JP5744002B2 - Ｃｍｕｔアレイ - Google Patents

Ｃｍｕｔアレイ Download PDF

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Publication number
JP5744002B2
JP5744002B2 JP2012501381A JP2012501381A JP5744002B2 JP 5744002 B2 JP5744002 B2 JP 5744002B2 JP 2012501381 A JP2012501381 A JP 2012501381A JP 2012501381 A JP2012501381 A JP 2012501381A JP 5744002 B2 JP5744002 B2 JP 5744002B2
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JP
Japan
Prior art keywords
layer
wafer
cmut
silicon
substrate
Prior art date
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Expired - Fee Related
Application number
JP2012501381A
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English (en)
Japanese (ja)
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JP2012521704A5 (https=
JP2012521704A (ja
Inventor
シリッド ベルグ，
シリッド ベルグ，
カマル チャパガイン，
カマル チャパガイン，
ジョン デュー−ハンセン，
ジョン デュー−ハンセン，
キェル アルネ インゲブリグトセン，
キェル アルネ インゲブリグトセン，
ガイール ウリ イェンセン，
ガイール ウリ イェンセン，
キェシュティ ミドトベ，
キェシュティ ミドトベ，
エリック ウトネ ポッペ，
エリック ウトネ ポッペ，
アルネ レネクライヴ，
アルネ レネクライヴ，
ダーグ トシュタイン ワング，
ダーグ トシュタイン ワング，
Original Assignee
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）, ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー） filed Critical ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Publication of JP2012521704A publication Critical patent/JP2012521704A/ja
Publication of JP2012521704A5 publication Critical patent/JP2012521704A5/ja
Application granted granted Critical
Publication of JP5744002B2 publication Critical patent/JP5744002B2/ja
Expired - Fee Related legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012501381A 2009-03-26 2010-03-26 Ｃｍｕｔアレイ Expired - Fee Related JP5744002B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905256.4 2009-03-26
GB0905255.6 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
GB0909296.6 2009-05-28
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (3)

Publication Number Publication Date
JP2012521704A JP2012521704A (ja) 2012-09-13
JP2012521704A5 JP2012521704A5 (https=) 2013-05-16
JP5744002B2 true JP5744002B2 (ja) 2015-07-01

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012501381A Expired - Fee Related JP5744002B2 (ja) 2009-03-26 2010-03-26 Ｃｍｕｔアレイ

Country Status (7)

Country Link
US (1) US20120074509A1 (https=)
EP (4) EP2669019A1 (https=)
JP (1) JP5744002B2 (https=)
CN (1) CN102427890A (https=)
DK (1) DK2411163T3 (https=)
ES (1) ES2416182T3 (https=)
WO (1) WO2010109205A2 (https=)

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US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
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US9533873B2 (en) 2013-02-05 2017-01-03 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
CN109954646B (zh) 2013-03-15 2021-04-27 蝴蝶网络有限公司 超声装置
WO2014151525A2 (en) 2013-03-15 2014-09-25 Butterfly Network, Inc. Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
AU2014293274B2 (en) 2013-07-23 2018-11-01 Butterfly Network, Inc. Interconnectable ultrasound transducer probes and related methods and apparatus
CA2927326C (en) 2013-10-15 2024-02-27 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
CA2930648A1 (en) 2013-11-22 2015-05-28 Sunnybrook Health Sciences Centre Ultrasonic transducer with backing having spatially segmented surface
KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
CA2946133A1 (en) 2014-04-18 2015-10-22 Butterfly Network, Inc. Ultrasonic transducers in complementary metal oxide semiconductor (cmos) wafers and related apparatus and methods
CA2946120C (en) 2014-04-18 2022-10-25 Butterfly Network, Inc. Architecture of single substrate ultrasonic imaging devices, related apparatuses, and methods
EP3132281B1 (en) 2014-04-18 2019-10-30 Butterfly Network Inc. Ultrasonic imaging compression methods and apparatus
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
EP3262762B1 (en) 2015-02-27 2021-11-10 Yale University Josephson junction-based circulators and related systems and methods
US10468740B2 (en) 2015-02-27 2019-11-05 Yale University Techniques for coupling planar qubits to non-planar resonators and related systems and methods
CA2977968C (en) 2015-02-27 2023-10-17 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR20180004132A (ko) 2015-04-17 2018-01-10 예일 유니버시티 무선 조셉슨 파라메트릭 컨버터
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
WO2017123940A1 (en) 2016-01-15 2017-07-20 Yale University Techniques for manipulation of two-quantum states and related systems and methods
CN106998522B (zh) * 2016-01-25 2023-07-28 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器
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Also Published As

Publication number Publication date
DK2411163T3 (da) 2013-06-10
ES2416182T3 (es) 2013-07-30
JP2012521704A (ja) 2012-09-13
US20120074509A1 (en) 2012-03-29
EP2659987A1 (en) 2013-11-06
EP2669019A1 (en) 2013-12-04
CN102427890A (zh) 2012-04-25
EP2411163A2 (en) 2012-02-01
WO2010109205A2 (en) 2010-09-30
EP2662153A1 (en) 2013-11-13
WO2010109205A3 (en) 2011-03-03
EP2411163B1 (en) 2013-05-15

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