DK2411163T3 - Waferbundet cmut-array med ledende kontakthuller - Google Patents

Waferbundet cmut-array med ledende kontakthuller

Info

Publication number
DK2411163T3
DK2411163T3 DK10714943.7T DK10714943T DK2411163T3 DK 2411163 T3 DK2411163 T3 DK 2411163T3 DK 10714943 T DK10714943 T DK 10714943T DK 2411163 T3 DK2411163 T3 DK 2411163T3
Authority
DK
Denmark
Prior art keywords
array
contact holes
wafer bonded
leading contact
cmut
Prior art date
Application number
DK10714943.7T
Other languages
Danish (da)
English (en)
Inventor
Sigrid Berg
Kamal Chapagain
Jon Due-Hansen
Kjell Arne Ingebrigtsen
Geir Uri Jensen
Kjersti Midtboe
Erik Utne Poppe
Arne Roennekleiv
Dag Thorstein Wang
Original Assignee
Norwegian Univ Sci & Tech Ntnu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by Norwegian Univ Sci & Tech Ntnu filed Critical Norwegian Univ Sci & Tech Ntnu
Application granted granted Critical
Publication of DK2411163T3 publication Critical patent/DK2411163T3/da

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
DK10714943.7T 2009-03-26 2010-03-26 Waferbundet cmut-array med ledende kontakthuller DK2411163T3 (da)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
DK2411163T3 true DK2411163T3 (da) 2013-06-10

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
DK10714943.7T DK2411163T3 (da) 2009-03-26 2010-03-26 Waferbundet cmut-array med ledende kontakthuller

Country Status (7)

Country Link
US (1) US20120074509A1 (https=)
EP (4) EP2662153A1 (https=)
JP (1) JP5744002B2 (https=)
CN (1) CN102427890A (https=)
DK (1) DK2411163T3 (https=)
ES (1) ES2416182T3 (https=)
WO (1) WO2010109205A2 (https=)

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US10541659B2 (en) 2013-10-15 2020-01-21 Yale University Low-noise josephson junction-based directional amplifier
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KR102237662B1 (ko) 2014-04-18 2021-04-09 버터플라이 네트워크, 인크. 상보적 금속 산화물 반도체(ｃｍｏｓ) 웨이퍼들 내의 초음파 트랜스듀서들 및 관련 장치 및 방법들
CN106461767B (zh) 2014-04-18 2019-05-28 蝴蝶网络有限公司 单衬底超声成像装置的架构、相关设备和方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) * 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
WO2016138408A1 (en) 2015-02-27 2016-09-01 Yale University Techniques for producing quantum amplifiers and related systems and methods
KR102493109B1 (ko) 2015-02-27 2023-01-30 예일 유니버시티 조셉슨 접합-기반 서큘레이터 및 관련 시스템 및 방법
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Also Published As

Publication number Publication date
EP2659987A1 (en) 2013-11-06
EP2411163A2 (en) 2012-02-01
EP2669019A1 (en) 2013-12-04
EP2411163B1 (en) 2013-05-15
JP5744002B2 (ja) 2015-07-01
WO2010109205A2 (en) 2010-09-30
CN102427890A (zh) 2012-04-25
WO2010109205A3 (en) 2011-03-03
ES2416182T3 (es) 2013-07-30
EP2662153A1 (en) 2013-11-13
JP2012521704A (ja) 2012-09-13
US20120074509A1 (en) 2012-03-29

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