JP5732414B2 - 接合体および半導体モジュール - Google Patents

接合体および半導体モジュール Download PDF

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Publication number
JP5732414B2
JP5732414B2 JP2012013663A JP2012013663A JP5732414B2 JP 5732414 B2 JP5732414 B2 JP 5732414B2 JP 2012013663 A JP2012013663 A JP 2012013663A JP 2012013663 A JP2012013663 A JP 2012013663A JP 5732414 B2 JP5732414 B2 JP 5732414B2
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Japan
Prior art keywords
adhesive member
mass
metal
lead
free glass
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Expired - Fee Related
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JP2012013663A
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Japanese (ja)
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JP2013151396A (ja
JP2013151396A5 (https=
Inventor
沢井　裕一
裕一 沢井
内藤　孝
孝 内藤
拓也 青柳
拓也 青柳
正 藤枝
正 藤枝
森　睦宏
睦宏 森
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2012013663A priority Critical patent/JP5732414B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to PCT/JP2012/080121 priority patent/WO2013111434A1/ja
Priority to CN201280060767.2A priority patent/CN104159872A/zh
Priority to US14/374,396 priority patent/US9196563B2/en
Priority to DE112012005758.9T priority patent/DE112012005758B4/de
Priority to KR1020147018264A priority patent/KR101572774B1/ko
Priority to TW101148329A priority patent/TWI489594B/zh
Publication of JP2013151396A publication Critical patent/JP2013151396A/ja
Publication of JP2013151396A5 publication Critical patent/JP2013151396A5/ja
Application granted granted Critical
Publication of JP5732414B2 publication Critical patent/JP5732414B2/ja
Expired - Fee Related legal-status Critical Current
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    • H10W40/25—Arrangements for cooling characterised by their materials
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
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    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Die Bonding (AREA)
  • Glass Compositions (AREA)
  • Structure Of Printed Boards (AREA)
  • Ceramic Products (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2012013663A 2012-01-26 2012-01-26 接合体および半導体モジュール Expired - Fee Related JP5732414B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012013663A JP5732414B2 (ja) 2012-01-26 2012-01-26 接合体および半導体モジュール
CN201280060767.2A CN104159872A (zh) 2012-01-26 2012-11-21 接合体及半导体模块
US14/374,396 US9196563B2 (en) 2012-01-26 2012-11-21 Bonded body and semiconductor module
DE112012005758.9T DE112012005758B4 (de) 2012-01-26 2012-11-21 Gebondetes Bauelement und Halbleitermodul
PCT/JP2012/080121 WO2013111434A1 (ja) 2012-01-26 2012-11-21 接合体および半導体モジュール
KR1020147018264A KR101572774B1 (ko) 2012-01-26 2012-11-21 접합체 및 반도체 모듈
TW101148329A TWI489594B (zh) 2012-01-26 2012-12-19 And the semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012013663A JP5732414B2 (ja) 2012-01-26 2012-01-26 接合体および半導体モジュール

Publications (3)

Publication Number Publication Date
JP2013151396A JP2013151396A (ja) 2013-08-08
JP2013151396A5 JP2013151396A5 (https=) 2013-10-17
JP5732414B2 true JP5732414B2 (ja) 2015-06-10

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JP2012013663A Expired - Fee Related JP5732414B2 (ja) 2012-01-26 2012-01-26 接合体および半導体モジュール

Country Status (7)

