CN102427890A - 具有导电过孔的晶片键合的cmut阵列 - Google Patents

具有导电过孔的晶片键合的cmut阵列 Download PDF

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Publication number
CN102427890A
CN102427890A CN2010800225984A CN201080022598A CN102427890A CN 102427890 A CN102427890 A CN 102427890A CN 2010800225984 A CN2010800225984 A CN 2010800225984A CN 201080022598 A CN201080022598 A CN 201080022598A CN 102427890 A CN102427890 A CN 102427890A
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CN
China
Prior art keywords
layer
wafer
cmut
silicon
array
Prior art date
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Pending
Application number
CN2010800225984A
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English (en)
Chinese (zh)
Inventor
西格丽德·伯格
卡马尔·恰帕金
乔恩·杜-汉森
谢尔·阿恩·英厄布里格森
吉尔·尤里·延森
谢尔斯蒂·米德伯
埃里克·尤特讷·波普
阿恩·罗内克莱夫
戴格·索尔斯坦·望
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NTNU Technology Transfer AS
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NTNU Technology Transfer AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by NTNU Technology Transfer AS filed Critical NTNU Technology Transfer AS
Publication of CN102427890A publication Critical patent/CN102427890A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
CN2010800225984A 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列 Pending CN102427890A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256.4 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905255.6 2009-03-26
GB0909296.6 2009-05-28
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
CN102427890A true CN102427890A (zh) 2012-04-25

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800225984A Pending CN102427890A (zh) 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列

Country Status (7)

Country Link
US (1) US20120074509A1 (https=)
EP (4) EP2662153A1 (https=)
JP (1) JP5744002B2 (https=)
CN (1) CN102427890A (https=)
DK (1) DK2411163T3 (https=)
ES (1) ES2416182T3 (https=)
WO (1) WO2010109205A2 (https=)

Cited By (2)

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CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

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FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
HK1201429A1 (en) 2011-10-17 2015-09-04 Butterfly Network Inc. Transmissive imaging and related apparatus and methods
US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
WO2013089648A1 (en) * 2011-12-16 2013-06-20 Agency For Science, Technology And Research Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
JP2013226389A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子及びその製造方法、及びそれを用いた被検体情報取得装置
CN104379268B (zh) * 2012-05-31 2017-02-22 皇家飞利浦有限公司 晶片及其制造方法
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
EP2946413B1 (en) 2013-01-18 2022-01-05 Yale University Superconducting device with at least one enclosure
WO2014168665A2 (en) * 2013-01-18 2014-10-16 Yale University Methods for making a superconducting device with at least one enclosure
WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
JP6232124B2 (ja) 2013-03-15 2017-11-15 バタフライ ネットワーク，インコーポレイテッド 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法
CA2903479C (en) 2013-03-15 2023-10-10 Butterfly Network, Inc. Monolithic ultrasonic imaging devices, systems and methods
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
TWI682817B (zh) 2013-07-23 2020-01-21 美商蝴蝶網路公司 可互連的超音波換能器探頭以及相關的方法和設備
US10541659B2 (en) 2013-10-15 2020-01-21 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
CN105793674B (zh) * 2013-11-22 2019-05-28 新宁医院 包括具有空间分段表面的背衬的超声换能器
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
CA2946137C (en) 2014-04-18 2022-08-09 Butterfly Network, Inc. Ultrasonic imaging compression methods and apparatus
KR102237662B1 (ko) 2014-04-18 2021-04-09 버터플라이 네트워크, 인크. 상보적 금속 산화물 반도체(ｃｍｏｓ) 웨이퍼들 내의 초음파 트랜스듀서들 및 관련 장치 및 방법들
CN106461767B (zh) 2014-04-18 2019-05-28 蝴蝶网络有限公司 单衬底超声成像装置的架构、相关设备和方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) * 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
WO2016138408A1 (en) 2015-02-27 2016-09-01 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR102493109B1 (ko) 2015-02-27 2023-01-30 예일 유니버시티 조셉슨 접합-기반 서큘레이터 및 관련 시스템 및 방법
CN107683527A (zh) 2015-04-17 2018-02-09 耶鲁大学 无线约瑟夫逊参数转换器
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
SG11201805577XA (en) 2016-01-15 2018-07-30 Univ Yale Techniques for manipulation of two-qubit quantum states and related systems and methods
FR3060844B1 (fr) 2016-12-15 2018-12-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microelectronique acoustique
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (en) 2017-06-21 2024-02-14 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
WO2019099013A1 (en) 2017-11-16 2019-05-23 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducer with a patterned membrane structure
US11737376B2 (en) 2017-12-11 2023-08-22 Yale University Superconducting nonlinear asymmetric inductive element and related systems and methods
CN112075090B (zh) * 2018-05-03 2022-10-14 蝴蝶网络有限公司 用于cmos传感器上的超声换能器的压力端口
US11223355B2 (en) 2018-12-12 2022-01-11 Yale University Inductively-shunted transmon qubit for superconducting circuits
WO2020150348A1 (en) 2019-01-17 2020-07-23 Yale University Josephson nonlinear circuit
EP4176978B1 (en) 2019-03-14 2023-11-22 Imec VZW Flexible ultrasound array
EP3909692A1 (en) * 2020-05-14 2021-11-17 Koninklijke Philips N.V. An ultrasound transducer and a tiled array of ultrasound transducers
FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
US20220409170A1 (en) * 2021-06-23 2022-12-29 Boston Scientific Scimed, Inc. Ultrasound transducer
FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

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CN101193711A (zh) * 2005-06-07 2008-06-04 皇家飞利浦电子股份有限公司 用于超声传感器组件的多器件衬块
CN101262958A (zh) * 2005-03-04 2008-09-10 国家研究院 制造微加工电容式超声传感器的表面微机械工艺

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JPH08182095A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 超音波トランスジューサとその製造方法
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Publication number Priority date Publication date Assignee Title
CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

Also Published As

Publication number Publication date
EP2659987A1 (en) 2013-11-06
DK2411163T3 (da) 2013-06-10
EP2411163A2 (en) 2012-02-01
EP2669019A1 (en) 2013-12-04
EP2411163B1 (en) 2013-05-15
JP5744002B2 (ja) 2015-07-01
WO2010109205A2 (en) 2010-09-30
WO2010109205A3 (en) 2011-03-03
ES2416182T3 (es) 2013-07-30
EP2662153A1 (en) 2013-11-13
JP2012521704A (ja) 2012-09-13
US20120074509A1 (en) 2012-03-29

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