JP5721813B2 - セラミックターゲットによって火花蒸着をする方法 - Google Patents

セラミックターゲットによって火花蒸着をする方法 Download PDF

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Publication number
JP5721813B2
JP5721813B2 JP2013508382A JP2013508382A JP5721813B2 JP 5721813 B2 JP5721813 B2 JP 5721813B2 JP 2013508382 A JP2013508382 A JP 2013508382A JP 2013508382 A JP2013508382 A JP 2013508382A JP 5721813 B2 JP5721813 B2 JP 5721813B2
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JP
Japan
Prior art keywords
arc
evaporation source
target plate
arc evaporation
target
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Expired - Fee Related
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JP2013508382A
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English (en)
Japanese (ja)
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JP2013525611A (ja
JP2013525611A5 (https=
Inventor
レヒトハーラー，マルクス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Surface Solutions AG Pfaeffikon
Oerlikon Trading AG Truebbach
Oerlikon Surface Solutions AG Truebbach
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Publication of JP2013525611A5 publication Critical patent/JP2013525611A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2013508382A 2010-05-04 2011-04-13 セラミックターゲットによって火花蒸着をする方法 Expired - Fee Related JP5721813B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33093510P 2010-05-04 2010-05-04
US61/330,935 2010-05-04
PCT/EP2011/001856 WO2011137967A1 (de) 2010-05-04 2011-04-13 Verfahren zum funkenverdampfen mit keramischen targets

Publications (3)

Publication Number Publication Date
JP2013525611A JP2013525611A (ja) 2013-06-20
JP2013525611A5 JP2013525611A5 (https=) 2014-03-20
JP5721813B2 true JP5721813B2 (ja) 2015-05-20

Family

ID=44121711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013508382A Expired - Fee Related JP5721813B2 (ja) 2010-05-04 2011-04-13 セラミックターゲットによって火花蒸着をする方法

Country Status (7)

Country Link
US (1) US20130220800A1 (https=)
EP (1) EP2566999B1 (https=)
JP (1) JP5721813B2 (https=)
KR (1) KR101814228B1 (https=)
CN (2) CN102859027A (https=)
CA (1) CA2798210C (https=)
WO (1) WO2011137967A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2020004821A (es) * 2017-10-03 2020-08-13 Oerlikon Surface Solutions Ag Pfaeffikon Fuente de arco con campo magnetico confinado.
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets
EP3556901B1 (en) * 2018-04-20 2021-03-31 Plansee Composite Materials Gmbh Vacuum arc source

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
JPS6442575A (en) * 1987-08-10 1989-02-14 Kobe Steel Ltd Ceramic target having high melting point for vacuum deposition with arc
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
JPH01263265A (ja) * 1988-04-13 1989-10-19 Kobe Steel Ltd 真空アーク蒸着法
JPH02213463A (ja) * 1989-02-13 1990-08-24 Nippon Sheet Glass Co Ltd 透明導電膜の製造方法
US5271817A (en) * 1992-03-19 1993-12-21 Vlsi Technology, Inc. Design for sputter targets to reduce defects in refractory metal films
DE4301516C2 (de) * 1993-01-21 2003-02-13 Applied Films Gmbh & Co Kg Targetkühlung mit Wanne
DE4329155A1 (de) * 1993-08-30 1995-03-02 Bloesch W Ag Magnetfeldkathode
JP3315302B2 (ja) * 1995-12-18 2002-08-19 株式会社神戸製鋼所 真空アーク蒸着方法
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JP2002525431A (ja) * 1998-09-14 2002-08-13 ユナキス・トレーディング・アクチェンゲゼルシャフト アーク蒸化室用ターゲット配置
JP3917348B2 (ja) * 1999-05-26 2007-05-23 株式会社神戸製鋼所 アーク蒸発源、真空蒸着装置及び真空蒸着方法
US6495002B1 (en) * 2000-04-07 2002-12-17 Hy-Tech Research Corporation Method and apparatus for depositing ceramic films by vacuum arc deposition
US6787010B2 (en) * 2000-11-30 2004-09-07 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
ATE528421T1 (de) * 2000-11-30 2011-10-15 Univ North Carolina State Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
US20020139662A1 (en) * 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
CH696828A5 (de) * 2003-11-18 2007-12-14 Oerlikon Trading Ag Zündvorrichtung.
CN100419117C (zh) * 2004-02-02 2008-09-17 株式会社神户制钢所 硬质叠层被膜、其制造方法及成膜装置
JP4889957B2 (ja) * 2005-03-25 2012-03-07 株式会社フェローテック プラズマ生成装置におけるドロップレット除去装置及びドロップレット除去方法
EP2466614A3 (de) * 2006-05-16 2013-05-22 Oerlikon Trading AG, Trübbach Arcquelle und Magnetanordnung
PL2720248T3 (pl) * 2007-04-17 2018-01-31 Oerlikon Surface Solutions Ag Pfaeffikon Źródło próżniowego odparowania łukowego, a także komora odparowania łukowego ze źródłem próżniowego odparowania łukowego
SE531749C2 (sv) * 2007-09-17 2009-07-28 Seco Tools Ab Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel
JP5344864B2 (ja) * 2008-07-31 2013-11-20 富士フイルム株式会社 成膜装置および成膜方法
AT12021U1 (de) * 2010-04-14 2011-09-15 Plansee Se Beschichtungsquelle und verfahren zu deren herstellung

Also Published As

Publication number Publication date
JP2013525611A (ja) 2013-06-20
US20130220800A1 (en) 2013-08-29
CN106435488A (zh) 2017-02-22
CA2798210C (en) 2018-08-21
CA2798210A1 (en) 2011-11-10
EP2566999B1 (de) 2018-12-12
EP2566999A1 (de) 2013-03-13
WO2011137967A1 (de) 2011-11-10
KR101814228B1 (ko) 2018-01-04
KR20130097644A (ko) 2013-09-03
CN102859027A (zh) 2013-01-02

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