DE112013000459B4 - Verdrahtungsverfahren - Google Patents

Verdrahtungsverfahren Download PDF

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Publication number
DE112013000459B4
DE112013000459B4 DE112013000459.3T DE112013000459T DE112013000459B4 DE 112013000459 B4 DE112013000459 B4 DE 112013000459B4 DE 112013000459 T DE112013000459 T DE 112013000459T DE 112013000459 B4 DE112013000459 B4 DE 112013000459B4
Authority
DE
Germany
Prior art keywords
sample
ionic liquid
wiring
charged particle
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112013000459.3T
Other languages
German (de)
English (en)
Other versions
DE112013000459T5 (de
Inventor
c/o Hitachi High-Technologies Hashimoto Yoichiro
c/o Hitachi High-Technologies Corp Nakazawa Eiko
c/o Hitachi High-Techno. Corp. Konomi Mami
c/o Hitachi High-Technologies Takeuchi Shuichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Publication of DE112013000459T5 publication Critical patent/DE112013000459T5/de
Application granted granted Critical
Publication of DE112013000459B4 publication Critical patent/DE112013000459B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
DE112013000459.3T 2012-02-06 2013-02-01 Verdrahtungsverfahren Expired - Fee Related DE112013000459B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-022637 2012-02-06
JP2012022637A JP5723801B2 (ja) 2012-02-06 2012-02-06 荷電粒子線装置および配線方法
PCT/JP2013/052298 WO2013118640A1 (ja) 2012-02-06 2013-02-01 荷電粒子線装置および配線方法

Publications (2)

Publication Number Publication Date
DE112013000459T5 DE112013000459T5 (de) 2014-09-11
DE112013000459B4 true DE112013000459B4 (de) 2018-08-02

Family

ID=48947404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013000459.3T Expired - Fee Related DE112013000459B4 (de) 2012-02-06 2013-02-01 Verdrahtungsverfahren

Country Status (5)

