CN102427890A - 具有导电过孔的晶片键合的cmut阵列 - Google Patents

具有导电过孔的晶片键合的cmut阵列 Download PDF

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Publication number
CN102427890A
CN102427890A CN2010800225984A CN201080022598A CN102427890A CN 102427890 A CN102427890 A CN 102427890A CN 2010800225984 A CN2010800225984 A CN 2010800225984A CN 201080022598 A CN201080022598 A CN 201080022598A CN 102427890 A CN102427890 A CN 102427890A
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CN
China
Prior art keywords
layer
wafer
cmut
silicon
array
Prior art date
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Pending
Application number
CN2010800225984A
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English (en)
Chinese (zh)
Inventor
西格丽德·伯格
卡马尔·恰帕金
乔恩·杜-汉森
谢尔·阿恩·英厄布里格森
吉尔·尤里·延森
谢尔斯蒂·米德伯
埃里克·尤特讷·波普
阿恩·罗内克莱夫
戴格·索尔斯坦·望
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NTNU Technology Transfer AS
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NTNU Technology Transfer AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by NTNU Technology Transfer AS filed Critical NTNU Technology Transfer AS
Publication of CN102427890A publication Critical patent/CN102427890A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2010800225984A 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列 Pending CN102427890A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905256.4 2009-03-26
GB0905255.6 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
GB0909296.6 2009-05-28
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
CN102427890A true CN102427890A (zh) 2012-04-25

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800225984A Pending CN102427890A (zh) 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列

Country Status (7)

Country Link
US (1) US20120074509A1 (https=)
EP (4) EP2669019A1 (https=)
JP (1) JP5744002B2 (https=)
CN (1) CN102427890A (https=)
DK (1) DK2411163T3 (https=)
ES (1) ES2416182T3 (https=)
WO (1) WO2010109205A2 (https=)

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CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

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US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
WO2013089648A1 (en) * 2011-12-16 2013-06-20 Agency For Science, Technology And Research Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
JP2013226389A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子及びその製造方法、及びそれを用いた被検体情報取得装置
CN104379268B (zh) * 2012-05-31 2017-02-22 皇家飞利浦有限公司 晶片及其制造方法
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
JP6360499B2 (ja) * 2013-01-18 2018-07-18 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 少なくとも１つの囲いを有する超伝導デバイスを製造するための方法
SG11201505616YA (en) 2013-01-18 2015-09-29 Univ Yale Superconducting device with at least one enclosure
US9533873B2 (en) 2013-02-05 2017-01-03 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
CN109954646B (zh) 2013-03-15 2021-04-27 蝴蝶网络有限公司 超声装置
WO2014151525A2 (en) 2013-03-15 2014-09-25 Butterfly Network, Inc. Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
AU2014293274B2 (en) 2013-07-23 2018-11-01 Butterfly Network, Inc. Interconnectable ultrasound transducer probes and related methods and apparatus
CA2927326C (en) 2013-10-15 2024-02-27 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
CA2930648A1 (en) 2013-11-22 2015-05-28 Sunnybrook Health Sciences Centre Ultrasonic transducer with backing having spatially segmented surface
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
CA2946133A1 (en) 2014-04-18 2015-10-22 Butterfly Network, Inc. Ultrasonic transducers in complementary metal oxide semiconductor (cmos) wafers and related apparatus and methods
CA2946120C (en) 2014-04-18 2022-10-25 Butterfly Network, Inc. Architecture of single substrate ultrasonic imaging devices, related apparatuses, and methods
EP3132281B1 (en) 2014-04-18 2019-10-30 Butterfly Network Inc. Ultrasonic imaging compression methods and apparatus
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
EP3262762B1 (en) 2015-02-27 2021-11-10 Yale University Josephson junction-based circulators and related systems and methods
US10468740B2 (en) 2015-02-27 2019-11-05 Yale University Techniques for coupling planar qubits to non-planar resonators and related systems and methods
CA2977968C (en) 2015-02-27 2023-10-17 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR20180004132A (ko) 2015-04-17 2018-01-10 예일 유니버시티 무선 조셉슨 파라메트릭 컨버터
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
WO2017123940A1 (en) 2016-01-15 2017-07-20 Yale University Techniques for manipulation of two-quantum states and related systems and methods
FR3060844B1 (fr) 2016-12-15 2018-12-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microelectronique acoustique
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (en) 2017-06-21 2024-02-14 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
EP3676025B1 (en) 2017-11-16 2024-08-14 InvenSense, Inc. Piezoelectric micromachined ultrasonic transducer with a patterned membrane structure, and a method of fabrication
WO2019118442A1 (en) 2017-12-11 2019-06-20 Yale University Superconducting nonlinear asymmetric inductive element and related systems and methods
EP3788798B1 (en) * 2018-05-03 2023-07-05 BFLY Operations, Inc. Ultrasonic transducers with pressure ports
US11223355B2 (en) 2018-12-12 2022-01-11 Yale University Inductively-shunted transmon qubit for superconducting circuits
EP3912200B1 (en) 2019-01-17 2024-05-15 Yale University Josephson nonlinear circuit
EP4176978B1 (en) * 2019-03-14 2023-11-22 Imec VZW Flexible ultrasound array
EP3909692A1 (en) * 2020-05-14 2021-11-17 Koninklijke Philips N.V. An ultrasound transducer and a tiled array of ultrasound transducers
FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
US20220409170A1 (en) * 2021-06-23 2022-12-29 Boston Scientific Scimed, Inc. Ultrasound transducer
FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

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EP0559963A2 (en) * 1992-02-13 1993-09-15 Hewlett-Packard Company Backing for acoustic transducer array
JPH08182095A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 超音波トランスジューサとその製造方法
US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US20070166520A1 (en) * 2002-05-23 2007-07-19 Schott Ag Glass material for use at high frequencies
CN101193711A (zh) * 2005-06-07 2008-06-04 皇家飞利浦电子股份有限公司 用于超声传感器组件的多器件衬块
CN101262958A (zh) * 2005-03-04 2008-09-10 国家研究院 制造微加工电容式超声传感器的表面微机械工艺

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JPH08182095A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 超音波トランスジューサとその製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

Also Published As

Publication number Publication date
DK2411163T3 (da) 2013-06-10
ES2416182T3 (es) 2013-07-30
JP2012521704A (ja) 2012-09-13
US20120074509A1 (en) 2012-03-29
EP2659987A1 (en) 2013-11-06
EP2669019A1 (en) 2013-12-04
JP5744002B2 (ja) 2015-07-01
EP2411163A2 (en) 2012-02-01
WO2010109205A2 (en) 2010-09-30
EP2662153A1 (en) 2013-11-13
WO2010109205A3 (en) 2011-03-03
EP2411163B1 (en) 2013-05-15

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