JP5744002B2 - Ｃｍｕｔアレイ - Google Patents

Ｃｍｕｔアレイ Download PDF

Info

Publication number
JP5744002B2
JP5744002B2 JP2012501381A JP2012501381A JP5744002B2 JP 5744002 B2 JP5744002 B2 JP 5744002B2 JP 2012501381 A JP2012501381 A JP 2012501381A JP 2012501381 A JP2012501381 A JP 2012501381A JP 5744002 B2 JP5744002 B2 JP 5744002B2
Authority
JP
Japan
Prior art keywords
layer
wafer
cmut
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012501381A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012521704A5 (https=
JP2012521704A (ja
Inventor
シリッド ベルグ，
シリッド ベルグ，
カマル チャパガイン，
カマル チャパガイン，
ジョン デュー−ハンセン，
ジョン デュー−ハンセン，
キェル アルネ インゲブリグトセン，
キェル アルネ インゲブリグトセン，
ガイール ウリ イェンセン，
ガイール ウリ イェンセン，
キェシュティ ミドトベ，
キェシュティ ミドトベ，
エリック ウトネ ポッペ，
エリック ウトネ ポッペ，
アルネ レネクライヴ，
アルネ レネクライヴ，
ダーグ トシュタイン ワング，
ダーグ トシュタイン ワング，
Original Assignee
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）, ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー） filed Critical ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Publication of JP2012521704A publication Critical patent/JP2012521704A/ja
Publication of JP2012521704A5 publication Critical patent/JP2012521704A5/ja
Application granted granted Critical
Publication of JP5744002B2 publication Critical patent/JP5744002B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
JP2012501381A 2009-03-26 2010-03-26 Ｃｍｕｔアレイ Expired - Fee Related JP5744002B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256.4 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905255.6 2009-03-26
GB0909296.6 2009-05-28
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (3)

Publication Number Publication Date
JP2012521704A JP2012521704A (ja) 2012-09-13
JP2012521704A5 JP2012521704A5 (https=) 2013-05-16
JP5744002B2 true JP5744002B2 (ja) 2015-07-01

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012501381A Expired - Fee Related JP5744002B2 (ja) 2009-03-26 2010-03-26 Ｃｍｕｔアレイ

Country Status (7)

