JP5735232B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5735232B2
JP5735232B2 JP2010173507A JP2010173507A JP5735232B2 JP 5735232 B2 JP5735232 B2 JP 5735232B2 JP 2010173507 A JP2010173507 A JP 2010173507A JP 2010173507 A JP2010173507 A JP 2010173507A JP 5735232 B2 JP5735232 B2 JP 5735232B2
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Japan
Prior art keywords
plasma
plasma processing
chamber
processing apparatus
plasma generation
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JP2010173507A
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Japanese (ja)
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JP2012033803A (ja
JP2012033803A5 (enExample
Inventor
節原　裕一
裕一 節原
江部　明憲
明憲 江部
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EMD Corp
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EMD Corp
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Priority to JP2010173507A priority Critical patent/JP5735232B2/ja
Application filed by EMD Corp filed Critical EMD Corp
Priority to KR1020137005321A priority patent/KR101454132B1/ko
Priority to PCT/JP2011/067698 priority patent/WO2012018024A1/ja
Priority to US13/813,602 priority patent/US20130192759A1/en
Priority to CN201180037725.2A priority patent/CN103155103B/zh
Priority to TW100127333A priority patent/TWI515760B/zh
Priority to KR1020147022431A priority patent/KR101523893B1/ko
Priority to EP11814649.7A priority patent/EP2602813A1/en
Publication of JP2012033803A publication Critical patent/JP2012033803A/ja
Publication of JP2012033803A5 publication Critical patent/JP2012033803A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010173507A 2010-08-02 2010-08-02 プラズマ処理装置 Active JP5735232B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010173507A JP5735232B2 (ja) 2010-08-02 2010-08-02 プラズマ処理装置
PCT/JP2011/067698 WO2012018024A1 (ja) 2010-08-02 2011-08-02 プラズマ処理装置
US13/813,602 US20130192759A1 (en) 2010-08-02 2011-08-02 Plasma processing device
CN201180037725.2A CN103155103B (zh) 2010-08-02 2011-08-02 等离子体处理装置
KR1020137005321A KR101454132B1 (ko) 2010-08-02 2011-08-02 플라스마 처리장치
TW100127333A TWI515760B (zh) 2010-08-02 2011-08-02 Plasma processing device
KR1020147022431A KR101523893B1 (ko) 2010-08-02 2011-08-02 플라스마 처리장치
EP11814649.7A EP2602813A1 (en) 2010-08-02 2011-08-02 Plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010173507A JP5735232B2 (ja) 2010-08-02 2010-08-02 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2012033803A JP2012033803A (ja) 2012-02-16
JP2012033803A5 JP2012033803A5 (enExample) 2013-09-12
JP5735232B2 true JP5735232B2 (ja) 2015-06-17

Family

ID=45559521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010173507A Active JP5735232B2 (ja) 2010-08-02 2010-08-02 プラズマ処理装置

Country Status (7)

Country Link
US (1) US20130192759A1 (enExample)
EP (1) EP2602813A1 (enExample)
JP (1) JP5735232B2 (enExample)
KR (2) KR101454132B1 (enExample)
CN (1) CN103155103B (enExample)
TW (1) TWI515760B (enExample)
WO (1) WO2012018024A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793126B2 (en) * 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
WO2012032596A1 (ja) * 2010-09-06 2012-03-15 株式会社イー・エム・ディー プラズマ処理装置
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
JP2015074792A (ja) * 2013-10-07 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス プラズマｃｖｄ装置
GB2531233A (en) * 2014-02-27 2016-04-20 C Tech Innovation Ltd Plasma enhanced catalytic conversion method and apparatus
JP6431303B2 (ja) * 2014-07-03 2018-11-28 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置およびエッチング方法
JP6373707B2 (ja) * 2014-09-30 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス プラズマ処理装置
WO2017221832A1 (ja) * 2016-06-24 2017-12-28 株式会社イー・エム・ディー プラズマ源及びプラズマ処理装置
CN108987228B (zh) * 2017-06-02 2024-05-17 北京北方华创微电子装备有限公司 用于处理工件的等离子体反应装置
US12312689B2 (en) * 2019-05-01 2025-05-27 Applied Materials, Inc. Large-area high-density plasma processing chamber for flat panel displays
JP2021077451A (ja) * 2019-11-05 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP6809745B1 (ja) * 2020-08-03 2021-01-06 株式会社ニッシン プラズマ処理装置
EP4200891A1 (en) 2020-08-28 2023-06-28 Mattson Technology, Inc. Plasma strip tool with movable insert
KR102459640B1 (ko) * 2020-12-21 2022-10-27 주식회사 테스 기판처리장치
US12580153B2 (en) * 2024-01-12 2026-03-17 Tokyo Electron Limited Balanced resonator source for plasma processing
JP2025185545A (ja) * 2024-06-10 2025-12-22 東京エレクトロン株式会社 プラズマ処理装置及び上部電極

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JP3132599B2 (ja) * 1992-08-05 2001-02-05 株式会社日立製作所 マイクロ波プラズマ処理装置
JPH07142463A (ja) * 1993-11-22 1995-06-02 Nec Corp 半導体装置の製造方法と製造装置
JPH08222399A (ja) * 1994-12-14 1996-08-30 Adtec:Kk 高周波プラズマ発生装置
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
DE19841777C1 (de) * 1998-09-12 2000-01-05 Fraunhofer Ges Forschung Vorrichtung zur plasmatechnischen Abscheidung von polykristallinem Diamant
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
JP2003529926A (ja) * 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP4371543B2 (ja) * 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US20030024900A1 (en) * 2001-07-24 2003-02-06 Tokyo Electron Limited Variable aspect ratio plasma source
JP3830814B2 (ja) * 2001-12-21 2006-10-11 シャープ株式会社 プラズマプロセス装置およびプラズマ制御方法
JP2003332307A (ja) * 2002-05-08 2003-11-21 Tokyo Electron Ltd プラズマ処理装置
JP2007035411A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
JP2009123934A (ja) * 2007-11-15 2009-06-04 Tokyo Electron Ltd プラズマ処理装置
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8900403B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
KR20130072941A (ko) * 2011-12-22 2013-07-02 삼성전자주식회사 플라즈마 식각 장치

Also Published As

Publication number Publication date
TW201234407A (en) 2012-08-16
KR101523893B1 (ko) 2015-05-28
KR20140108331A (ko) 2014-09-05
US20130192759A1 (en) 2013-08-01
CN103155103A (zh) 2013-06-12
KR101454132B1 (ko) 2014-10-22
JP2012033803A (ja) 2012-02-16
KR20130062982A (ko) 2013-06-13
TWI515760B (zh) 2016-01-01
EP2602813A1 (en) 2013-06-12
CN103155103B (zh) 2016-06-08
WO2012018024A1 (ja) 2012-02-09

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