Country Link
US (1) US9196563B2 (https=)
JP (1) JP5732414B2 (https=)
KR (1) KR101572774B1 (https=)
CN (1) CN104159872A (https=)
DE (1) DE112012005758B4 (https=)
TW (1) TWI489594B (https=)
WO (1) WO2013111434A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5726698B2 (ja) 2011-07-04 2015-06-03 株式会社日立製作所 ガラス組成物、それを含むガラスフリット、それを含むガラスペースト、およびそれを利用した電気電子部品
JP5844299B2 (ja) 2013-03-25 2016-01-13 株式会社日立製作所 接合材、接合構造体
CN105683111B (zh) * 2013-12-04 2018-09-14 株式会社日立制作所 密封结构体、及密封结构体的制造方法
US9966353B2 (en) * 2013-12-25 2018-05-08 Mitsubishi Materials Corporation Power module substrate, method of producing same, and power module
US10177069B2 (en) 2014-09-19 2019-01-08 Hitachi Ltd. Heat-dissipating structure and semiconductor module using same
EP3236495B1 (en) * 2014-12-16 2019-09-11 Kyocera Corporation Circuit substrate and electronic device
DE102015104518B3 (de) * 2015-03-25 2016-03-10 Infineon Technologies Ag Verfahren zur Herstellung einer Schaltungsträgeranordnung mit einem Träger, der eine durch ein Aluminium-Siliziumkarbid-Metallmatrixkompositmaterial gebildete Oberfläche aufweist
WO2016163377A1 (ja) * 2015-04-09 2016-10-13 ナミックス株式会社 接合体の製造方法
CN106025054A (zh) * 2016-06-29 2016-10-12 海宁市智慧光电有限公司 一种高可靠性超亮片式led光源
CN108257929B (zh) * 2016-12-29 2020-06-19 比亚迪股份有限公司 一种散热基板及其制备方法和应用以及电子元器件
CN109456076A (zh) * 2017-09-06 2019-03-12 阔斯泰公司 硅玻璃部件、其制造方法及陶瓷与硅玻璃的接合方法
CN107683016A (zh) * 2017-11-21 2018-02-09 生益电子股份有限公司 一种快速散热pcb
KR102217222B1 (ko) * 2019-01-30 2021-02-19 엘지전자 주식회사 무연계 저온 소성 글라스 프릿, 페이스트 및 이를 이용한 진공 유리 조립체
DE102023108698A1 (de) * 2023-04-05 2024-10-10 Danfoss Silicon Power Gmbh Baugruppe zur Bereitstellung elektronischer Funktionalitäten und Mittel zur Qualitätssicherung einer Fixierschicht davon

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945071A (en) 1989-04-19 1990-07-31 National Starch And Chemical Investment Holding Company Low softening point metallic oxide glasses suitable for use in electronic applications
US5188990A (en) * 1991-11-21 1993-02-23 Vlsi Packaging Materials Low temperature sealing glass compositions
JPH05175254A (ja) * 1991-12-20 1993-07-13 Nippon Electric Glass Co Ltd 低融点接着組成物
JPH08107166A (ja) * 1994-10-06 1996-04-23 Mitsubishi Materials Corp 放熱用フィン
JPH08259262A (ja) 1995-03-20 1996-10-08 Nippon Electric Glass Co Ltd 低融点封着用組成物
WO2003007370A1 (fr) * 2001-07-12 2003-01-23 Hitachi, Ltd. Substrat de cablage en verre et procede de fabrication associe, pate conductrice et module de semi-conducteurs utilises pour ce substrat de cablage en verre, ainsi que procede de formation d'un substrat de cablage et d'un conducteur
US6717276B2 (en) * 2002-09-10 2004-04-06 Texas Instruments Incorporated Two-metal layer ball grid array and chip scale package having local interconnects used in wire-bonded and flip-chip semiconductor assembly
CN101164942A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种无铅碲酸盐低熔封接玻璃
JP5414409B2 (ja) * 2009-01-16 2014-02-12 日立粉末冶金株式会社 低融点ガラス組成物、それを用いた低温封着材料及び電子部品
CN102471137B (zh) * 2009-07-31 2014-07-02 旭硝子株式会社 半导体器件用密封玻璃、密封材料、密封材料糊料以及半导体器件及其制造方法
JP2011251329A (ja) 2010-06-04 2011-12-15 Sumitomo Metal Mining Co Ltd 高温鉛フリーはんだペースト
TWI448444B (zh) 2010-08-11 2014-08-11 Hitachi Ltd A glass composition for an electrode, a paste for an electrode for use, and an electronic component to which the electrode is used
JP5726698B2 (ja) 2011-07-04 2015-06-03 株式会社日立製作所 ガラス組成物、それを含むガラスフリット、それを含むガラスペースト、およびそれを利用した電気電子部品
JP5519715B2 (ja) 2012-02-07 2014-06-11 株式会社日立製作所 接合用無鉛ガラスおよびこの接合用無鉛ガラスを用いた平板型ディスプレイ装置

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KR20140104469A (ko) 2014-08-28
DE112012005758B4 (de) 2017-05-24
US20150008573A1 (en) 2015-01-08
CN104159872A (zh) 2014-11-19
TW201347102A (zh) 2013-11-16
KR101572774B1 (ko) 2015-11-27
US9196563B2 (en) 2015-11-24
TWI489594B (zh) 2015-06-21

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