Description
31第1リード電極
32第2リード電極
40モールディング部
100半導体発光素子
101基板
110第1導電型半導体層
112凸凹パターン
115電極
120活性層
130第2導電型半導体層
135発光構造物
140チャンネル層
145電流ブロッキング層
150オーミック層
160電極層
170接合層
175伝導性支持部材
180絶縁層
E1半導体領域
Claims (15)
- 接合層と、
前記接合層の上に配置される電極層と、
前記電極層の上に配置されたオーミック層と、
前記オーミック層の上に配置された第1導電型半導体層、前記第1導電型半導体層の上に配置された活性層、前記活性層の上に配置された第2導電型半導体層を含む発光構造物と、
前記発光構造物の下面の周りに沿って前記接合層の上に配置されたチャネル層と、
前記発光構造物の側面上に配置された絶縁層と、
前記発光構造物の上面に配置された電極と、
を含み、
前記オーミック層は、NiまたはAgを含む単一層または多重層であり、
前記オーミック層は、前記チャネル層の側面と接触し、
前記オーミック層は、前記接合層の外壁から内側に所定距離だけ離隔される発光素子。 - 前記電極層は、反射物質を含み、
前記電極層は、前記オーミック層と前記チャネル層の下に配置される請求項1に記載の発光素子。 - 前記電極層の端部は、前記チャネル層に接触しない請求項2に記載の発光素子。
- 前記電極層は、前記発光構造物の外壁に延長形成される請求項1〜3のいずれかに記載の発光素子。
- 前記接合層は、前記チャネル層の下部面に接触する請求項1〜4のいずれかに記載の発光素子。
- 前記電極層は、前記チャネル層の背面の下に配置され、
前記絶縁層は、前記チャネル層の上面上に配置される請求項1〜5のいずれかに記載の発光素子。 - 前記接合層は、前記チャネル層の下部面に接触する請求項1〜6のいずれかに記載の発光素子。
- 前記絶縁層の下端は、前記チャネル層の上に配置され、
前記絶縁層の上端は、前記第1導電型半導体層の周りに形成される請求項1〜7のいずれかに記載の発光素子。 - 前記チャネル層の内側領域は、前記第2導電型半導体層の下面の周りに接触し、その外側は前記発光構造物の終端外側に延長される請求項1〜8のいずれかに記載の発光素子。
- 前記チャネル層は、前記第2導電型半導体層の下面の外側周りに、ループ状、リング状またはフレーム状に形成される請求項1〜9のいずれかに記載の発光素子。
- 前記チャネル層は、ITO(indium tin oxide)、IZO(indium zinc oxide)、IZTO(indium zinc tin oxide)、IAZO(indium aluminum zinc oxide)、IGZO(indium gallium zinc oxide)、IGTO(indium gallium tin oxide)、AZO(aluminum zinc oxide)、ATO(antimony tin oxide)、GZO(gallium zinc oxide)、SiOx、SiOxNy、Al2O3、TiO2中のいずれか1つ以上である請求項1〜10のいずれかに記載の発光素子。
- 前記オーミック層は、前記チャネル層の内側と前記第2導電型半導体層の下に形成される請求項1〜11のいずれかに記載の発光素子。
- 前記オーミック層の端部は、前記チャネル層の下面内側に接触する請求項1〜12のいずれかに記載の発光素子。
- 電流遮断層をさらに含み、
前記電流遮断層は、前記オーミック層内に形成され、前記電極と上下に重なるように形成される請求項1〜13のいずれかに記載の発光素子。 - 前記電極の上面は凹凸を含む請求項1〜14のいずれかに記載の発光素子。
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KR1020090098361A KR101081193B1 (ko) | 2009-10-15 | 2009-10-15 | 반도체 발광소자 및 그 제조방법 |
KR10-2009-0098361 | 2009-10-15 |
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JP2010131987A Division JP5437171B2 (ja) | 2009-10-15 | 2010-06-09 | 半導体発光素子 |
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JP2015098430A Division JP6067056B2 (ja) | 2009-10-15 | 2015-05-13 | 半導体発光素子 |
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JP2014045226A JP2014045226A (ja) | 2014-03-13 |
JP5749325B2 true JP5749325B2 (ja) | 2015-07-15 |
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JP2010131987A Active JP5437171B2 (ja) | 2009-10-15 | 2010-06-09 | 半導体発光素子 |
JP2013255924A Active JP5749325B2 (ja) | 2009-10-15 | 2013-12-11 | 半導体発光素子 |
JP2015098430A Active JP6067056B2 (ja) | 2009-10-15 | 2015-05-13 | 半導体発光素子 |
JP2016246353A Active JP6386015B2 (ja) | 2009-10-15 | 2016-12-20 | 発光素子 |
JP2018149705A Active JP6697039B2 (ja) | 2009-10-15 | 2018-08-08 | 発光素子及び発光素子パッケージ |
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JP2016246353A Active JP6386015B2 (ja) | 2009-10-15 | 2016-12-20 | 発光素子 |
JP2018149705A Active JP6697039B2 (ja) | 2009-10-15 | 2018-08-08 | 発光素子及び発光素子パッケージ |
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US (5) | US8421105B2 (ja) |
EP (1) | EP2312653B1 (ja) |
JP (5) | JP5437171B2 (ja) |
KR (1) | KR101081193B1 (ja) |
CN (1) | CN102044611B (ja) |
TW (1) | TW201114059A (ja) |
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JP2015179858A (ja) | 2015-10-08 |
CN102044611B (zh) | 2015-04-08 |
US20170162753A1 (en) | 2017-06-08 |
US20110089450A1 (en) | 2011-04-21 |
US9935245B2 (en) | 2018-04-03 |
EP2312653A1 (en) | 2011-04-20 |
JP5437171B2 (ja) | 2014-03-12 |
US10636944B2 (en) | 2020-04-28 |
US20130228814A1 (en) | 2013-09-05 |
US20180198030A1 (en) | 2018-07-12 |
US20150325750A1 (en) | 2015-11-12 |
US9608169B2 (en) | 2017-03-28 |
JP2011086907A (ja) | 2011-04-28 |
JP6697039B2 (ja) | 2020-05-20 |
JP2019004161A (ja) | 2019-01-10 |
US9117971B2 (en) | 2015-08-25 |
JP6386015B2 (ja) | 2018-09-05 |
CN102044611A (zh) | 2011-05-04 |
TW201114059A (en) | 2011-04-16 |
KR20110041270A (ko) | 2011-04-21 |
US8421105B2 (en) | 2013-04-16 |
EP2312653B1 (en) | 2019-01-09 |
KR101081193B1 (ko) | 2011-11-07 |
JP6067056B2 (ja) | 2017-01-25 |
JP2014045226A (ja) | 2014-03-13 |
JP2017079335A (ja) | 2017-04-27 |
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