Country Link
US (1) US20120074509A1 (https=)
EP (4) EP2662153A1 (https=)
JP (1) JP5744002B2 (https=)
CN (1) CN102427890A (https=)
DK (1) DK2411163T3 (https=)
ES (1) ES2416182T3 (https=)
WO (1) WO2010109205A2 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2152024A4 (en) * 2007-04-27 2017-01-04 Hitachi, Ltd. Ultrasonic transducer and ultrasonic imaging apparatus
FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
HK1201429A1 (en) 2011-10-17 2015-09-04 Butterfly Network Inc. Transmissive imaging and related apparatus and methods
US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
WO2013089648A1 (en) * 2011-12-16 2013-06-20 Agency For Science, Technology And Research Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
JP2013226389A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子及びその製造方法、及びそれを用いた被検体情報取得装置
CN104379268B (zh) * 2012-05-31 2017-02-22 皇家飞利浦有限公司 晶片及其制造方法
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
EP2946413B1 (en) 2013-01-18 2022-01-05 Yale University Superconducting device with at least one enclosure
WO2014168665A2 (en) * 2013-01-18 2014-10-16 Yale University Methods for making a superconducting device with at least one enclosure
WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
JP6232124B2 (ja) 2013-03-15 2017-11-15 バタフライ ネットワーク，インコーポレイテッド 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法
CA2903479C (en) 2013-03-15 2023-10-10 Butterfly Network, Inc. Monolithic ultrasonic imaging devices, systems and methods
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
TWI682817B (zh) 2013-07-23 2020-01-21 美商蝴蝶網路公司 可互連的超音波換能器探頭以及相關的方法和設備
US10541659B2 (en) 2013-10-15 2020-01-21 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
CN105793674B (zh) * 2013-11-22 2019-05-28 新宁医院 包括具有空间分段表面的背衬的超声换能器
KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
CA2946137C (en) 2014-04-18 2022-08-09 Butterfly Network, Inc. Ultrasonic imaging compression methods and apparatus
KR102237662B1 (ko) 2014-04-18 2021-04-09 버터플라이 네트워크, 인크. 상보적 금속 산화물 반도체(ｃｍｏｓ) 웨이퍼들 내의 초음파 트랜스듀서들 및 관련 장치 및 방법들
CN106461767B (zh) 2014-04-18 2019-05-28 蝴蝶网络有限公司 单衬底超声成像装置的架构、相关设备和方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) * 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
WO2016138408A1 (en) 2015-02-27 2016-09-01 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR102493109B1 (ko) 2015-02-27 2023-01-30 예일 유니버시티 조셉슨 접합-기반 서큘레이터 및 관련 시스템 및 방법
CN107683527A (zh) 2015-04-17 2018-02-09 耶鲁大学 无线约瑟夫逊参数转换器
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
SG11201805577XA (en) 2016-01-15 2018-07-30 Univ Yale Techniques for manipulation of two-qubit quantum states and related systems and methods
CN106998522B (zh) * 2016-01-25 2023-07-28 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器
FR3060844B1 (fr) 2016-12-15 2018-12-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microelectronique acoustique
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (en) 2017-06-21 2024-02-14 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
WO2019099013A1 (en) 2017-11-16 2019-05-23 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducer with a patterned membrane structure
US11737376B2 (en) 2017-12-11 2023-08-22 Yale University Superconducting nonlinear asymmetric inductive element and related systems and methods
CN112075090B (zh) * 2018-05-03 2022-10-14 蝴蝶网络有限公司 用于cmos传感器上的超声换能器的压力端口
US11223355B2 (en) 2018-12-12 2022-01-11 Yale University Inductively-shunted transmon qubit for superconducting circuits
WO2020150348A1 (en) 2019-01-17 2020-07-23 Yale University Josephson nonlinear circuit
EP4176978B1 (en) 2019-03-14 2023-11-22 Imec VZW Flexible ultrasound array
EP3909692A1 (en) * 2020-05-14 2021-11-17 Koninklijke Philips N.V. An ultrasound transducer and a tiled array of ultrasound transducers
FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
US20220409170A1 (en) * 2021-06-23 2022-12-29 Boston Scientific Scimed, Inc. Ultrasound transducer
FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312485A (ja) * 1988-06-13 1989-12-18 Agency Of Ind Science & Technol 静電容量型超音波トランスデューサ
US5267221A (en) * 1992-02-13 1993-11-30 Hewlett-Packard Company Backing for acoustic transducer array
JP3512500B2 (ja) * 1994-12-26 2004-03-29 株式会社東芝 超音波トランスジューサとその製造方法
US5648941A (en) * 1995-09-29 1997-07-15 Hewlett-Packard Company Transducer backing material
US6266857B1 (en) * 1998-02-17 2001-07-31 Microsound Systems, Inc. Method of producing a backing structure for an ultrasound transceiver
US6430109B1 (en) * 1999-09-30 2002-08-06 The Board Of Trustees Of The Leland Stanford Junior University Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections
US6467138B1 (en) * 2000-05-24 2002-10-22 Vermon Integrated connector backings for matrix array transducers, matrix array transducers employing such backings and methods of making the same
JP2005535108A (ja) * 2002-05-23 2005-11-17 ショット アーゲー 高周波用途に適した導体構成を有する構成要素を製造する方法
US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US7321181B2 (en) * 2004-04-07 2008-01-22 The Board Of Trustees Of The Leland Stanford Junior University Capacitive membrane ultrasonic transducers with reduced bulk wave generation and method
US7545075B2 (en) * 2004-06-04 2009-06-09 The Board Of Trustees Of The Leland Stanford Junior University Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same
WO2005120355A1 (ja) * 2004-06-07 2005-12-22 Olympus Corporation 静電容量型超音波トランスデューサ
KR100618287B1 (ko) * 2004-08-24 2006-08-31 삼신이노텍 주식회사 블루투스를 이용한 펜타입의 휴대용 무선통신 단말기
ITRM20050093A1 (it) * 2005-03-04 2006-09-05 Consiglio Nazionale Ricerche Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato.
EP1890825A2 (en) * 2005-06-07 2008-02-27 Koninklijke Philips Electronics N.V. Multicomponent backing block for ultrasound sensor assemblies
US20070180916A1 (en) * 2006-02-09 2007-08-09 General Electric Company Capacitive micromachined ultrasound transducer and methods of making the same
JP4804961B2 (ja) * 2006-03-03 2011-11-02 オリンパスメディカルシステムズ株式会社 超音波振動子及びそれを搭載した体腔内超音波診断装置
US7741686B2 (en) * 2006-07-20 2010-06-22 The Board Of Trustees Of The Leland Stanford Junior University Trench isolated capacitive micromachined ultrasonic transducer arrays with a supporting frame
US7843022B2 (en) * 2007-10-18 2010-11-30 The Board Of Trustees Of The Leland Stanford Junior University High-temperature electrostatic transducers and fabrication method
WO2009154091A1 (ja) * 2008-06-17 2009-12-23 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
EP2659987A1 (en) 2013-11-06
DK2411163T3 (da) 2013-06-10
EP2411163A2 (en) 2012-02-01
EP2669019A1 (en) 2013-12-04
EP2411163B1 (en) 2013-05-15
WO2010109205A2 (en) 2010-09-30
CN102427890A (zh) 2012-04-25
WO2010109205A3 (en) 2011-03-03
ES2416182T3 (es) 2013-07-30
EP2662153A1 (en) 2013-11-13
JP2012521704A (ja) 2012-09-13
US20120074509A1 (en) 2012-03-29

Similar Documents

Publication Publication Date Title
JP5744002B2 (ja) Ｃｍｕｔアレイ
US8324006B1 (en) Method of forming a capacitive micromachined ultrasonic transducer (CMUT)
CN104023860B (zh) 超声换能器设备及制造所述超声换能器设备的方法
US7880565B2 (en) Micro-electro-mechanical transducer having a surface plate
US8008105B2 (en) Methods for fabricating micro-electro-mechanical devices
US8063540B2 (en) High frequency ultrasound transducers based on ceramic films
JP4869257B2 (ja) 超音波変換器アレイ
JP2021509787A (ja) 高周波超音波トランスデューサ
CN118200821A (zh) 具有掩埋腔体的换能器组件及其制造方法
TWI838189B (zh) 一種減少超聲換能器聲串擾的深槽隔離方法及超聲換能器
CN103875068A (zh) 穿晶片通路设备以及其制造方法
TW202213824A (zh) 壓電微機械超聲波換能器及其製作方法
WO2013089648A1 (en) Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
US12486159B2 (en) Micro-machined ultrasound transducers with insulation layer and methods of manufacture
KR20240025678A (ko) 절연 층을 가진 미세-가공된 초음파 트랜듀서들 및 제조 방법들
Zhuang et al. Through-wafer trench-isolated electrical interconnects for CMUT arrays
Simpson et al. Novel interconnection and fabrication method for high-frequency ultrasound arrays
CN114335320A (zh) 压电微机械超声波换能器及其制作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130326

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130326

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140312

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140408

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140707

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140714

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150407

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150428

R150 Certificate of patent or registration of utility model

Ref document number: 5744002

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees