JP5723801B2 - 荷電粒子線装置および配線方法 - Google Patents

荷電粒子線装置および配線方法 Download PDF

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Publication number
JP5723801B2
JP5723801B2 JP2012022637A JP2012022637A JP5723801B2 JP 5723801 B2 JP5723801 B2 JP 5723801B2 JP 2012022637 A JP2012022637 A JP 2012022637A JP 2012022637 A JP2012022637 A JP 2012022637A JP 5723801 B2 JP5723801 B2 JP 5723801B2
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JP
Japan
Prior art keywords
sample
ionic liquid
charged particle
particle beam
wiring
Prior art date
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Active
Application number
JP2012022637A
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English (en)
Japanese (ja)
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JP2013161647A5 (enExample
JP2013161647A (ja
Inventor
陽一朗 橋本
陽一朗 橋本
英子 中澤
英子 中澤
麻美 許斐
麻美 許斐
竹内　秀一
秀一 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012022637A priority Critical patent/JP5723801B2/ja
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to PCT/JP2013/052298 priority patent/WO2013118640A1/ja
Priority to US14/376,860 priority patent/US9963776B2/en
Priority to DE112013000459.3T priority patent/DE112013000459B4/de
Priority to CN201380007984.XA priority patent/CN104094375B/zh
Publication of JP2013161647A publication Critical patent/JP2013161647A/ja
Publication of JP2013161647A5 publication Critical patent/JP2013161647A5/ja
Application granted granted Critical
Publication of JP5723801B2 publication Critical patent/JP5723801B2/ja
Priority to US15/939,689 priority patent/US10808312B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2012022637A 2012-02-06 2012-02-06 荷電粒子線装置および配線方法 Active JP5723801B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012022637A JP5723801B2 (ja) 2012-02-06 2012-02-06 荷電粒子線装置および配線方法
US14/376,860 US9963776B2 (en) 2012-02-06 2013-02-01 Charged particle device and wiring method
DE112013000459.3T DE112013000459B4 (de) 2012-02-06 2013-02-01 Verdrahtungsverfahren
CN201380007984.XA CN104094375B (zh) 2012-02-06 2013-02-01 带电粒子线装置及布线方法
PCT/JP2013/052298 WO2013118640A1 (ja) 2012-02-06 2013-02-01 荷電粒子線装置および配線方法
US15/939,689 US10808312B2 (en) 2012-02-06 2018-03-29 Charged particle device and wiring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012022637A JP5723801B2 (ja) 2012-02-06 2012-02-06 荷電粒子線装置および配線方法

Publications (3)

Publication Number Publication Date
JP2013161647A JP2013161647A (ja) 2013-08-19
JP2013161647A5 JP2013161647A5 (enExample) 2014-05-29
JP5723801B2 true JP5723801B2 (ja) 2015-05-27

Family

ID=48947404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012022637A Active JP5723801B2 (ja) 2012-02-06 2012-02-06 荷電粒子線装置および配線方法

Country Status (5)

Country Link
US (2) US9963776B2 (enExample)
JP (1) JP5723801B2 (enExample)
CN (1) CN104094375B (enExample)
DE (1) DE112013000459B4 (enExample)
WO (1) WO2013118640A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015125087A (ja) * 2013-12-27 2015-07-06 株式会社日立ハイテクノロジーズ 試料加工方法および試料加工装置
JP6134859B2 (ja) * 2014-03-12 2017-05-24 株式会社日立ハイテクノロジーズ 試料観察方法及び荷電粒子線装置
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
EP3043372B1 (en) * 2015-01-12 2017-01-04 Fei Company Method of modifying a sample surface layer from a microscopic sample
CN108015496B (zh) * 2017-12-01 2019-05-28 北京创昱科技有限公司 真空腔及真空腔的制备方法
KR102045535B1 (ko) * 2017-12-21 2019-11-15 울산과학기술원 적층 세라믹 콘덴서 표면 처리 장치 및 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205682A (ja) * 1989-02-02 1990-08-15 Mitsubishi Electric Corp 荷電ビーム式加工装置
GB2282480B (en) * 1990-07-05 1995-07-26 Olivetti Systems & Networks S Integrated circuit structure analysis
JP3190873B2 (ja) * 1998-03-02 2001-07-23 山形日本電気株式会社 収束イオンビーム装置とその制御方法
JP2002110680A (ja) 2000-10-04 2002-04-12 Nec Corp フリップチップｌｓｉの配線修正方法
US20030000921A1 (en) 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP2004000921A (ja) * 2002-04-26 2004-01-08 Seiko Epson Corp 膜体形成装置、レンズの製造方法、カラーフィルタの製造方法および有機ｅｌ装置の製造方法
JP4754273B2 (ja) 2005-06-06 2011-08-24 日立マクセル株式会社 インクジェット用導電性インク、導電性パターンおよび導電体
EP1978355B1 (en) * 2006-01-20 2016-07-27 Hitachi High-Technologies Corporation Method of observing sample using a liquid medium for preventing charge-up in an electron microscope
JP5226378B2 (ja) 2008-04-28 2013-07-03 株式会社日立ハイテクノロジーズ 透過型電子顕微鏡、及び試料観察方法
JP5030906B2 (ja) * 2008-09-11 2012-09-19 株式会社日立ハイテクノロジーズ 走査荷電粒子顕微鏡を用いたパノラマ画像合成方法およびその装置
JP5205234B2 (ja) * 2008-12-02 2013-06-05 株式会社日立ハイテクノロジーズ 微小試料採取装置，検査解析システム、および検査解析方法
JP5442417B2 (ja) * 2009-12-14 2014-03-12 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料観察方法
JP2011216426A (ja) * 2010-04-02 2011-10-27 Hitachi High-Technologies Corp 試料ホルダーおよび試料観察方法
US20110293847A1 (en) * 2010-05-28 2011-12-01 Jeffrey Todd Hastings Particle-Beam Induced Processing Using Liquid Reactants
JP5707082B2 (ja) 2010-10-08 2015-04-22 株式会社日立ハイテクノロジーズ 液体の表面を浮遊する試料の走査電子顕微鏡観察方法
JP5542749B2 (ja) 2011-06-30 2014-07-09 株式会社日立ハイテクノロジーズ 試料の作製装置，作製方法、及びそれを用いた荷電粒子線装置
JP5951223B2 (ja) 2011-11-02 2016-07-13 株式会社日立ハイテクノロジーズ 電子顕微法、電子顕微鏡および観察標体作製装置

Also Published As

Publication number Publication date
US20150299842A1 (en) 2015-10-22
CN104094375A (zh) 2014-10-08
DE112013000459T5 (de) 2014-09-11
US9963776B2 (en) 2018-05-08
CN104094375B (zh) 2016-08-24
US10808312B2 (en) 2020-10-20
DE112013000459B4 (de) 2018-08-02
US20180216223A1 (en) 2018-08-02
WO2013118640A1 (ja) 2013-08-15
JP2013161647A (ja) 2013-08-19

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