Country Link
US (2) US9963776B2 (enExample)
JP (1) JP5723801B2 (enExample)
CN (1) CN104094375B (enExample)
DE (1) DE112013000459B4 (enExample)
WO (1) WO2013118640A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015125087A (ja) * 2013-12-27 2015-07-06 株式会社日立ハイテクノロジーズ 試料加工方法および試料加工装置
WO2015136635A1 (ja) * 2014-03-12 2015-09-17 株式会社日立ハイテクノロジーズ 試料観察方法及び荷電粒子線装置
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
EP3043372B1 (en) * 2015-01-12 2017-01-04 Fei Company Method of modifying a sample surface layer from a microscopic sample
CN108015496B (zh) * 2017-12-01 2019-05-28 北京创昱科技有限公司 真空腔及真空腔的制备方法
KR102045535B1 (ko) * 2017-12-21 2019-11-15 울산과학기술원 적층 세라믹 콘덴서 표면 처리 장치 및 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110680A (ja) 2000-10-04 2002-04-12 Nec Corp フリップチップｌｓｉの配線修正方法
US20030000921A1 (en) 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP2006335995A (ja) 2005-06-06 2006-12-14 Hitachi Maxell Ltd インクジェット用導電性インク、導電性パターンおよび導電体
WO2007083756A1 (ja) 2006-01-20 2007-07-26 Juridical Foundation Osaka Industrial Promotion Organization 電子顕微鏡用チャージアップ防止液状媒体、及びそれを用いた試料観察方法
JP2009266741A (ja) 2008-04-28 2009-11-12 Hitachi High-Technologies Corp 透過型電子顕微鏡、及び試料観察方法
WO2011074178A1 (ja) 2009-12-14 2011-06-23 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料観察方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205682A (ja) * 1989-02-02 1990-08-15 Mitsubishi Electric Corp 荷電ビーム式加工装置
GB2247345B (en) * 1990-07-05 1995-04-05 Haroon Ahmed Integrated circuit structure analysis
JP3190873B2 (ja) * 1998-03-02 2001-07-23 山形日本電気株式会社 収束イオンビーム装置とその制御方法
JP2004000921A (ja) * 2002-04-26 2004-01-08 Seiko Epson Corp 膜体形成装置、レンズの製造方法、カラーフィルタの製造方法および有機ｅｌ装置の製造方法
JP5030906B2 (ja) * 2008-09-11 2012-09-19 株式会社日立ハイテクノロジーズ 走査荷電粒子顕微鏡を用いたパノラマ画像合成方法およびその装置
JP5205234B2 (ja) * 2008-12-02 2013-06-05 株式会社日立ハイテクノロジーズ 微小試料採取装置，検査解析システム、および検査解析方法
JP2011216426A (ja) * 2010-04-02 2011-10-27 Hitachi High-Technologies Corp 試料ホルダーおよび試料観察方法
US20110293847A1 (en) * 2010-05-28 2011-12-01 Jeffrey Todd Hastings Particle-Beam Induced Processing Using Liquid Reactants
JP5707082B2 (ja) 2010-10-08 2015-04-22 株式会社日立ハイテクノロジーズ 液体の表面を浮遊する試料の走査電子顕微鏡観察方法
JP5542749B2 (ja) 2011-06-30 2014-07-09 株式会社日立ハイテクノロジーズ 試料の作製装置，作製方法、及びそれを用いた荷電粒子線装置
JP5951223B2 (ja) 2011-11-02 2016-07-13 株式会社日立ハイテクノロジーズ 電子顕微法、電子顕微鏡および観察標体作製装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110680A (ja) 2000-10-04 2002-04-12 Nec Corp フリップチップｌｓｉの配線修正方法
US20030000921A1 (en) 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP2006335995A (ja) 2005-06-06 2006-12-14 Hitachi Maxell Ltd インクジェット用導電性インク、導電性パターンおよび導電体
WO2007083756A1 (ja) 2006-01-20 2007-07-26 Juridical Foundation Osaka Industrial Promotion Organization 電子顕微鏡用チャージアップ防止液状媒体、及びそれを用いた試料観察方法
US20090173882A1 (en) * 2006-01-20 2009-07-09 Susumu Kuwabata Liquid Medium For Preventing Charge-Up in Electron Microscope and Method of Observing Sample Using The Same
US7880144B2 (en) 2006-01-20 2011-02-01 Juridical Foundation Osaka Industrial Promotion Organization c/o Mydome Osaka Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same
JP2009266741A (ja) 2008-04-28 2009-11-12 Hitachi High-Technologies Corp 透過型電子顕微鏡、及び試料観察方法
US20110057100A1 (en) 2008-04-28 2011-03-10 Hitachi High-Technologies Corporation Transmission Electron Microscope, and Method of Observing Specimen
WO2011074178A1 (ja) 2009-12-14 2011-06-23 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料観察方法
US20120292507A1 (en) * 2009-12-14 2012-11-22 Hitachi High- Technologies Corporation Charged Particle Beam Device and Sample Observation Method

Also Published As

Publication number Publication date
US9963776B2 (en) 2018-05-08
CN104094375B (zh) 2016-08-24
JP2013161647A (ja) 2013-08-19
WO2013118640A1 (ja) 2013-08-15
US10808312B2 (en) 2020-10-20
JP5723801B2 (ja) 2015-05-27
US20180216223A1 (en) 2018-08-02
CN104094375A (zh) 2014-10-08
DE112013000459T5 (de) 2014-09-11
US20150299842A1 (en) 2015-10-22

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R082 Change of representative

Representative=s name: PATENTANWAELTE STREHL, SCHUEBEL-HOPF & PARTNER, DE

Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE

R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: HITACHI HIGH-TECH CORPORATION, JP

Free format text: FORMER OWNER: HITACHI HIGH-TECHNOLOGIES CORPORATION, TOKYO, JP

R082 Change of representative

Representative=s name: STREHL SCHUEBEL-HOPF & PARTNER MBB PATENTANWAE, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee