JP5736683B2 - 電力用半導体素子 - Google Patents

電力用半導体素子 Download PDF

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Publication number
JP5736683B2
JP5736683B2 JP2010172368A JP2010172368A JP5736683B2 JP 5736683 B2 JP5736683 B2 JP 5736683B2 JP 2010172368 A JP2010172368 A JP 2010172368A JP 2010172368 A JP2010172368 A JP 2010172368A JP 5736683 B2 JP5736683 B2 JP 5736683B2
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region
well region
conductivity type
resistance
epitaxial layer
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JP2010172368A
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Japanese (ja)
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JP2012033731A (ja
JP2012033731A5 (enrdf_load_stackoverflow
Inventor
中田　修平
修平 中田
三浦　成久
成久 三浦
景子 酒井
景子 酒井
大塚　健一
健一 大塚
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2010172368A priority Critical patent/JP5736683B2/ja
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Publication of JP2012033731A5 publication Critical patent/JP2012033731A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010172368A 2010-07-30 2010-07-30 電力用半導体素子 Active JP5736683B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010172368A JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010172368A JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

Publications (3)

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JP2012033731A JP2012033731A (ja) 2012-02-16
JP2012033731A5 JP2012033731A5 (enrdf_load_stackoverflow) 2012-11-22
JP5736683B2 true JP5736683B2 (ja) 2015-06-17

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JP2010172368A Active JP5736683B2 (ja) 2010-07-30 2010-07-30 電力用半導体素子

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JP (1) JP5736683B2 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11201239B2 (en) 2017-09-18 2021-12-14 Denso Corporation Semiconductor device including saturation current suppression layer
US11476360B2 (en) 2018-03-20 2022-10-18 Denso Corporation Semiconductor device and method for manufacturing the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6144674B2 (ja) * 2012-05-15 2017-06-07 三菱電機株式会社 半導体装置及びその製造方法
JP2016029707A (ja) 2014-07-24 2016-03-03 住友電気工業株式会社 炭化珪素半導体装置
DE112014006788B4 (de) 2014-10-29 2022-05-12 Hitachi, Ltd. Halbleiterbauelement, Leistungsmodul und Leistungswandler
JP6683083B2 (ja) * 2016-09-21 2020-04-15 株式会社デンソー 半導体装置およびその製造方法
JP2021012996A (ja) * 2019-07-09 2021-02-04 株式会社豊田中央研究所 半導体装置
JP2024048723A (ja) * 2022-09-28 2024-04-09 株式会社 日立パワーデバイス 半導体装置
CN117153886B (zh) * 2023-10-09 2024-09-27 深圳市港祥辉电子有限公司 一种石墨烯欧姆接触的金刚石平面栅vdmos器件及制备方法
CN118658886B (zh) * 2024-08-20 2024-11-01 南京第三代半导体技术创新中心有限公司 混合沟道SiC MOSFET及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002084745A2 (en) * 2001-04-11 2002-10-24 Silicon Wireless Corporation Power semiconductor devices and methods of forming same
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP2006319213A (ja) * 2005-05-13 2006-11-24 Fuji Electric Device Technology Co Ltd 半導体装置
US7928469B2 (en) * 2005-10-19 2011-04-19 Mitsubishi Electric Corporation MOSFET and method for manufacturing MOSFET
JP5646139B2 (ja) * 2008-09-26 2014-12-24 株式会社東芝 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11201239B2 (en) 2017-09-18 2021-12-14 Denso Corporation Semiconductor device including saturation current suppression layer
US11637198B2 (en) 2017-09-18 2023-04-25 Denso Corporation Manufacturing method of semiconductor device including semiconductor element of inversion type
US11476360B2 (en) 2018-03-20 2022-10-18 Denso Corporation Semiconductor device and method for manufacturing the same

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JP2012033731A (ja) 2012-02-16

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